HYBRID BACKSIDE THERMAL STRUCTURES FOR ENHANCED IC PACKAGES

    公开(公告)号:US20210249375A1

    公开(公告)日:2021-08-12

    申请号:US16785014

    申请日:2020-02-07

    Abstract: An integrated circuit (IC) die structure comprises a substrate material comprising silicon. Integrated circuitry is over a first side of the substrate material. A composite layer is in direct contact with a second side of the substrate material. The second side is opposite the first side. The composite layer comprises a first constituent material associated with a first linear coefficient of thermal expansion (CTE), and a first thermal conductivity exceeding that of the substrate. The composite layer also comprises a second constituent material associated with a second CTE that is lower than the first, and a second thermal conductivity exceeding that of the substrate.

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