HYBRID BACKSIDE THERMAL STRUCTURES FOR ENHANCED IC PACKAGES

    公开(公告)号:US20210249375A1

    公开(公告)日:2021-08-12

    申请号:US16785014

    申请日:2020-02-07

    Abstract: An integrated circuit (IC) die structure comprises a substrate material comprising silicon. Integrated circuitry is over a first side of the substrate material. A composite layer is in direct contact with a second side of the substrate material. The second side is opposite the first side. The composite layer comprises a first constituent material associated with a first linear coefficient of thermal expansion (CTE), and a first thermal conductivity exceeding that of the substrate. The composite layer also comprises a second constituent material associated with a second CTE that is lower than the first, and a second thermal conductivity exceeding that of the substrate.

    CHASSIS CUSTOMIZATION WITH HIGH THROUGHPUT ADDITIVE MANUFACTURED MODIFICATION STRUCTURES

    公开(公告)号:US20230317556A1

    公开(公告)日:2023-10-05

    申请号:US17710658

    申请日:2022-03-31

    CPC classification number: H01L23/467

    Abstract: A modification structure may be formed within a chassis of an electronic product to improve its thermal dissipation systems, to lessen its weight, and/or to enhance its durability, while maintaining the industrial design/esthetics/ergonomics thereof, wherein the modification structure may comprise a plurality of fused modification material particles. The modification structures may have a higher thermal conductivity than the chassis, may have a lower thermal conductivity than the chassis, may have a lower density than the chassis, and/or may have a higher yield strength than the chassis. In a specific example, the modification structure may extend entirely through the chassis and be sufficiently porous to allow air flow to assist in heat dissipation from the electronic product.

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