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    Techniques for forming a compacted array of functional cells
    1.
    发明授权
    Techniques for forming a compacted array of functional cells 有权

    公开(公告)号：US10217732B2

    公开(公告)日：2019-02-26

    申请号：US15124817

    申请日：2014-06-25

    Applicant: INTEL CORPORATION

    Inventor： Rany T. Elsayed ,  Niti Goel ,  Silvio E. Bou-Ghazale ,  Randy J. Aksamit

    IPC: H01L21/027 ,  G06F17/50 ,  H01L27/02 ,  H01L27/11 ,  H01L27/118 ,  H03K19/00 ,  H01L21/8234 ,  H01L29/16

    Abstract: Techniques are disclosed for forming a compacted array of functional cells using next-generation lithography (NGL) processes, such as electron-beam direct write (EBDW) and extreme ultraviolet lithography (EUVL), to form the boundaries of the cells in the array. The compacted array of cells may be used for field-programmable gate array (FPGA) structures configured with logic cells, static random-access memory (SRAM) structures configured with bit cells, or other memory or logic devices having cell-based structures. The techniques can be used to gain a reduction in area of 10 to 50 percent, for example, for the array of functional cells, because the NGL processes allow for higher precision and closer cuts for the cell boundaries, as compared to conventional 193 nm photolithography. In addition, the use of NGL processes to form the boundaries for the cells may also reduce lithography induced variations that would otherwise be present with conventional 193 nm photolithography.

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