公开(公告)号：US08722508B2

公开(公告)日：2014-05-13

申请号：US13832929

申请日：2013-03-15

Applicant: International Business Machines Corporation

Inventor： Alan B. Botula ,  Dinh Dang ,  James S. Dunn ,  Alvin J. Joseph ,  Peter J. Lindgren

IPC: H01L21/764

CPC classification number: H01L21/76283 ,  H01L21/76289 ,  H01L27/0738 ,  H01L27/1203 ,  H01L29/0649

Abstract: A low harmonic radio-frequency (RF) switch in a silicon-on-insulator (SOI) substrate and methods of manufacture. A method includes forming at least one trench through an insulator layer. The at least one trench is adjacent a device formed in an active region on the insulator layer. The method also includes forming at least one cavity in a substrate under the insulator layer and extending laterally from the at least one trench to underneath the device.

Abstract translation: 绝缘体上硅（SOI）衬底中的低谐波射频（RF）开关及其制造方法。 一种方法包括通过绝缘体层形成至少一个沟槽。 所述至少一个沟槽与形成在所述绝缘体层上的有源区域中的器件相邻。 该方法还包括在绝缘体层之下的衬底中形成至少一个空腔，并从该至少一个沟槽横向延伸到该器件的下方。

公开(公告)号：US09564508B2

公开(公告)日：2017-02-07

申请号：US14528435

申请日：2014-10-30

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Mattias E. Dahlstrom ,  Dinh Dang ,  Qizhi Liu ,  Ramana M. Malladi

IPC: H01L29/66 ,  H01L21/762 ,  H01L21/763 ,  H01L23/367 ,  H01L29/08 ,  H01L29/737 ,  H01L21/306 ,  H01L21/308 ,  H01L23/373

CPC classification number: H01L29/66242 ,  H01L21/30604 ,  H01L21/308 ,  H01L21/76224 ,  H01L21/763 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/373 ,  H01L29/0821 ,  H01L29/7371 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of making a semiconductor structure includes forming a trench through a shallow trench isolation (STI) structure and into a substrate, and forming a liner including an electrical insulator material on sidewalls of the trench. The method also includes forming a core including a high thermal conductivity material in the trench and on the liner, and forming a cap in the trench and on the core.

Abstract translation: 制造半导体结构的方法包括通过浅沟槽隔离（STI）结构形成沟槽并且形成衬底，以及在沟槽的侧壁上形成包括电绝缘体材料的衬垫。 该方法还包括在沟槽和衬垫上形成包括高导热性材料的芯，并在沟槽和芯上形成帽。

公开(公告)号：US20140354392A1

公开(公告)日：2014-12-04

申请号：US13909464

申请日：2013-06-04

Applicant: International Business Machines Corporation

Inventor： Edward C. Cooney, III ,  Dinh Dang ,  David A. DeMuynck ,  Sarah A. McTaggart ,  Gary L. Milo ,  Melissa J. Roma ,  Jeffrey L. Thompson ,  Thomas W. Weeks

IPC: H01L49/02

CPC classification number: H01L28/10 ,  H01L23/5227 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method including forming a first metal wire in a first dielectric layer, the first metal wire including a first vertical side opposite from a second vertical side; and forming a second metal wire in a second dielectric layer above the first dielectric layer, the second metal wire including a third vertical side opposite from a fourth vertical side, where the first vertical side is laterally offset from the third vertical side by a first predetermined distance, and the second vertical side is laterally offset from the fourth vertical side by a second predetermined distance, where the first metal wire and the second metal wire are in direct contact with one another.

Abstract translation: 一种包括在第一电介质层中形成第一金属线的方法，所述第一金属线包括与第二垂直侧相对的第一垂直侧; 以及在所述第一电介质层上方的第二电介质层中形成第二金属线，所述第二金属线包括与第四垂直侧相反的第三垂直侧，其中所述第一垂直侧从所述第三垂直侧横向偏移第一预定 距离，第二垂直侧与第四垂直侧横向偏移第二预定距离，其中第一金属线和第二金属线彼此直接接触。