公开(公告)号：US20240290730A1

公开(公告)日：2024-08-29

申请号：US18175985

申请日：2023-02-28

申请人： International Business Machines Corporation

发明人： Sathyanarayanan Raghavan ,  Mukta Ghate Farooq ,  Prabudhya Roy Chowdhury

IPC分类号： H01L23/00 ,  H01L21/304 ,  H01L23/053 ,  H01L25/065

CPC分类号： H01L23/562 ,  H01L21/3043 ,  H01L23/053 ,  H01L25/0657

摘要： A semiconductor structure for tailoring a die stiffness. The semiconductor structure may include a packaging substrate, a lid, and a first semiconductor die between the packaging substrate and the lid. The first semiconductor die may have a frontside attached to the packaging substrate that has semiconductor devices. The first semiconductor die may also have a backside, opposite the frontside, that has grooves less than a thickness of the first semiconductor die.

公开(公告)号：US20240113055A1

公开(公告)日：2024-04-04

申请号：US17937429

申请日：2022-09-30

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Nicholas Alexander Polomoff ,  Eric Perfecto ,  Katsuyuki Sakuma ,  Mukta Ghate Farooq ,  Spyridon Skordas ,  Sathyanarayanan Raghavan ,  Michael P. Belyansky

IPC分类号： H01L23/00 ,  H01L25/065

CPC分类号： H01L24/08 ,  H01L24/03 ,  H01L24/80 ,  H01L25/0657 ,  H01L2224/02125 ,  H01L2224/02145 ,  H01L2224/0215 ,  H01L2224/03019 ,  H01L2224/0361 ,  H01L2224/03622 ,  H01L2224/08145 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2225/06524 ,  H01L2225/06527 ,  H01L2225/06593 ,  H01L2924/3512

摘要： A hybrid bonded semiconductor structure includes a first substrate and a second substrate each having an interface joined in a hybrid bond. Each substrate has a die portion and a crackstop structure adjacent the die portion. One or more voids in the first substrate and the second substrate are formed in or about a portion of a periphery of each crackstop structure. At least some of the one or more voids in the first substrate and the second substrate are substantially aligned to form a unified void with airgaps across the hybrid bond interface.