PROCESSING FOR OVERCOMING EXTREME TOPOGRAPHY
    2.
    发明申请
    PROCESSING FOR OVERCOMING EXTREME TOPOGRAPHY 有权
    处理极端地形图

    公开(公告)号:US20140141618A1

    公开(公告)日:2014-05-22

    申请号:US14097956

    申请日:2013-12-05

    Abstract: A process for overcoming extreme topographies by first planarizing a cavity in a semiconductor substrate in order to create a planar surface for subsequent lithography processing. As a result of the planarizing process for extreme topographies, subsequent lithography processing is enabled including the deposition of features in close proximity to extreme topographic surfaces (e.g., deep cavities or channels) and, including the deposition of features within a cavity. In a first embodiment, the process for planarizing a cavity in a semiconductor substrate includes the application of dry film resists having high chemical resistance. In a second embodiment, the process for planarizing a cavity includes the filling of cavity using materials such as polymers, spin on glasses, and metallurgy.

    Abstract translation: 通过首先平面化半导体衬底中的空腔以便创建用于后续光刻处理的平坦表面来克服极端形貌的过程。 作为极端形貌的平面化处理的结果,可以进行随后的光刻处理,包括紧邻极端地形表面(例如,深空腔或通道)的特征沉积,并且包括在空腔内沉积特征。 在第一实施例中,用于平面化半导体衬底中的腔的方法包括施加具有高耐化学性的干膜抗蚀剂。 在第二实施例中,用于平坦化空腔的方法包括使用诸如聚合物,玻璃旋转和冶金的材料来填充空腔。

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