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公开(公告)号：US20180323110A1
公开(公告)日：2018-11-08
申请号：US16038426
申请日：2018-07-18
IPC分类号： H01L21/8234 , H01L29/66 , H01L21/768 , H01L21/311 , H01L21/02 , H01L27/088 , H01L29/417 , H01L21/3213
CPC分类号： H01L21/823475 , H01L21/02167 , H01L21/0217 , H01L21/02274 , H01L21/31111 , H01L21/32139 , H01L21/76802 , H01L21/76837 , H01L21/823418 , H01L21/823425 , H01L21/823431 , H01L21/823437 , H01L27/088 , H01L29/41783 , H01L29/6653 , H01L29/66545 , H01L29/66553 , H01L29/6656 , H01L29/66636 , H01L29/66795
摘要： A method for filling gaps between structures includes forming a plurality of high aspect ratio structures adjacent to one another with gaps, forming a first dielectric layer on tops of the structures and conformally depositing a spacer dielectric layer over the structures. The spacer dielectric layer is removed from horizontal surfaces and a protection layer is conformally deposited over the structures. The gaps are filled with a flowable dielectric, which is recessed to a height along sidewalls of the structures by a selective etch process such that the protection layer protects the spacer dielectric layer on sidewalls of the structures. The first dielectric layer and the spacer dielectric layer are exposed above the height using a higher etch resistance than the protection layer to maintain dimensions of the spacer layer dielectric through the etching processes. The gaps are filled by a high density plasma fill.
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公开(公告)号：US09929057B2
公开(公告)日：2018-03-27
申请号：US15342801
申请日：2016-11-03
IPC分类号： H01L21/8234 , H01L21/768 , H01L27/088 , H01L29/66 , H01L21/02 , H01L21/311
CPC分类号： H01L21/823475 , H01L21/02167 , H01L21/0217 , H01L21/02274 , H01L21/31111 , H01L21/32139 , H01L21/76802 , H01L21/76837 , H01L21/823418 , H01L21/823425 , H01L21/823431 , H01L21/823437 , H01L27/088 , H01L29/41783 , H01L29/6653 , H01L29/66545 , H01L29/66553 , H01L29/6656 , H01L29/66636 , H01L29/66795
摘要： A method for filling gaps between structures includes forming a plurality of high aspect ratio structures adjacent to one another with gaps, forming a first dielectric layer on tops of the structures and conformally depositing a spacer dielectric layer over the structures. The spacer dielectric layer is removed from horizontal surfaces and a protection layer is conformally deposited over the structures. The gaps are filled with a flowable dielectric, which is recessed to a height along sidewalls of the structures by a selective etch process such that the protection layer protects the spacer dielectric layer on sidewalls of the structures. The first dielectric layer and the spacer dielectric layer are exposed above the height using a higher etch resistance than the protection layer to maintain dimensions of the spacer layer dielectric through the etching processes. The gaps are filled by a high density plasma fill.
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公开(公告)号：US20170148668A1
公开(公告)日：2017-05-25
申请号：US15426573
申请日：2017-02-07
IPC分类号： H01L21/768 , H01L29/66 , H01L21/8234 , H01L27/088 , H01L21/02 , H01L21/311
CPC分类号： H01L21/823475 , H01L21/02167 , H01L21/0217 , H01L21/02274 , H01L21/31111 , H01L21/32139 , H01L21/76802 , H01L21/76837 , H01L21/823418 , H01L21/823425 , H01L21/823431 , H01L21/823437 , H01L27/088 , H01L29/41783 , H01L29/6653 , H01L29/66545 , H01L29/66553 , H01L29/6656 , H01L29/66636 , H01L29/66795
摘要： A method for filling gaps between structures includes forming a plurality of high aspect ratio structures adjacent to one another with gaps, forming a first dielectric layer on tops of the structures and conformally depositing a spacer dielectric layer over the structures. The spacer dielectric layer is removed from horizontal surfaces and a protection layer is conformally deposited over the structures. The gaps are filled with a flowable dielectric, which is recessed to a height along sidewalls of the structures by a selective etch process such that the protection layer protects the spacer dielectric layer on sidewalls of the structures. The first dielectric layer and the spacer dielectric layer are exposed above the height using a higher etch resistance than the protection layer to maintain dimensions of the spacer layer dielectric through the etching processes. The gaps are filled by a high density plasma fill.
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公开(公告)号：US20170287776A1
公开(公告)日：2017-10-05
申请号：US15625360
申请日：2017-06-16
IPC分类号： H01L29/66 , H01L21/311 , H01L27/088 , H01L21/768 , H01L21/8234 , H01L21/02
CPC分类号： H01L21/823475 , H01L21/02167 , H01L21/0217 , H01L21/02274 , H01L21/31111 , H01L21/32139 , H01L21/76802 , H01L21/76837 , H01L21/823418 , H01L21/823425 , H01L21/823431 , H01L21/823437 , H01L27/088 , H01L29/41783 , H01L29/6653 , H01L29/66545 , H01L29/66553 , H01L29/6656 , H01L29/66636 , H01L29/66795
摘要： A method for filling gaps between structures includes forming a plurality of high aspect ratio structures adjacent to one another with gaps, forming a first dielectric layer on tops of the structures and conformally depositing a spacer dielectric layer over the structures. The spacer dielectric layer is removed from horizontal surfaces and a protection layer is conformally deposited over the structures. The gaps are filled with a flowable dielectric, which is recessed to a height along sidewalls of the structures by a selective etch process such that the protection layer protects the spacer dielectric layer on sidewalls of the structures. The first dielectric layer and the spacer dielectric layer are exposed above the height using a higher etch resistance than the protection layer to maintain dimensions of the spacer layer dielectric through the etching processes. The gaps are filled by a high density plasma fill.
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公开(公告)号：US20170076987A1
公开(公告)日：2017-03-16
申请号：US15342801
申请日：2016-11-03
IPC分类号： H01L21/8234 , H01L29/66 , H01L21/02 , H01L21/768
CPC分类号： H01L21/823475 , H01L21/02167 , H01L21/0217 , H01L21/02274 , H01L21/31111 , H01L21/32139 , H01L21/76802 , H01L21/76837 , H01L21/823418 , H01L21/823425 , H01L21/823431 , H01L21/823437 , H01L27/088 , H01L29/41783 , H01L29/6653 , H01L29/66545 , H01L29/66553 , H01L29/6656 , H01L29/66636 , H01L29/66795
摘要： A method for filling gaps between structures includes forming a plurality of high aspect ratio structures adjacent to one another with gaps, forming a first dielectric layer on tops of the structures and conformally depositing a spacer dielectric layer over the structures. The spacer dielectric layer is removed from horizontal surfaces and a protection layer is conformally deposited over the structures. The gaps are filled with a flowable dielectric, which is recessed to a height along sidewalls of the structures by a selective etch process such that the protection layer protects the spacer dielectric layer on sidewalls of the structures. The first dielectric layer and the spacer dielectric layer are exposed above the height using a higher etch resistance than the protection layer to maintain dimensions of the spacer layer dielectric through the etching processes. The gaps are filled by a high density plasma fill.
摘要翻译： 用于填充结构之间的间隙的方法包括通过间隙形成彼此相邻的多个高纵横比结构，在结构的顶部上形成第一介电层，并在结构上共形沉积间隔电介质层。 间隔电介质层从水平表面去除，保护层共形沉积在结构上。 间隙填充有可流动电介质，其通过选择性蚀刻工艺凹陷到结构侧壁的高度，使得保护层保护结构侧壁上的间隔电介质层。 使用比保护层更高的蚀刻电阻将第一介电层和间隔电介质层暴露在高度之上，以通过蚀刻工艺保持间隔层电介质的尺寸。 间隙由高密度等离子体填充物填充。
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公开(公告)号：US20160379873A1
公开(公告)日：2016-12-29
申请号：US14750741
申请日：2015-06-25
IPC分类号： H01L21/768 , H01L21/311 , H01L29/66 , H01L21/02 , H01L27/088 , H01L21/8234
CPC分类号： H01L21/823475 , H01L21/02167 , H01L21/0217 , H01L21/02274 , H01L21/31111 , H01L21/32139 , H01L21/76802 , H01L21/76837 , H01L21/823418 , H01L21/823425 , H01L21/823431 , H01L21/823437 , H01L27/088 , H01L29/41783 , H01L29/6653 , H01L29/66545 , H01L29/66553 , H01L29/6656 , H01L29/66636 , H01L29/66795
摘要： A method for filling gaps between structures includes forming a plurality of high aspect ratio structures adjacent to one another with gaps, forming a first dielectric layer on tops of the structures and conformally depositing a spacer dielectric layer over the structures. The spacer dielectric layer is removed from horizontal surfaces and a protection layer is conformally deposited over the structures. The gaps are filled with a flowable dielectric, which is recessed to a height along sidewalls of the structures by a selective etch process such that the protection layer protects the spacer dielectric layer on sidewalls of the structures. The first dielectric layer and the spacer dielectric layer are exposed above the height using a higher etch resistance than the protection layer to maintain dimensions of the spacer layer dielectric through the etching processes. The gaps are filled by a high density plasma fill.
摘要翻译： 用于填充结构之间的间隙的方法包括通过间隙形成彼此相邻的多个高纵横比结构，在结构的顶部上形成第一介电层，并在结构上共形沉积间隔电介质层。 间隔电介质层从水平表面去除，保护层共形沉积在结构上。 间隙填充有可流动电介质，其通过选择性蚀刻工艺凹陷到结构侧壁的高度，使得保护层保护结构侧壁上的间隔电介质层。 使用比保护层更高的蚀刻电阻将第一介电层和间隔电介质层暴露在高度之上，以通过蚀刻工艺保持间隔层电介质的尺寸。 间隙由高密度等离子体填充物填充。
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公开(公告)号：US10297506B2
公开(公告)日：2019-05-21
申请号：US16038426
申请日：2018-07-18
IPC分类号： H01L21/8234 , H01L21/768 , H01L27/088 , H01L29/66 , H01L21/02 , H01L21/311 , H01L21/3213 , H01L29/417
摘要： A method for filling gaps between structures includes forming a plurality of high aspect ratio structures adjacent to one another with gaps, forming a first dielectric layer on tops of the structures and conformally depositing a spacer dielectric layer over the structures. The spacer dielectric layer is removed from horizontal surfaces and a protection layer is conformally deposited over the structures. The gaps are filled with a flowable dielectric, which is recessed to a height along sidewalls of the structures by a selective etch process such that the protection layer protects the spacer dielectric layer on sidewalls of the structures. The first dielectric layer and the spacer dielectric layer are exposed above the height using a higher etch resistance than the protection layer to maintain dimensions of the spacer layer dielectric through the etching processes. The gaps are filled by a high density plasma fill.
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8.发明申请Dipole-Based Contact Structure to Reduce Metal-Semiconductor Contact Resistance in MOSFETs 有权偶极子接触结构降低MOSFET中的金属 - 半导体接触电阻公开(公告)号：US20170018463A1
公开(公告)日：2017-01-19
申请号：US14800970
申请日：2015-07-16
申请人： International Business Machines Corporation , GlobalFoundries, Inc. , The Research Foundation for The State University of New York
发明人： Huiming Bu , Hui-feng Li , Vijay Narayanan , Hiroaki Niimi , Tenko Yamashita
IPC分类号： H01L21/8238 , H01L23/535 , H01L27/092
CPC分类号： H01L21/76832 , H01L21/285 , H01L21/76805 , H01L21/76831 , H01L21/76843 , H01L21/76895 , H01L21/76897 , H01L21/823821 , H01L21/823871 , H01L23/485 , H01L23/5283 , H01L23/53223 , H01L23/53238 , H01L23/53266 , H01L23/5329 , H01L23/535 , H01L27/092 , H01L27/0924 , H01L29/0895 , H01L29/66795 , H01L29/7851
摘要： A transistor device includes a substrate; a source region and a drain region formed over the substrate; and a source/drain contact formed in contact with at least one of the source region and the drain region, the source/drain contact including a conductive metal and a bilayer disposed between the conductive metal and the at least one of the source and drain region, the bilayer including a metal oxide layer in contact with the conductive metal, and a silicon dioxide layer in contact with the at least one of the source and drain region.
摘要翻译： 晶体管器件包括衬底; 形成在所述基板上的源极区域和漏极区域; 以及与所述源极区域和所述漏极区域中的至少一个接触形成的源极/漏极接触部，所述源极/漏极接触部包括导电金属和设置在所述导电金属与所述源极和漏极区域中的至少一个之间的双层 包括与导电金属接触的金属氧化物层的双层以及与源区和漏区中的至少一个接触的二氧化硅层。
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公开(公告)号：US20160380078A1
公开(公告)日：2016-12-29
申请号：US15092272
申请日：2016-04-06
IPC分类号： H01L29/66 , H01L27/088
CPC分类号： H01L21/823475 , H01L21/02167 , H01L21/0217 , H01L21/02274 , H01L21/31111 , H01L21/32139 , H01L21/76802 , H01L21/76837 , H01L21/823418 , H01L21/823425 , H01L21/823431 , H01L21/823437 , H01L27/088 , H01L29/41783 , H01L29/6653 , H01L29/66545 , H01L29/66553 , H01L29/6656 , H01L29/66636 , H01L29/66795
摘要： A method for filling gaps between structures includes forming a plurality of high aspect ratio structures adjacent to one another with gaps, forming a first dielectric layer on tops of the structures and conformally depositing a spacer dielectric layer over the structures. The spacer dielectric layer is removed from horizontal surfaces and a protection layer is conformally deposited over the structures. The gaps are filled with a flowable dielectric, which is recessed to a height along sidewalls of the structures by a selective etch process such that the protection layer protects the spacer dielectric layer on sidewalls of the structures. The first dielectric layer and the spacer dielectric layer are exposed above the height using a higher etch resistance than the protection layer to maintain dimensions of the spacer layer dielectric through the etching processes. The gaps are filled by a high density plasma fill.
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公开(公告)号：US10083861B2
公开(公告)日：2018-09-25
申请号：US15625360
申请日：2017-06-16
IPC分类号： H01L21/768 , H01L29/66 , H01L21/8234 , H01L21/02 , H01L27/088 , H01L21/311
CPC分类号： H01L21/823475 , H01L21/02167 , H01L21/0217 , H01L21/02274 , H01L21/31111 , H01L21/32139 , H01L21/76802 , H01L21/76837 , H01L21/823418 , H01L21/823425 , H01L21/823431 , H01L21/823437 , H01L27/088 , H01L29/41783 , H01L29/6653 , H01L29/66545 , H01L29/66553 , H01L29/6656 , H01L29/66636 , H01L29/66795
摘要： A method for filling gaps between structures includes forming a plurality of high aspect ratio structures adjacent to one another with gaps, forming a first dielectric layer on tops of the structures and conformally depositing a spacer dielectric layer over the structures. The spacer dielectric layer is removed from horizontal surfaces and a protection layer is conformally deposited over the structures. The gaps are filled with a flowable dielectric, which is recessed to a height along sidewalls of the structures by a selective etch process such that the protection layer protects the spacer dielectric layer on sidewalls of the structures. The first dielectric layer and the spacer dielectric layer are exposed above the height using a higher etch resistance than the protection layer to maintain dimensions of the spacer layer dielectric through the etching processes. The gaps are filled by a high density plasma fill.
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