公开(公告)号：US20060012940A1

公开(公告)日：2006-01-19

申请号：US11179460

申请日：2005-07-13

申请人： Il-jong Song ,  Dong-ha Shim ,  Hyung-jae Shin ,  Soon-cheol Kweon ,  Che-heung Kim ,  Sang-hun Lee ,  Young-tack Hong

发明人： Il-jong Song ,  Dong-ha Shim ,  Hyung-jae Shin ,  Soon-cheol Kweon ,  Che-heung Kim ,  Sang-hun Lee ,  Young-tack Hong

IPC分类号： H01L21/683

CPC分类号： H01H59/0009 ,  H01H2059/0018

摘要： A MEMS RF-switch is provided for controlling switching on/off of transmission of AC signals. The MEMS RF-switch of the present invention includes: a first electrode coupled to one terminal of the power source; a semiconductor layer combined with an upper surface of the first electrode, and forming a potential barrier to become insulated when a bias signal is applied from the power source; and a second electrode disposed at a predetermined distance away from the semiconductor layer, and being coupled to the other terminal of the power source, wherein the second electrode contacts the semiconductor layer when a bias signal is applied from the power source. Therefore, although the bias signal may not be cut off, free electrons and holes are recombined in the semiconductor layer, whereby charge buildup and sticking can be prevented.

摘要翻译： 提供了用于控制AC信号的传输的接通/断开的MEMS RF开关。 本发明的MEMS RF开关包括：耦合到电源的一个端子的第一电极; 与所述第一电极的上表面组合的半导体层，并且当从所述电源施加偏置信号时，形成电位势垒以变得绝缘; 以及第二电极，设置在距离半导体层预定距离处，并且耦合到电源的另一个端子，其中当从电源施加偏置信号时，第二电极接触半导体层。 因此，尽管偏置信号可能不会被切断，但自由电子和空穴在半导体层中重新结合，从而可以防止电荷积累和粘附。

公开(公告)号：US07911300B2

公开(公告)日：2011-03-22

申请号：US12697629

申请日：2010-02-01

申请人： Il-jong Song ,  Dong-ha Shim ,  Hyung-jae Shin ,  Soon-cheol Kweon ,  Che-heung Kim ,  Sang-hun Lee ,  Young-tack Hong

发明人： Il-jong Song ,  Dong-ha Shim ,  Hyung-jae Shin ,  Soon-cheol Kweon ,  Che-heung Kim ,  Sang-hun Lee ,  Young-tack Hong

IPC分类号： H01H51/22

CPC分类号： H01H59/0009 ,  H01H2059/0018

摘要： A MEMS RF-switch is provided for controlling switching on/off of transmission of AC signals. The MEMS RF-switch of the present invention includes: a first electrode coupled to one terminal of the power source; a semiconductor layer combined with an upper surface of the first electrode, and forming a potential barrier to become insulated when a bias signal is applied from the power source; and a second electrode disposed at a predetermined distance away from the semiconductor layer, and being coupled to the other terminal of the power source, wherein the second electrode contacts the semiconductor layer when a bias signal is applied from the power source. Therefore, although the bias signal may not be cut off, free electrons and holes are recombined in the semiconductor layer, whereby charge buildup and sticking can be prevented.

摘要翻译： 提供了用于控制AC信号的传输的接通/断开的MEMS RF开关。 本发明的MEMS RF开关包括：耦合到电源的一个端子的第一电极; 与所述第一电极的上表面组合的半导体层，并且当从所述电源施加偏置信号时，形成电位势垒以变得绝缘; 以及第二电极，设置在距离半导体层预定距离处，并且耦合到电源的另一个端子，其中当从电源施加偏置信号时，第二电极接触半导体层。 因此，尽管偏置信号可能不会被切断，但自由电子和空穴在半导体层中重新结合，从而可以防止电荷积累和粘附。

公开(公告)号：US20100133077A1

公开(公告)日：2010-06-03

申请号：US12697629

申请日：2010-02-01

申请人： Il-jong Song ,  Dong-ha Shim ,  Hyung-jae Shin ,  Soon-cheol Kweon ,  Che-heung Kim ,  Sang-hun Lee ,  Young-tack Hong

发明人： Il-jong Song ,  Dong-ha Shim ,  Hyung-jae Shin ,  Soon-cheol Kweon ,  Che-heung Kim ,  Sang-hun Lee ,  Young-tack Hong

IPC分类号： H01H59/00

CPC分类号： H01H59/0009 ,  H01H2059/0018

摘要： A MEMS RF-switch is provided for controlling switching on/off of transmission of AC signals. The MEMS RF-switch of the present invention includes: a first electrode coupled to one terminal of the power source; a semiconductor layer combined with an upper surface of the first electrode, and forming a potential barrier to become insulated when a bias signal is applied from the power source; and a second electrode disposed at a predetermined distance away from the semiconductor layer, and being coupled to the other terminal of the power source, wherein the second electrode contacts the semiconductor layer when a bias signal is applied from the power source. Therefore, although the bias signal may not be cut off, free electrons and holes are recombined in the semiconductor layer, whereby charge buildup and sticking can be prevented.

摘要翻译： 提供了用于控制AC信号的传输的接通/断开的MEMS RF开关。 本发明的MEMS RF开关包括：耦合到电源的一个端子的第一电极; 与所述第一电极的上表面组合的半导体层，并且当从所述电源施加偏置信号时，形成电位势垒以变得绝缘; 以及第二电极，设置在距离半导体层预定距离处，并且耦合到电源的另一个端子，其中当从电源施加偏置信号时，第二电极接触半导体层。 因此，尽管偏置信号可能不会被切断，但自由电子和空穴在半导体层中重新结合，从而可以防止电荷积累和粘附。

公开(公告)号：US07683747B2

公开(公告)日：2010-03-23

申请号：US11179460

申请日：2005-07-13

申请人： Il-jong Song ,  Dong-ha Shim ,  Hyung-jae Shin ,  Soon-cheol Kweon ,  Che-heung Kim ,  Sang-hun Lee ,  Young-tack Hong

发明人： Il-jong Song ,  Dong-ha Shim ,  Hyung-jae Shin ,  Soon-cheol Kweon ,  Che-heung Kim ,  Sang-hun Lee ,  Young-tack Hong

IPC分类号： H01H51/22

CPC分类号： H01H59/0009 ,  H01H2059/0018

摘要： A MEMS RF-switch is provided for controlling switching on/off of transmission of AC signals. The MEMS RF-switch of the present invention includes: a first electrode coupled to one terminal of the power source; a semiconductor layer combined with an upper surface of the first electrode, and forming a potential barrier to become insulated when a bias signal is applied from the power source; and a second electrode disposed at a predetermined distance away from the semiconductor layer, and being coupled to the other terminal of the power source, wherein the second electrode contacts the semiconductor layer when a bias signal is applied from the power source. Therefore, although the bias signal may not be cut off, free electrons and holes are recombined in the semiconductor layer, whereby charge buildup and sticking can be prevented.

摘要翻译： 提供了用于控制AC信号的传输的接通/断开的MEMS RF开关。 本发明的MEMS RF开关包括：耦合到电源的一个端子的第一电极; 与所述第一电极的上表面组合的半导体层，并且当从所述电源施加偏置信号时，形成电位势垒以变得绝缘; 以及第二电极，设置在距离半导体层预定距离处，并且耦合到电源的另一个端子，其中当从电源施加偏置信号时，第二电极接触半导体层。 因此，尽管偏置信号可能不会被切断，但自由电子和空穴在半导体层中重新结合，从而可以防止电荷积累和粘附。

公开(公告)号：US06989664B2

公开(公告)日：2006-01-24

申请号：US10408779

申请日：2003-04-08

申请人： Dong-ha Shim ,  In-sang Song ,  Young-il Kim ,  Sun-hee Park ,  Young-tack Hong ,  Dong-ki Min

发明人： Dong-ha Shim ,  In-sang Song ,  Young-il Kim ,  Sun-hee Park ,  Young-tack Hong ,  Dong-ki Min

IPC分类号： G01R31/00 ,  G01R29/24 ,  G01R27/26

CPC分类号： G01R21/00 ,  G01R1/06772

摘要： An RF power sensor for measuring power for an RF signal using capacitance includes a substrate preferably formed of a semiconductor, such as silicon or of a dielectric substance, a fixture part fixed to the substrate and forming a signal line and ground lines that transmit RF signals, and a bridge connected to the ground lines and floating over the signal line, wherein the bridge is driven by an external driving force, and the external driving force induces capacitance between the bridge and the signal line. Accordingly, power for an RF signal can be measured through the capacitance between the signal line and the bridge. The RF power sensor facilitates matchings, reduces insertion loss, and can be used in a wide bandwidth because it is based on transmission lines having characteristic impedance. Further, high power can be measured depending upon bridge designs.

公开(公告)号：US07439825B2

公开(公告)日：2008-10-21

申请号：US11448707

申请日：2006-06-08

申请人： Kuang-woo Nam ,  Kook-hyun Sunwoo ,  In-sang Song ,  Sang-wook Kwon ,  Duck-hwan Kim ,  Chul-soo Kim ,  Sang-chul Sul ,  Yun-kwon Park ,  Hae-seok Park ,  Jea-shik Shin ,  Dong-ha Shim ,  Young-tack Hong ,  Jong-seok Kim ,  Seok-mo Chang ,  Seok-chul Yun

发明人： Kuang-woo Nam ,  Kook-hyun Sunwoo ,  In-sang Song ,  Sang-wook Kwon ,  Duck-hwan Kim ,  Chul-soo Kim ,  Sang-chul Sul ,  Yun-kwon Park ,  Hae-seok Park ,  Jea-shik Shin ,  Dong-ha Shim ,  Young-tack Hong ,  Jong-seok Kim ,  Seok-mo Chang ,  Seok-chul Yun

IPC分类号： H03H9/56 ,  H03H9/54

CPC分类号： H03H9/588 ,  H03H3/02 ,  H03H9/02228 ,  H03H2003/0071

摘要： An integrated filter including a film bulk acoustic resonator (FBAR) and a surface acoustic wave (SAW) resonator and a method of fabricating the integrated filter. The integrated filter includes: a substrate; a first electrode positioned in a predetermined first area on an upper surface of the substrate; a first piezoelectric layer positioned on the first electrode; a second electrode positioned on the first piezoelectric layer; a second piezoelectric layer positioned in a predetermined second area on the upper surface of the substrate; and at least one inter-digital transducer (IDT) electrode positioned on the second piezoelectric layer. The IDT electrode includes: a first IDT electrode formed in a comb structure on the second piezoelectric layer; and a second IDT electrode formed in a comb structure on the second piezoelectric layer so as to mesh with the first IDT electrode. The first and second piezoelectric layers are formed of an identical material. Thus, an integrated filter which operates in various frequency bands can be made compact.

摘要翻译： 一种包括膜体声波谐振器（FBAR）和表面声波（SAW）谐振器的集成滤波器以及一体化滤波器的制造方法。 集成滤波器包括：基板; 位于所述基板的上表面上的预定第一区域中的第一电极; 位于所述第一电极上的第一压电层; 位于所述第一压电层上的第二电极; 位于所述基板的上表面上的预定的第二区域中的第二压电层; 和位于第二压电层上的至少一个数字间换能器（IDT）电极。 IDT电极包括：在第二压电层上形成为梳状结构的第一IDT电极; 以及在第二压电层上形成为梳状结构的第二IDT电极，以便与第一IDT电极啮合。 第一和第二压电层由相同的材料形成。 因此，可以使在各种频带中工作的集成滤波器紧凑。

公开(公告)号：US20070024396A1

公开(公告)日：2007-02-01

申请号：US11448707

申请日：2006-06-08

申请人： Kuang-woo Nam ,  Kook-hyun Sunwoo ,  In-sang Song ,  Sang-wook Kwon ,  Duck-hwan Kim ,  Chul-soo Kim ,  Sang-chul Sul ,  Yun-kwon Park ,  Hae-seok Park ,  Jea-shik Shin ,  Dong-ha Shim ,  Young-tack Hong ,  Jong-seok Kim ,  Seok-mo Chang ,  Seok-Chul Yun

发明人： Kuang-woo Nam ,  Kook-hyun Sunwoo ,  In-sang Song ,  Sang-wook Kwon ,  Duck-hwan Kim ,  Chul-soo Kim ,  Sang-chul Sul ,  Yun-kwon Park ,  Hae-seok Park ,  Jea-shik Shin ,  Dong-ha Shim ,  Young-tack Hong ,  Jong-seok Kim ,  Seok-mo Chang ,  Seok-Chul Yun

IPC分类号： H03H9/56

CPC分类号： H03H9/588 ,  H03H3/02 ,  H03H9/02228 ,  H03H2003/0071

摘要： An integrated filter including a film bulk acoustic resonator (FBAR) and a surface acoustic wave (SAW) resonator and a method of fabricating the integrated filter. The integrated filter includes: a substrate; a first electrode positioned in a predetermined first area on an upper surface of the substrate; a first piezoelectric layer positioned on the first electrode; a second electrode positioned on the first piezoelectric layer; a second piezoelectric layer positioned in a predetermined second area on the upper surface of the substrate; and at least one inter-digital transducer (IDT) electrode positioned on the second piezoelectric layer. The IDT electrode includes: a first IDT electrode formed in a comb structure on the second piezoelectric layer; and a second IDT electrode formed in a comb structure on the second piezoelectric layer so as to mesh with the first IDT electrode. The first and second piezoelectric layers are formed of an identical material. Thus, an integrated filter which operates in various frequency bands can be made compact.

摘要翻译： 一种包括膜体声波谐振器（FBAR）和表面声波（SAW）谐振器的集成滤波器以及一体化滤波器的制造方法。 集成滤波器包括：基板; 位于所述基板的上表面上的预定第一区域中的第一电极; 位于所述第一电极上的第一压电层; 位于所述第一压电层上的第二电极; 位于所述基板的上表面上的预定的第二区域中的第二压电层; 和位于第二压电层上的至少一个数字间换能器（IDT）电极。 IDT电极包括：在第二压电层上形成为梳状结构的第一IDT电极; 以及在第二压电层上形成为梳状结构的第二IDT电极，以便与第一IDT电极啮合。 第一和第二压电层由相同的材料形成。 因此，可以使在各种频带中工作的集成滤波器紧凑。

公开(公告)号：US07122942B2

公开(公告)日：2006-10-17

申请号：US10951612

申请日：2004-09-29

申请人： In-sang Song ,  Young-il Kim ,  Moon-chul Lee ,  Dong-ha Shim ,  Young-tack Hong ,  Sun-hee Park ,  Kuang-woo Nam

发明人： In-sang Song ,  Young-il Kim ,  Moon-chul Lee ,  Dong-ha Shim ,  Young-tack Hong ,  Sun-hee Park ,  Kuang-woo Nam

IPC分类号： H01L41/08

CPC分类号： H01P1/127 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006

摘要： A micro switch having a dielectric layer having a movement region formed on a substrate, a conductive layer formed on a predetermined portion of the movement region, a dielectric film formed on the conductive layer, first and second electric conductors formed a predetermined distance above the dielectric film, one or two lower electrodes formed on the movement region, and one or two upper electrodes formed a predetermined distance above the two lower electrodes, the one or two upper electrodes moving the conductive layer and the dielectric film upwards when an electrostatic force occurs between the upper and lower electrodes, and capacitively coupled with the first and second electric conductors to allow a current to flow between the first and second electric conductors. Such a micro switch has a high on/off ratio and isolation degree and a simple structure, and can be fabricated in a very easy process.

摘要翻译： 一种具有介电层的微型开关，具有形成在基板上的移动区域，形成在所述移动区域的预定部分上的导电层，形成在所述导电层上的电介质膜，在所述电介质上形成预定距离的第一和第二导电体 膜，形成在移动区域上的一个或两个下电极，以及在两个下电极之上形成预定距离的一个或两个上电极，一个或两个上电极在静电力发生时向上移动导电层和电介质膜 上电极和下电极，并且与第一和第二电导体电容耦合以允许电流在第一和第二电导体之间流动。 这种微型开关具有高的开/关比和隔离度和简单的结构，并且可以在非常容易的过程中制造。

公开(公告)号：US20050040486A1

公开(公告)日：2005-02-24

申请号：US10951612

申请日：2004-09-29

申请人： In-sang Song ,  Young-il Kim ,  Moon-chul Lee ,  Dong-ha Shim ,  Young-tack Hong ,  Sun-hee Park ,  Kuang-woo Nam

发明人： In-sang Song ,  Young-il Kim ,  Moon-chul Lee ,  Dong-ha Shim ,  Young-tack Hong ,  Sun-hee Park ,  Kuang-woo Nam

IPC分类号： B81B3/00 ,  H01H57/00 ,  H01H59/00 ,  H01L29/417 ,  H01L41/09 ,  H01P1/12 ,  H01L21/76

CPC分类号： H01P1/127 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006

摘要： A micro switch having a dielectric layer having a movement region formed on a substrate, a conductive layer formed on a predetermined portion of the movement region, a dielectric film formed on the conductive layer, first and second electric conductors formed a predetermined distance above the dielectric film, one or two lower electrodes formed on the movement region, and one or two upper electrodes formed a predetermined distance above the two lower electrodes, the one or two upper electrodes moving the conductive layer and the dielectric film upwards when an electrostatic force occurs between the upper and lower electrodes, and capacitively coupled with the first and second electric conductors to allow a current to flow between the first and second electric conductors. Such a micro switch has a high on/off ratio and isolation degree and a simple structure, and can be fabricated in a very easy process.

摘要翻译： 一种具有介电层的微型开关，具有形成在基板上的移动区域，形成在所述移动区域的预定部分上的导电层，形成在所述导电层上的电介质膜，在所述电介质上形成预定距离的第一和第二导电体 膜，形成在移动区域上的一个或两个下电极，以及在两个下电极之上形成预定距离的一个或两个上电极，一个或两个上电极在静电力发生时向上移动导电层和电介质膜 上电极和下电极，并且与第一和第二电导体电容耦合以允许电流在第一和第二电导体之间流动。 这种微型开关具有高的开/关比和隔离度和简单的结构，并且可以在非常容易的过程中制造。

公开(公告)号：US07274147B2

公开(公告)日：2007-09-25

申请号：US11303986

申请日：2005-12-19

申请人： Dong-ha Shim ,  Kuang-woo Nam ,  Yun-kwon Park ,  In-sang Song

发明人： Dong-ha Shim ,  Kuang-woo Nam ,  Yun-kwon Park ,  In-sang Song

IPC分类号： H03B9/10

CPC分类号： H01J25/50

摘要： A magnetron which generates a high-frequency energy in the Terahertz band is provided. The magnetron includes a cathode unit, which is connected to a terminal of a power source, and which selectively emits an electron according to when power is supplied; an anode block, which is connected to another terminal of the power source, and which has an operation chamber in which the emitted electron moves; and one or more resonance cavities which generate a high-frequency energy by a movement of the emitted electron; and a pair of magnet units forming a magnetic field in the operation chamber.

摘要翻译： 提供在太赫兹频带中产生高频能量的磁控管。 磁控管包括阴极单元，其连接到电源的端子，并且根据供电时选择性地发射电子; 阳极块，其连接到电源的另一个端子，并且具有其中发射的电子移动的操作室; 以及通过所发射的电子的运动产生高频能量的一个或多个谐振腔; 以及在操作室中形成磁场的一对磁体单元。