公开(公告)号：US20250146170A1

公开(公告)日：2025-05-08

申请号：US19015969

申请日：2025-01-10

Applicant: Illinois Tool Works Inc.

Inventor： Richard S. Kim ,  Jeung Hun Park

IPC: C30B19/10 ,  B82Y15/00 ,  B82Y30/00 ,  C30B29/46 ,  C30B31/06 ,  C30B33/02 ,  C30B33/10

Abstract: Methods and systems are provided for a homogenous, single crystal, electrically conductive, and narrow bandgap PbSe nanostructure is synthesized using a chemical bath deposition on, for example, quartz substrates, and includes a tunable iodine doping process to select the size and/or shape of the nanostructures. The single crystalline PbSe nanostructure can be exposed following an isolation process (e.g., etching process), and the concentration and/or distribution of iodine across multiple PbSe nanostructures (e.g., on a quartz substrate) can be adjusted during post processing steps, including heat treatments.

公开(公告)号：US20250063847A1

公开(公告)日：2025-02-20

申请号：US18777666

申请日：2024-07-19

Applicant: Illinois Tool Works Inc.

Inventor： Richard S. Kim ,  Jeung Hun Park

IPC: H01L31/032 ,  H01L31/0368 ,  H01L31/0392

Abstract: Methods and systems are provided for a photoconductive thin film of a plurality of Lead Selenide (PbSe) nanostructures arranged on quartz substrates. The photoconductive thin film is synthesized, for example, using a chemical bath deposition, and can include a tunable iodine doping process to select the size and/or shape of the nanostructures. An oxygenation sensitization process at a sufficiently high temperature can increase carrier mobility of the thin film.

公开(公告)号：US12195874B2

公开(公告)日：2025-01-14

申请号：US17988326

申请日：2022-11-16

Applicant: Illinois Tool Works Inc.

Inventor： Richard S. Kim ,  Jeung Hun Park

IPC: C30B19/10 ,  B82Y15/00 ,  B82Y30/00 ,  C30B29/46 ,  C30B31/06 ,  C30B33/02 ,  C30B33/10

Abstract: Methods and systems are provided for a homogenous, single crystal, electrically conductive, and narrow bandgap PbSe nanostructure is synthesized using a chemical bath deposition on, for example, quartz substrates, and includes a tunable iodine doping process to select the size and/or shape of the nanostructures. The single crystalline PbSe nanostructure can be exposed following an isolation process (e.g., etching process), and the concentration and/or distribution of iodine across multiple PbSe nanostructures (e.g., on a quartz substrate) can be adjusted during post processing steps, including heat treatments.

公开(公告)号：US20230343889A1

公开(公告)日：2023-10-26

申请号：US18301027

申请日：2023-04-14

Applicant: Illinois Tool Works Inc.

Inventor： Richard S. Kim ,  Jeung Hun Park ,  Russell Dahl

IPC: H01L31/18 ,  H01L31/032 ,  H01L31/103 ,  H01L31/105

CPC classification number: H01L31/18 ,  H01L31/0324 ,  H01L31/1037 ,  H01L31/105

Abstract: Methods and systems are provided for photodetectors employing a hybrid PIN or PN Lead Selenium (PbSe) junction. In some examples, the PbSe junction can include one or more semiconducting layers, including n-type layers, n+-type layers, p(i)-type layers, and/or p+-type layers, as a list of non-limiting examples. Photodetectors employing PbSe PIN or PN junctions are created. Also disclosed are methods for preparing photo-sensitive PbSe semiconducting layers for detection of electromagnetic energy (e.g., mid-wavelength infrared (MWIR)).

公开(公告)号：US20230160099A1

公开(公告)日：2023-05-25

申请号：US17988326

申请日：2022-11-16

Applicant: Illinois Tool Works Inc.

Inventor： Richard S. Kim ,  Jeung Hun Park

IPC: C30B19/10 ,  B82Y15/00 ,  B82Y30/00 ,  C30B29/46 ,  C30B31/06 ,  C30B33/02 ,  C30B33/10

CPC classification number: C30B19/10 ,  B82Y15/00 ,  B82Y30/00 ,  C30B29/46 ,  C30B31/06 ,  C30B33/02 ,  C30B33/10

Abstract: Methods and systems are provided for a homogenous, single crystal, electrically conductive, and narrow bandgap PbSe nanostructure is synthesized using a chemical bath deposition on, for example, quartz substrates, and includes a tunable iodine doping process to select the size and/or shape of the nanostructures. The single crystalline PbSe nanostructure can be exposed following an isolation process (e.g., etching process), and the concentration and/or distribution of iodine across multiple PbSe nanostructures (e.g., on a quartz substrate) can be adjusted during post processing steps, including heat treatments.