摘要:
Provided are a method of fabricating a nanostructure array and a device including the nanostructure array. Nanoscale patterning is caused at an interface of a resist layer by light passed through a focusing layer. By such nanoscale patterning, a nanostructure array is fabricated on a substrate in various ways. As the focusing layer, an array of beads or lenses is used, and a pattern of the resist layer may include a nanoscale pore-opening and an undercut structure connected to a lower portion of the opening. The method facilitates adjustment of the size and shape of nanostructures and the interval between the nanostructures. Also, performance of the device including the nanostructure array can be improved. In particular, the method and device result in a sensor having improved sensitivity and reliability optimized for an environment and purpose to be used.
摘要:
The compounds include substituted rifamycin derivatives in which a quinolone carboxylic acid pharmacophore is covalently bonded to a benzoxazinorifamycin or a spiropiperidinorifamycin. The rifamycin derivatives are useful as antimicrobial agents and are effective against a number of human and veterinary Gram positive and Gram negative pathogens. The advantage of the inventive compounds is that both the rifamycin and quinolone antibacterial pharmacophores are co-delivered with matched pharmacokinetics to the targeted pathogens of interests. Delivery of multiple antibacterial pharmacophores simultaneously to the targeted pathogens has the maximum chance of achieving synergy and minimizing the development of resistance to the antibiotics given.
摘要:
Compounds of the current invention relate to rifamycin derivatives having antimicrobial activities, including activities against drug-resistant microorganisms. More specifically, compounds of the current invention relate to a series of novel spiro rifamycin derivatives which have demonstrated potent antimicrobial activity.
摘要:
A fiber-optic surface plasmon resonance sensor may include an optical fiber and a surface plasmon excitation layer. The optical fiber may include a core, a cladding surrounding the core, and a depression. The surface plasmon excitation layer may include a first excitation layer, a second excitation layer and an optical waveguide layer between the first excitation layer and the second excitation layer. Incident light incident through the core may be coupled to the surface plasmon excitation layer at a specific angle of incidence and wavelength satisfying the surface plasmon resonance condition. Depending on the polarizing direction of the incident light, an s-polarized component may be coupled to the guided-wave mode in the optical waveguide layer constituting the surface plasmon excitation layer.
摘要:
The present invention provides a phase change memory cell comprising (GeASbBTeC)1−x(RaSbTeC)x solid solution, the solid solution being formed from a Ge—Sb—Te based alloy and a ternary metal alloy R—S—Te sharing same crystal structure as the Ge—Sb—Te based alloy. A nonvolatile phase change memory cell in accordance with the present invention provides many advantages such as high speed, high data retention, and multi-bit operation.
摘要翻译:本发明提供了一种相变存储器单元,其包括(>> Sb> Te>>>>>((((((((((( R a固体溶液,固溶体由Ge-Sb-Te基合金和三元金属形成 合金RS-Te与Ge-Sb-Te基合金具有相同的晶体结构。 根据本发明的非易失性相变存储单元提供了许多优点,例如高速度,高数据保持和多位操作。
摘要:
The present invention provides a non-volatile phase change memory cell containing an electrode contact layer disposed between a metal electrode layer and a phase change material layer, the electrode contact layer being formed of a transparent conducting oxide-based material which has a high electric conductivity, a low thermal conductivity and a good thermal stability. A non-volatile phase change memory cell according to the present invention may be utilized to reduce the electric power needed for reset and set operation.
摘要:
A method of controlling an image photographing apparatus to track a subject using a non-viewable pixel region of an image sensor includes detecting a motion vector of a subject when a moving image is photographed, determining whether a non-viewable pixel region of an image sensor is present in the direction of the detected motion vector of the subject, and moving a photographing region to the non-viewable pixel region so as to track the motion of the subject. Accordingly, the moving subject may be tracked within a range of a predetermined Field of View (FOV) of the image photographing apparatus without an additional hardware system.
摘要:
The present invention provides a phase change non-volatile memory material comprising a base material and at least one non-metallic light element selected from the group consisting of boron, carbon, nitrogen and oxygen, wherein the base material has a composition which corresponds to either that of congruent melting of the type with a minimum melting point or that of eutectic melting within the range of ±0.15 atomic fraction for each constituent element, thereby having a melting temperature of 600° C. or lower. The phase change non-volatile memory material according to the present invention may be utilized to reduce the electric power needed for reset/set operation and thermal interference between memory cells.
摘要:
The present invention relates to rifamycin 3-iminomethylenyl (—CH═N—) derivatives having antimicrobial activities, including activities against drug-resistant microorganisms. The claimed rifamycin derivative has a rifamycin moiety covalently linked to a linker through an iminomethylenyl (—CH═N—) group at the C-3 carbon of the rifamycin moiety and the linker is, in turn, covalently linked to a quinolone structure or its pharmacophore within the DNA gyrase and topoisomerase IV inhibitor family. The inventive rifamycins are novel and exhibit activity against both rifampin and ciprofloxacin-resistant microorganisms.
摘要:
The present invention provides a phase change memory cell comprising (GeASbBTeC)1-X(RaSbTeC)X solid solution, the solid solution being formed from a Ge—Sb—Te based alloy and a ternary metal alloy R—S—Te sharing same crystal structure as the Ge—Sb—Te based alloy. A nonvolatile phase change memory cell in accordance with the present invention provides many advantages such as high speed, high data retention, and multi-bit operation.