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    Phase change memory devices including memory cells having different phase change materials and related methods and systems
    3.
    发明授权
    Phase change memory devices including memory cells having different phase change materials and related methods and systems 有权
    相变存储器件包括具有不同相变材料的存储单元以及相关的方法和系统

    公开(公告)号：US07558100B2

    公开(公告)日：2009-07-07

    申请号：US11881062

    申请日：2007-07-25

    申请人： Dong-Ho Ahn ,  Hideki Horii ,  Jun-Soo Bae

    发明人： Dong-Ho Ahn ,  Hideki Horii ,  Jun-Soo Bae

    IPC分类号： G11C11/00

    CPC分类号： G11C11/5678 ,  G11C7/04 ,  G11C13/0004 ,  G11C2213/79 ,  H01L27/2409 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/148

    摘要： A phase change memory device may include an integrated circuit substrate and first and second phase change memory elements on the integrated circuit substrate. The first phase change memory element may include a first phase change material having a first crystallization temperature. The second phase change memory element may include a second phase change material having a second crystallization temperature. Moreover, the first and second crystallization temperatures may be different so that the first and second phase change memory elements are programmable at different temperatures. Related methods and systems are also discussed.

    摘要翻译： 相变存储器件可以包括集成电路衬底以及集成电路衬底上的第一和第二相变存储元件。 第一相变存储元件可以包括具有第一结晶温度的第一相变材料。 第二相变存储元件可以包括具有第二结晶温度的第二相变材料。 此外，第一和第二结晶温度可以不同，使得第一和第二相变存储元件可在不同温度下编程。 还讨论了相关方法和系统。

    Method of forming a semiconductor device
    4.
    发明授权
    Method of forming a semiconductor device 有权
    形成半导体器件的方法

    公开(公告)号：US06699799B2

    公开(公告)日：2004-03-02

    申请号：US10134747

    申请日：2002-04-30

    申请人： Dong-Ho Ahn ,  Soo-Jin Hong ,  Jung-Il Lee ,  Kyung-won Park

    发明人： Dong-Ho Ahn ,  Soo-Jin Hong ,  Jung-Il Lee ,  Kyung-won Park

    IPC分类号： H01L21469

    CPC分类号： H01L21/0234 ,  H01L21/02134 ,  H01L21/02164 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/31053 ,  H01L21/316 ,  H01L21/76229

    摘要： A method of forming a semiconductor device includes a liner is conformally stacked on a semiconductor substrate before coating an SOG layer thereon, and then curing the SOG layer, preferably in an ambient of oxygen radicals formed at a temperature of 1000° C. or higher when oxygen and hydrogen are supplied. The oxygen radicals are preferably formed by irradiating ultraviolet rays to ozone or forming oxygen plasma. The SOG layer is preferably made of a polysilazane-based material that may promote a conversion of the SOG layer into a silicon oxide layer.

    摘要翻译： 一种形成半导体器件的方法包括：在涂覆SOG层之前，在半导体衬底上保形地层叠衬垫，然后固化SOG层，优选在1000℃或更高温度下形成的氧自由基的环境中固化 供应氧气和氢气。 氧自由基优选通过将紫外线照射到臭氧或形成氧等离子体来形成。 SOG层优选由可以促进SOG层转化为氧化硅层的基于聚硅氮烷的材料制成。

    Method of forming a trench type isolation layer
    5.
    发明授权
    Method of forming a trench type isolation layer 失效

    公开(公告)号：US06596607B2

    公开(公告)日：2003-07-22

    申请号：US09951710

    申请日：2001-09-14

    申请人： Dong-Ho Ahn

    发明人： Dong-Ho Ahn

    IPC分类号： H01L2176

    CPC分类号： H01L21/76224

    摘要： A method of forming a trench type isolation layer is provide, wherein the method comprises: forming a trench by etching after forming a trench etching pattern on a substrate; forming a silicon nitride liner on an inner wall of the trench; filling the trench with a first buried oxide layer; exposing an upper part of the liner of the trench by recessing the first buried oxide layer using a wet process; removing the upper part of the silicon nitride liner using isotropic etching; and filling the recessed space of the trench with a second buried oxide layer. The method may further comprise: forming the trench etching pattern by depositing and patterning a silicon nitride layer, and forming a thermal oxide layer, preferably through annealing, for healing etching defects on an inner wall of the trench, between forming the trench and forming the liner.

    Anti-lock brake equipment solenoid valve
    9.
    发明授权
    Anti-lock brake equipment solenoid valve 失效
    防抱死制动设备电磁阀

    公开(公告)号：US06918570B2

    公开(公告)日：2005-07-19

    申请号：US10322734

    申请日：2002-12-19

    申请人： Dong-Ho Ahn

    发明人： Dong-Ho Ahn

    IPC分类号： B60T8/34 ,  B60T8/36 ,  F16K31/06 ,  F16K31/02

    CPC分类号： F16K31/0658 ,  B60T8/363

    摘要： A hydraulic control valve for an Anti-lock Braking System (ABS) includes a modulator block having at least a housing, an inlet port, a receiving unit, and an outlet port. The housing is coupled to at least a plunger, an armature, and a coil body. The housing also has a coupling hole to receive a valve seat. Upon application of a current, a coil generates a magnetic field causing a plunger coupled with the armature to perform a reciprocating motion in which a projection of the plunger moves in contact with and separates from an aperture in the valve seat to adjust fluid flow. The hydraulic control valve also comprises fluid flow paths, provided in a space between the valve seat and the housing, which communicate with an outlet port. The hydraulic control valve accommodates at least a filter and a seal cup on the outer periphery of the valve seat.

    摘要翻译： 用于防抱死制动系统（ABS）的液压控制阀包括至少具有壳体，入口，接收单元和出口的调制器块。 壳体至少连接到柱塞，电枢和线圈体。 壳体还具有用于接收阀座的联接孔。 在施加电流时，线圈产生磁场，使得与电枢耦合的柱塞执行往复运动，其中柱塞的突起与阀座中的孔接触并与阀座中的孔分离以调节流体流动。 液压控制阀还包括设置在阀座和壳体之间的空间中的流体流动路径，其与出口连通。 液压控制阀至少容纳阀座外周上的过滤器和密封杯。