公开(公告)号：US07632456B2

公开(公告)日：2009-12-15

申请号：US11411558

申请日：2006-04-25

申请人： Byung-ki Cheong ,  Jeung-hyun Jeong ,  Dae-Hwan Kang ,  Han Ju Jung ,  Taek Sung Lee ,  In Ho Kim ,  Won Mok Kim ,  Kyeong Seok Lee

发明人： Byung-ki Cheong ,  Jeung-hyun Jeong ,  Dae-Hwan Kang ,  Han Ju Jung ,  Taek Sung Lee ,  In Ho Kim ,  Won Mok Kim ,  Kyeong Seok Lee

IPC分类号： C22C12/00 ,  B41M5/26 ,  G11B7/24

CPC分类号： H01L45/1233 ,  C01B19/002 ,  H01L45/06 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1625 ,  Y10T428/21

摘要： The present invention provides a phase change non-volatile memory material comprising a base material and at least one non-metallic light element selected from the group consisting of boron, carbon, nitrogen and oxygen, wherein the base material has a composition which corresponds to either that of congruent melting of the type with a minimum melting point or that of eutectic melting within the range of ±0.15 atomic fraction for each constituent element, thereby having a melting temperature of 600° C. or lower. The phase change non-volatile memory material according to the present invention may be utilized to reduce the electric power needed for reset/set operation and thermal interference between memory cells.

摘要翻译： 本发明提供了一种相变非挥发性记忆材料，其包括基材和至少一种选自硼，碳，氮和氧的非金属光元素，其中所述基材具有对应于 对于每个构成元素，具有最低熔点或共晶熔化的类型的均匀熔融在±0.15原子级数范围内，从而具有600℃或更低的熔融温度。 可以利用根据本发明的相变非易失性存储材料来降低复位/设置操作所需的电力以及存储单元之间的热干扰。

公开(公告)号：US20070001160A1

公开(公告)日：2007-01-04

申请号：US11411558

申请日：2006-04-25

申请人： Byung-ki Cheong ,  Jeung-hyun Jeong ,  Dae-Hwan Kang ,  Han Ju Jung ,  Taek Sung Lee ,  In Ho Kim ,  Won Mok Kim ,  Kyeong Seok Lee

发明人： Byung-ki Cheong ,  Jeung-hyun Jeong ,  Dae-Hwan Kang ,  Han Ju Jung ,  Taek Sung Lee ,  In Ho Kim ,  Won Mok Kim ,  Kyeong Seok Lee

IPC分类号： H01L47/00

CPC分类号： H01L45/1233 ,  C01B19/002 ,  H01L45/06 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1625 ,  Y10T428/21

摘要： The present invention provides a phase change non-volatile memory material comprising a base material and at least one non-metallic light element selected from the group consisting of boron, carbon, nitrogen and oxygen, wherein the base material has a composition which corresponds to either that of congruent melting of the type with a minimum melting point or that of eutectic melting within the range of ±0.15 atomic fraction for each constituent element, thereby having a melting temperature of 600° C. or lower. The phase change non-volatile memory material according to the present invention may be utilized to reduce the electric power needed for reset/set operation and thermal interference between memory cells.

摘要翻译： 本发明提供了一种相变非挥发性记忆材料，其包括基材和至少一种选自硼，碳，氮和氧的非金属光元素，其中所述基材具有对应于 对于每个构成元素，具有最低熔点或共晶熔化的类型的均匀熔融在±0.15原子级数范围内，从而具有600℃或更低的熔融温度。 可以利用根据本发明的相变非易失性存储器材料来降低复位/设置操作所需的电力以及存储单元之间的热干扰。

公开(公告)号：US07851828B2

公开(公告)日：2010-12-14

申请号：US11290712

申请日：2005-11-29

申请人： Byung-ki Cheong ,  Jeung-hyun Jeong ,  Dae-Hwan Kang ,  Taek Sung Lee ,  In Ho Kim ,  Kyeong Seok Lee ,  Won Mok Kim ,  Dong-Ho Ahn ,  Ki-Bum Kim

发明人： Byung-ki Cheong ,  Jeung-hyun Jeong ,  Dae-Hwan Kang ,  Taek Sung Lee ,  In Ho Kim ,  Kyeong Seok Lee ,  Won Mok Kim ,  Dong-Ho Ahn ,  Ki-Bum Kim

IPC分类号： H01L29/768

CPC分类号： H01L45/06 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/126 ,  H01L45/144

摘要： The present invention provides a non-volatile phase change memory cell containing an electrode contact layer disposed between a metal electrode layer and a phase change material layer, the electrode contact layer being formed of a transparent conducting oxide-based material which has a high electric conductivity, a low thermal conductivity and a good thermal stability. A non-volatile phase change memory cell according to the present invention may be utilized to reduce the electric power needed for reset and set operation.

摘要翻译： 本发明提供了一种非易失性相变存储单元，其包含设置在金属电极层和相变材料层之间的电极接触层，电极接触层由透明导电氧化物基材料形成，该材料具有高导电性 ，导热性低，热稳定性好。 可以使用根据本发明的非易失性相变存储器单元来减少复位和设置操作所需的电力。

公开(公告)号：US20060113573A1

公开(公告)日：2006-06-01

申请号：US11290712

申请日：2005-11-29

申请人： Byung-ki Cheong ,  Jeung-hyun Jeong ,  Dao-Hwan Kang ,  Taek Sung Lee ,  In Ho Kim ,  Kyeong Seok Lee ,  Won Mok Kim ,  Dong-Ho Ahn ,  Ki-Burn Kim

发明人： Byung-ki Cheong ,  Jeung-hyun Jeong ,  Dao-Hwan Kang ,  Taek Sung Lee ,  In Ho Kim ,  Kyeong Seok Lee ,  Won Mok Kim ,  Dong-Ho Ahn ,  Ki-Burn Kim

IPC分类号： H01L29/768

CPC分类号： H01L45/06 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/126 ,  H01L45/144

摘要： The present invention provides a non-volatile phase change memory cell containing an electrode contact layer disposed between a metal electrode layer and a phase change material layer, the electrode contact layer being formed of a transparent conducting oxide-based material which has a high electric conductivity, a low thermal conductivity and a good thermal stability. A non-volatile phase change memory cell according to the present invention may be utilized to reduce the electric power needed for reset and set operation.

摘要翻译： 本发明提供了一种非易失性相变存储单元，其包含设置在金属电极层和相变材料层之间的电极接触层，电极接触层由透明导电氧化物基材料形成，该材料具有高导电性 ，导热性低，热稳定性好。 可以使用根据本发明的非易失性相变存储器单元来减少复位和设置操作所需的电力。

公开(公告)号：US07233054B1

公开(公告)日：2007-06-19

申请号：US11290713

申请日：2005-11-29

申请人： Dong Ho Anh ,  Tae-Yon Lee ,  Ki Bum Kim ,  Byung-ki Cheong ,  Dae-Hwan Kang ,  Jeung-hyun Jeong ,  In Ho Kim ,  Taek Sung Lee ,  Won Mok Kim

发明人： Dong Ho Anh ,  Tae-Yon Lee ,  Ki Bum Kim ,  Byung-ki Cheong ,  Dae-Hwan Kang ,  Jeung-hyun Jeong ,  In Ho Kim ,  Taek Sung Lee ,  Won Mok Kim

IPC分类号： H01L29/12

CPC分类号： H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144

摘要： The present invention provides a phase change memory cell comprising (GeASbBTeC)1-X(RaSbTeC)X solid solution, the solid solution being formed from a Ge—Sb—Te based alloy and a ternary metal alloy R—S—Te sharing same crystal structure as the Ge—Sb—Te based alloy. A nonvolatile phase change memory cell in accordance with the present invention provides many advantages such as high speed, high data retention, and multi-bit operation.

摘要翻译： 本发明提供了一种相变存储器单元，其包括（>> Sb> Te>>>>>>（（（（（（（（ 固体溶液由Ge-Sb-Si固溶体形成， Te基合金和三元金属合金RS-Te与Ge-Sb-Te基合金具有相同的晶体结构。 根据本发明的非易失性相变存储单元提供了许多优点，例如高速度，高数据保持和多位操作。

公开(公告)号：US20070120104A1

公开(公告)日：2007-05-31

申请号：US11290713

申请日：2005-11-29

申请人： Dong Ho Ahn ,  Tae-Yon Lee ,  Ki Bum Kim ,  Byung-ki Cheong ,  Dae-Hwan Kang ,  Jeung-hyun Jeong ,  In Ho Kim ,  Taek Sung Lee ,  Won Mok Kim

发明人： Dong Ho Ahn ,  Tae-Yon Lee ,  Ki Bum Kim ,  Byung-ki Cheong ,  Dae-Hwan Kang ,  Jeung-hyun Jeong ,  In Ho Kim ,  Taek Sung Lee ,  Won Mok Kim

IPC分类号： H01L29/02

CPC分类号： H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144

摘要： The present invention provides a phase change memory cell comprising (GeASbBTeC)1−x(RaSbTeC)x solid solution, the solid solution being formed from a Ge—Sb—Te based alloy and a ternary metal alloy R—S—Te sharing same crystal structure as the Ge—Sb—Te based alloy. A nonvolatile phase change memory cell in accordance with the present invention provides many advantages such as high speed, high data retention, and multi-bit operation.

摘要翻译： 本发明提供了一种相变存储器单元，其包括（>> Sb> Te>>>>>（（（（（（（（（（（ R a固体溶液，固溶体由Ge-Sb-Te基合金和三元金属形成 合金RS-Te与Ge-Sb-Te基合金具有相同的晶体结构。 根据本发明的非易失性相变存储单元提供了许多优点，例如高速度，高数据保持和多位操作。

公开(公告)号：US07851778B2

公开(公告)日：2010-12-14

申请号：US11805827

申请日：2007-05-24

申请人： Dae-Hwan Kang ,  In-Ho Kim ,  Byung Ki Cheong ,  Jeung-Hyun Jeong ,  Taek Sung Lee ,  Won Mok Kim ,  Ki-Bum Kim

发明人： Dae-Hwan Kang ,  In-Ho Kim ,  Byung Ki Cheong ,  Jeung-Hyun Jeong ,  Taek Sung Lee ,  Won Mok Kim ,  Ki-Bum Kim

IPC分类号： H01L47/00 ,  H01L21/00

CPC分类号： H01L45/1675 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1625

摘要： The present invention relates to a non-volatile electrical phase change memory device comprising a substrate, a first interlayer dielectric film deposited on the substrate, a bottom electrode layer formed on the first dielectric layer, a second interlayer dielectric film formed on the bottom electrode layer, a phase change material layer deposited on the second interlayer dielectric film, and a top electrode layer formed on said phase change material layer, the bottom electrode layer being brought into contact with the phase change material layer through a contact hole which is formed in the second interlayer dielectric film and filled with the phase change material or bottom electrode material, so that the phase change layer and the bottom electrode layer come into close contact with each other,wherein an interfacial control layer is formed at the interface of the contact hole between the phase change layer and the bottom electrode layer, said interfacial control layer having strong chemical bonds with the phase change material as well as electrical resistivity and thermal conductivity values lower than those of the bottom electrode material.

摘要翻译： 本发明涉及一种非挥发性电相变存储器件，其包括衬底，沉积在衬底上的第一层间电介质膜，形成在第一介电层上的底部电极层，形成在底部电极层上的第二层间电介质膜 沉积在第二层间电介质膜上的相变材料层和形成在所述相变材料层上的顶部电极层，所述底部电极层通过形成在所述相变材料层中的接触孔与所述相变材料层接触， 第二层间电介质膜，并填充有相变材料或底部电极材料，使得相变层和底部电极层彼此紧密接触，其中界面控制层形成在接触孔的界面处， 相变层和底部电极层，所述界面控制层具有强的作用 与相变材料的化学键以及电阻率和热导率值低于底部电极材料。

公开(公告)号：US20070272987A1

公开(公告)日：2007-11-29

申请号：US11805827

申请日：2007-05-24

申请人： Dae-Hwan Kang ,  In-Ho Kim ,  Byung Ki Cheong ,  Jeung-Hyun Jeong ,  Taek Sung Lee ,  Won Mok Kim ,  Ki-Bum Kim

发明人： Dae-Hwan Kang ,  In-Ho Kim ,  Byung Ki Cheong ,  Jeung-Hyun Jeong ,  Taek Sung Lee ,  Won Mok Kim ,  Ki-Bum Kim

IPC分类号： H01L29/76 ,  H01L29/00

CPC分类号： H01L45/1675 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1625

摘要： The present invention relates to a non-volatile electrical phase change memory device comprising a substrate, a first interlayer dielectric film deposited on the substrate, a bottom electrode layer formed on the first dielectric layer, a second interlayer dielectric film formed on the bottom electrode layer, a phase change material layer deposited on the second interlayer dielectric film, and a top electrode layer formed on said phase change material layer, the bottom electrode layer being brought into contact with the phase change material layer through a contact hole which is formed in the second interlayer dielectric film and filled with the phase change material or bottom electrode material, so that the phase change layer and the bottom electrode layer come into close contact with each other, wherein an interfacial control layer is formed at the interface of the contact hole between the phase change layer and the bottom electrode layer, said interfacial control layer having strong chemical bonds with the phase change material as well as electrical resistivity and thermal conductivity values lower than those of the bottom electrode material.

摘要翻译： 本发明涉及一种非挥发性电相变存储器件，其包括衬底，沉积在衬底上的第一层间电介质膜，形成在第一介电层上的底部电极层，形成在底部电极层上的第二层间电介质膜 沉积在第二层间电介质膜上的相变材料层和形成在所述相变材料层上的顶部电极层，所述底部电极层通过形成在所述相变材料层中的接触孔与所述相变材料层接触， 第二层间电介质膜，并填充有相变材料或底部电极材料，使得相变层和底部电极层彼此紧密接触，其中界面控制层形成在接触孔的界面处， 相变层和底部电极层，所述界面控制层具有强的作用 与相变材料的化学键以及电阻率和热导率值低于底部电极材料。

公开(公告)号：US07940637B2

公开(公告)日：2011-05-10

申请号：US12260509

申请日：2008-10-29

申请人： Wook Yeon Hwang ,  Jooho Kim ,  Jung-Hyeon Kim ,  Taek Sung Lee ,  Byung Ki Cheong ,  Hyun Seok Lee ,  Suyoun Lee ,  Won Mok Kim ,  Jeung-hyun Jeong

发明人： Wook Yeon Hwang ,  Jooho Kim ,  Jung-Hyeon Kim ,  Taek Sung Lee ,  Byung Ki Cheong ,  Hyun Seok Lee ,  Suyoun Lee ,  Won Mok Kim ,  Jeung-hyun Jeong

IPC分类号： G11B7/24

CPC分类号： G11B7/252 ,  G11B7/24065 ,  G11B7/2531 ,  G11B7/2533 ,  G11B7/259 ,  G11B7/266 ,  G11B2007/24304 ,  G11B2007/24306 ,  G11B2007/2432

摘要： A super-resolution optical recording medium includes a reflective layer formed on a substrate, a recording layer for recording information thereon, a super-resolution layer made of a chalcogenide semiconductor material, and a first and a second dielectric layers laminated on upper and lower surfaces of the super-resolution layer. The recording layer is made of a material that has a decomposition temperature higher than an information reproduction temperature and does not form bubble recording marks during recording, and the super-resolution layer contains one or more elements selected from the group consisting of nitrogen, oxygen, carbon, and boron.

摘要翻译： 超分辨率光记录介质包括形成在基板上的反射层，用于在其上记录信息的记录层，由硫族化物半导体材料制成的超分辨率层，以及层叠在上表面和下表面上的第一和第二介电层 的超分辨率层。 记录层由分解温度高于信息再现温度的材料制成，并且在记录期间不形成气泡记录标记，并且超分辨率层含有一种或多种选自氮，氧， 碳和硼。

公开(公告)号：US07906195B2

公开(公告)日：2011-03-15

申请号：US11949927

申请日：2007-12-04

申请人： Byung-Ki Cheong ,  Taek Sung Lee ,  Hyun Seok Lee ,  Jeung-Hyun Jeong ,  Suyoun Lee ,  Won Mok Kim

发明人： Byung-Ki Cheong ,  Taek Sung Lee ,  Hyun Seok Lee ,  Jeung-Hyun Jeong ,  Suyoun Lee ,  Won Mok Kim

IPC分类号： B32B3/02

CPC分类号： G11B7/24 ,  G02F1/3523 ,  G11B7/252 ,  Y10T428/21 ,  Y10T428/26

摘要： A super-resolution material for recording and reproducing optical information, comprises a semiconductor material which has a transmittance that increases with an increasing intensity of the incident radiation, and one or more elements selected from the group consisting of nitrogen (N), oxygen (O), carbon (C) and boron (B).

摘要翻译： 一种用于记录和再现光学信息的超分辨率材料，包括具有随着入射辐射强度增加而增加的透射率的半导体材料，以及一种或多种选自氮（N），氧（O ），碳（C）和硼（B）。