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公开(公告)号:US20240341653A1
公开(公告)日:2024-10-17
申请号:US18420789
申请日:2024-01-24
Applicant: Industrial Technology Research Institute
Inventor: Min-Hsiung Liang , Chien-Hsun Chu , Kuan-Chu Wu , Wan-Chen Yang , Jui-Chang Chuang , Chen-Tsai Yang , Heng-Yin Chen , Hung-Hsien Ko
IPC: A61B5/263
CPC classification number: A61B5/263 , A61B2562/164 , A61B2562/18
Abstract: A flexible electronic device includes a first encapsulation layer and a sensing structure. The sensing structure is disposed on the first encapsulation layer and includes a substrate, a plurality of first sensing layer, a plurality of second sensing layer, a first groove and a second groove. The substrate includes a main body, a plurality of first branches and a plurality of second branches. The main body has a first side and a second side opposite to each other. The first branches connect the first side. The second branches connect the second side. The first sensing layers are disposed on the first branches. The second sensing layers are disposed on the second branches. The first groove is disposed between the first branches. The second groove is disposed between the second branches.
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公开(公告)号:US20190140210A1
公开(公告)日:2019-05-09
申请号:US15856059
申请日:2017-12-28
Inventor: Ting-Hsun Cheng , Chih-Chia Chang , Kai-Ming Chang , Jui-Chang Chuang
IPC: H01L51/52
Abstract: A protective structure includes a substrate, a hard coating layer and an auxiliary layer. The auxiliary layer is disposed on the substrate. The hard coating layer is disposed on the auxiliary layer. The auxiliary layer is disposed between the substrate and the hard coating layer. The Young's modulus of the auxiliary layer is greater than the Young's modulus of the hard coating layer, and the Young's modulus of the hard coating layer is greater than the Young's modulus of the substrate.
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公开(公告)号:US11007751B2
公开(公告)日:2021-05-18
申请号:US16729520
申请日:2019-12-30
Inventor: Jui-Chang Chuang , Chen-Chu Tsai , Kai-Ming Chang , Chih-Chia Chang , Ting-Hsun Cheng
Abstract: An impact resistant structure for an electronic component. The impact resistant structure includes a resistance stack layer and a damping laminate. The resistance stack layer is disposed on a first surface of the electronic component, a thickness of the resistance stack layer is less than 10 μm, and a Young's modulus of the resistance stack layer is between 40 GPa and 150 GPa. The damping laminate is disposed on a second surface of the electronic component. The second surface of the electronic component is opposite to the first surface. The damping laminate includes a soft film and a support film, where the support film is disposed between the soft film and the electronic component.
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公开(公告)号:US20200052243A1
公开(公告)日:2020-02-13
申请号:US16379815
申请日:2019-04-10
Inventor: Yung-Hui Yeh , Jui-Chang Chuang , Li-Ching Wang , Cheng-Yueh Chang , Chyi-Ming Leu , Shih-Ming Chen
Abstract: Provided is a protective structure including an auxiliary layer and a hard coating layer. The auxiliary layer has a first surface and a second surface opposite to the first surface. The hard coating layer is located on the second surface of the auxiliary layer. The Young's modulus of the auxiliary layer is gradually increased from the second surface to the first surface. An electronic device with the same is also provided.
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公开(公告)号:US20190057948A1
公开(公告)日:2019-02-21
申请号:US15911183
申请日:2018-03-05
Inventor: Chen-Tsai Yang , Ko-Chin Yang , Jui-Chang Chuang , Yen-Ting Wu , Chia-Hua Lu
IPC: H01L23/00 , H01L21/56 , H01L23/31 , H01L23/538 , H01L25/065
Abstract: A chip package structure includes a chip package layer and at least one conductive structure layer. The chip package layer includes at least one chip and an encapsulant. The chip has an upper surface, and the encapsulant is used to encapsulate the chip and expose the upper surface. The conductive structure layer includes a plurality of first conductive pillars and a plurality of second conductive pillars. The first conductive pillars are disposed on the upper surface, the second conductive pillars are disposed on the upper surface and located between an edge of the upper surface and the first conductive pillars. A density of the second conductive pillars along an extending direction of the edge is greater than or equal to 1.2 times of a density of the first conductive pillars along the extending direction of the edge.
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公开(公告)号:US09860976B1
公开(公告)日:2018-01-02
申请号:US15394827
申请日:2016-12-30
Applicant: Industrial Technology Research Institute
Inventor: Sheng-Po Wang , Chih-Chia Chang , Chao-Jen Wang , Jui-Chang Chuang
CPC classification number: H05K1/0283 , H05K2201/09063 , H05K2201/09081 , H05K2201/09254 , H05K2201/09263 , H05K2201/10106 , H05K2201/10128 , H05K2201/10151
Abstract: According to an embodiment of the present disclosure, a flexible electronic device may include a unit structure including a substrate unit and a wiring structure. The substrate unit has slits to divide connecting portions between respective ends of two slits and wiring regions arranged outwardly from at least one unit center sequentially. The wiring structure is disposed on the substrate unit and includes wirings distributed in the wiring regions. Each wiring includes circumferential portions and radial portions connected between the circumferential portions. The radial portion connected to a first end of each circumferential portion extends toward the unit center from the first end. Each circumferential portion includes a first section and a second section. The first section is closer to the first end and has greater anti-stretching ability than the second section.
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公开(公告)号:US20170179434A1
公开(公告)日:2017-06-22
申请号:US15377980
申请日:2016-12-13
Applicant: Industrial Technology Research Institute
Inventor: Chih-Chia Chang , Cheng-Chung Lee , Kuang-Jung Chen , Kai-Ming Chang , Jui-Chang Chuang
CPC classification number: H01L51/5256 , B32B3/00 , B32B7/12 , B32B9/005 , B32B9/045 , B32B17/00 , B32B27/06 , B32B27/08 , B32B27/281 , B32B27/283 , B32B27/285 , B32B27/286 , B32B27/288 , B32B27/308 , B32B27/32 , B32B27/34 , B32B27/36 , B32B27/365 , B32B27/40 , B32B2255/10 , B32B2255/20 , B32B2255/26 , B32B2255/28 , B32B2307/41 , B32B2307/412 , B32B2307/50 , B32B2307/546 , B32B2307/558 , B32B2307/584 , B32B2307/71 , B32B2307/75 , B32B2457/00 , B32B2571/00 , H01L27/322 , H01L27/3272 , H01L51/004 , H01L51/5237 , H01L51/5284
Abstract: A protective structure includes an impact resistant structure and an anti-scratch structure. The impact resistant structure includes a plurality of buffer structures and a plurality of filling structures located around the buffer structures. The anti-scratch structure is located over the impact resistant structure. The anti-scratch structure includes a hard coat layer which covers the impact resistant structure, and a surface anti-scratch layer which covers the hard coat layer.
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公开(公告)号:US20240004474A1
公开(公告)日:2024-01-04
申请号:US18343760
申请日:2023-06-29
Applicant: Industrial Technology Research Institute
Inventor: Chen-Tsai Yang , Heng-Yin Chen , Wan-Chen Yang , Jui-Chang Chuang , Hung-Hsien Ko , Min-Hsiung Liang , Chih-Cheng Cheng
CPC classification number: G06F3/016 , H10N30/20 , H10N30/88 , H10N30/802
Abstract: A film deformation element includes a first stack and a second stack. The first stack includes a first passivation layer, a first substrate, a first metal layer and a first dielectric layer. The first substrate is disposed on the first passivation layer. The first metal layer is disposed on the first substrate. The first dielectric layer is disposed on the first metal layer. The second stack is bonded to the first stack, to form a sealing space. The second stack includes a second passivation layer, a second substrate, a second metal layer and a second dielectric layer. The second dielectric layer is disposed on and faces the first dielectric layer. The second metal layer is disposed on the second dielectric layer. The second substrate is disposed on the second metal layer. The second passivation layer is disposed on the second substrate.
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公开(公告)号:US20200211984A1
公开(公告)日:2020-07-02
申请号:US16404765
申请日:2019-05-07
Applicant: Industrial Technology Research Institute
Inventor: Jui-Chang Chuang , Chen-Tsai Yang , Wei-Yuan Cheng
IPC: H01L23/00 , H01L23/31 , H01L23/538 , H01L21/48 , H01L21/56
Abstract: An electronic device package structure and a manufacturing method thereof are provided. The electronic device package structure includes a first electronic device layer, a second electronic device layer, and a filling layer disposed between the first electronic device layer and the second electronic device layer, wherein the Young's modulus of the second electronic device layer is less than or equal to the Young's modulus of the first electronic device layer, and the Young's modulus of the filling layer is less than the Young's modulus of the second electronic device layer, and the ratio of the Young's modulus of the first electronic device layer to the Young's modulus of the filling layer is 10 to 1900 and the ratio of the Young's modulus of the second electronic device layer to the Young's modulus of the filling layer is 7.6 to 1300.
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公开(公告)号:US09837635B2
公开(公告)日:2017-12-05
申请号:US15377980
申请日:2016-12-13
Applicant: Industrial Technology Research Institute
Inventor: Chih-Chia Chang , Cheng-Chung Lee , Kuang-Jung Chen , Kai-Ming Chang , Jui-Chang Chuang
CPC classification number: H01L51/5256 , B32B3/00 , B32B7/12 , B32B9/005 , B32B9/045 , B32B17/00 , B32B27/06 , B32B27/08 , B32B27/281 , B32B27/283 , B32B27/285 , B32B27/286 , B32B27/288 , B32B27/308 , B32B27/32 , B32B27/34 , B32B27/36 , B32B27/365 , B32B27/40 , B32B2255/10 , B32B2255/20 , B32B2255/26 , B32B2255/28 , B32B2307/41 , B32B2307/412 , B32B2307/50 , B32B2307/546 , B32B2307/558 , B32B2307/584 , B32B2307/71 , B32B2307/75 , B32B2457/00 , B32B2571/00 , H01L27/322 , H01L27/3272 , H01L51/004 , H01L51/5237 , H01L51/5284
Abstract: A protective structure includes an impact resistant structure and an anti-scratch structure. The impact resistant structure includes a plurality of buffer structures and a plurality of filling structures located around the buffer structures. The anti-scratch structure is located over the impact resistant structure. The anti-scratch structure includes a hard coat layer which covers the impact resistant structure, and a surface anti-scratch layer which covers the hard coat layer.
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