-
公开(公告)号：US20180088042A1
公开(公告)日：2018-03-29
申请号：US15716598
申请日：2017-09-27
发明人： Naveen Goud GANAGONA , Moriz JELINEK , Helmut OEFNER , Hans-Joachim SCHULZE , Werner SCHUSTEREDER
IPC分类号： G01N21/3563
CPC分类号： G01N21/3563 , G01N2021/3568 , G01N2021/3572 , G01N2021/3595
摘要： A method of determining the carbon content in a silicon sample may include: generating electrically active polyatomic complexes within the silicon sample. Each polyatomic complex may include at least one carbon atom. The method may further include: determining a quantity indicative of the content of the generated polyatomic complexes in the silicon sample, and determining the carbon content in the silicon sample from the determined quantity.
-
2.发明申请SEMICONDUCTOR DEVICE, SILICON WAFER AND METHOD OF MANUFACTURING A SILICON WAFER 审中-公开半导体器件，硅波和制造硅波的方法公开(公告)号：US20170062568A1
公开(公告)日：2017-03-02
申请号：US15247200
申请日：2016-08-25
IPC分类号： H01L29/10 , H01L29/78 , C30B30/04 , H01L29/861 , C30B15/04 , C30B29/06 , H01L29/167 , H01L29/739
CPC分类号： H01L29/1095 , C30B15/04 , C30B29/06 , C30B30/04 , H01L29/167 , H01L29/36 , H01L29/66136 , H01L29/6634 , H01L29/7393 , H01L29/7395 , H01L29/7802 , H01L29/861
摘要： A semiconductor device is provided that includes a silicon semiconductor body having a drift or base zone of net n-type doping. An n-type doping is partially compensated by 10% to 80% with p-type dopants. A net n-type doping concentration in the drift or base zone is in a range from 1×1013 cm−3 to 1×1015 cm−3. A portion of 5% to 75% of the n-type doping is made up of hydrogen related donors.
摘要翻译： 提供一种半导体器件，其包括具有净n型掺杂的漂移或基极区的硅半导体本体。 对于p型掺杂剂，n型掺杂部分地补偿了10％至80％。 漂移或基区中的净n型掺杂浓度范围为1×1013cm-3至1×1015cm-3。 5％至75％的n型掺杂的一部分由与氢有关的供体组成。
-
公开(公告)号：US20200161424A1
公开(公告)日：2020-05-21
申请号：US16773225
申请日：2020-01-27
IPC分类号： H01L29/10 , H01L29/861 , H01L29/78 , H01L29/739 , H01L29/167 , C30B30/04 , C30B29/06 , C30B15/04 , H01L29/66 , H01L29/36
摘要： A method of manufacturing is provided that includes providing an n-type silicon wafer, the n-type silicon wafer including n-type dopants partially compensated 20% to 80% by p-type dopants, where a net n-type doping concentration of the n-type silicon wafer is in a range from 1×1013 cm−3 to 1×1015 cm−3; forming hydrogen related donors in the n-type silicon wafer by irradiating the n-type silicon wafer with protons; and annealing the n-type silicon wafer after forming the hydrogen related donors.
-
公开(公告)号：US20180097064A1
公开(公告)日：2018-04-05
申请号：US15820770
申请日：2017-11-22
IPC分类号： H01L29/10 , H01L29/861 , C30B29/06 , C30B30/04 , H01L29/739 , H01L29/78 , C30B15/04 , H01L29/167
摘要： A method of manufacturing a silicon wafer is provided that includes extracting an n-type silicon ingot over an extraction time period from the a silicon melt comprising n-type dopants; adding p-type dopants to the silicon melt over at least part of the extraction time period, thereby compensating an n-type doping in the n-type silicon ingot by 10% to 80%; slicing the silicon ingot; forming hydrogen related donors in the silicon wafer by irradiating the silicon wafer with protons; and annealing the silicon wafer subsequent to the forming of the hydrogen related donors in the silicon wafer.
-
-
-
搜索结果
4 条记录 (耗时 0.011 秒)
