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    Method of dicing a wafer and semiconductor chip
    2.
    发明授权
    Method of dicing a wafer and semiconductor chip 有权
    切割晶片和半导体芯片的方法

    公开(公告)号：US09570352B2

    公开(公告)日：2017-02-14

    申请号：US14964603

    申请日：2015-12-10

    Applicant: Infineon Technologies AG

    Inventor： Markus Brunnbauer ,  Bernhard Drummer ,  Korbinian Kaspar ,  Gunther Mackh

    IPC: H01L29/06 ,  H01L21/78

    CPC classification number: H01L21/78 ,  H01L21/268 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/6836 ,  H01L29/0657 ,  H01L2221/68327 ,  H01L2221/6834

    Abstract: A method of dicing a wafer may include forming a plurality of active regions in a wafer, each active region including at least one electronic component, the active regions extending from a first surface of the wafer into the wafer by a height and being separated by separation regions, the separation regions being free from metal, forming at least one trench in the wafer by plasma etching in at least one separation region from the first surface of the wafer. The at least one trench is extending into the wafer farther than the plurality of active regions. The method may further include processing a remaining portion of the wafer in the separation region to separate the wafer into individual chips.

    Abstract translation: 切割晶片的方法可以包括在晶片中形成多个有源区，每个有源区包括至少一个电子部件，所述有源区从晶片的第一表面延伸到晶片高度并通过分离分离 区域，所述分离区域不含金属，通过在与所述晶片的第一表面的至少一个分离区域中的等离子体蚀刻在所述晶片中形成至少一个沟槽。 所述至少一个沟槽比所述多个有源区域延伸进入所述晶片。 该方法还可以包括在分离区域中处理晶片的剩余部分以将晶片分离成单独的芯片。

    METHOD OF PROCESSING A SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR CHIP
    3.
    发明申请
    METHOD OF PROCESSING A SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR CHIP 有权
    加工半导体衬底和半导体芯片的方法

    公开(公告)号：US20160211179A1

    公开(公告)日：2016-07-21

    申请号：US15000100

    申请日：2016-01-19

    Applicant: Infineon Technologies AG

    Inventor： Franco Mariani ,  Korbinian Kaspar

    IPC: H01L21/78 ,  H01L21/304 ,  H01L23/00

    CPC classification number: H01L21/78 ,  H01L21/304 ,  H01L21/67092 ,  H01L21/67132 ,  H01L21/6836 ,  H01L24/27 ,  H01L24/29 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68386 ,  H01L2224/2902

    Abstract: A method of processing a semiconductor substrate is provided. The method may include forming a film over a first side of a semiconductor substrate, forming at least one separation region in the semiconductor substrate between a first region and a second region of the semiconductor substrate, arranging the semiconductor substrate on a breaking device, wherein the breaking device comprises a breaking edge, and wherein the semiconductor substrate is arranged with the film facing the breaking device and in at least one alignment position with the at least one separation region aligned with the breaking edge, and forcing the semiconductor substrate to bend the first region with respect to the second region over the breaking edge until the film separates between the breaking edge and the at least one separation region.

    Abstract translation: 提供一种处理半导体衬底的方法。 该方法可以包括在半导体衬底的第一侧上形成膜，在半导体衬底的第一区域和第二区域之间的半导体衬底中形成至少一个分离区域，将半导体衬底布置在破坏器件上，其中 断开装置包括断裂边缘，并且其中半导体基板布置成使膜面向断开装置，并且至少一个对准位置与至少一个分离区域与断裂边缘对准，并迫使半导体基板弯曲第一 区域相对于断裂边缘上的第二区域直到膜在断裂边缘和至少一个分离区域之间分离。

    Methods for forming a semiconductor device and semiconductor devices
    4.
    发明授权
    Methods for forming a semiconductor device and semiconductor devices 有权

    公开(公告)号：US10727126B2

    公开(公告)日：2020-07-28

    申请号：US15604295

    申请日：2017-05-24

    Applicant: Infineon Technologies AG

    Inventor： Korbinian Kaspar ,  Franco Mariani

    IPC: H01L21/78 ,  H01L21/268 ,  H01L23/544

    Abstract: A method for forming a semiconductor device includes forming a laser marking buried within a semiconductor substrate and thinning the semiconductor substrate from a backside of the semiconductor substrate. For example, a semiconductor device includes a semiconductor substrate located in a semiconductor package. A laser marking is buried within the semiconductor substrate. For example, another semiconductor device includes a semiconductor substrate. A laser marking is located at a backside surface of the semiconductor substrate. Further, a portion of the backside surface located adjacent to the laser marking is free of recast material.

    Methods for Forming a Semiconductor Device and Semiconductor Devices
    6.
    发明申请
    Methods for Forming a Semiconductor Device and Semiconductor Devices 审中-公开

    公开(公告)号：US20170345717A1

    公开(公告)日：2017-11-30

    申请号：US15604295

    申请日：2017-05-24

    Applicant: Infineon Technologies AG

    Inventor： Korbinian Kaspar ,  Franco Mariani

    IPC: H01L21/78 ,  H01L21/268 ,  H01L23/544

    Abstract: A method for forming a semiconductor device includes forming a laser marking buried within a semiconductor substrate and thinning the semiconductor substrate from a backside of the semiconductor substrate. For example, a semiconductor device includes a semiconductor substrate located in a semiconductor package. A laser marking is buried within the semiconductor substrate. For example, another semiconductor device includes a semiconductor substrate. A laser marking is located at a backside surface of the semiconductor substrate. Further, a portion of the backside surface located adjacent to the laser marking is free of recast material.

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