公开(公告)号：US09620457B2

公开(公告)日：2017-04-11

申请号：US14090570

申请日：2013-11-26

Applicant: Infineon Technologies AG

Inventor： Ulrich Wachter ,  Eva Wagner ,  Gottfried Beer

IPC: H01L23/544 ,  H01L21/78 ,  H01L23/31 ,  H01L21/56 ,  H01L23/00 ,  B23K26/40 ,  B23K26/402 ,  B23K26/364 ,  B23K103/08 ,  B23K103/16 ,  B23K103/00 ,  B23K103/10 ,  B23K103/12 ,  B23K103/14 ,  B23K103/18

CPC classification number: H01L23/544 ,  B23K26/364 ,  B23K26/40 ,  B23K26/402 ,  B23K2103/08 ,  B23K2103/10 ,  B23K2103/12 ,  B23K2103/14 ,  B23K2103/172 ,  B23K2103/26 ,  B23K2103/30 ,  B23K2103/50 ,  H01L21/561 ,  H01L21/568 ,  H01L21/78 ,  H01L23/3114 ,  H01L24/19 ,  H01L24/96 ,  H01L24/97 ,  H01L2223/54433 ,  H01L2223/6677 ,  H01L2224/12105 ,  H01L2924/12042 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/3025 ,  H01L2924/00

Abstract: A method of manufacturing a semiconductor device package includes encapsulating at least partially a plurality of semiconductor chips with encapsulating material to form an encapsulation body. The encapsulation body has a first main surface and a second main surface. At least one of a metal layer and an organic layer is formed over the first main surface of the encapsulation body. At least one trace of the at least one of the metal layer and the organic layer is removed by laser ablation. The encapsulation body is then separated into a plurality of semiconductor device packages along the at least one trace.

公开(公告)号：US20160211227A1

公开(公告)日：2016-07-21

申请号：US14997946

申请日：2016-01-18

Applicant: Infineon Technologies AG

Inventor： Eva Wagner ,  Korbinian Kaspar ,  Adolf Koller

IPC: H01L23/00 ,  H01L23/31

CPC classification number: H01L23/562 ,  H01L23/3178 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A device includes a semiconductor chip including a dicing edge. The device further includes an active structure arranged in a semiconductor material of the semiconductor chip, and a protection structure arranged between the dicing edge and the active structure.

Abstract translation: 一种器件包括具有切割边缘的半导体芯片。 该器件还包括布置在半导体芯片的半导体材料中的有源结构，以及布置在切割边缘和活动结构之间的保护结构。

公开(公告)号：US20150145149A1

公开(公告)日：2015-05-28

申请号：US14090570

申请日：2013-11-26

Applicant: Infineon Technologies AG

Inventor： Ulrich Wachter ,  Eva Wagner ,  Gottfried Beer

IPC: H01L23/544 ,  H01L21/78 ,  H01L23/31 ,  H01L21/56

CPC classification number: H01L23/544 ,  B23K26/364 ,  B23K26/40 ,  B23K26/402 ,  B23K2103/08 ,  B23K2103/10 ,  B23K2103/12 ,  B23K2103/14 ,  B23K2103/172 ,  B23K2103/26 ,  B23K2103/30 ,  B23K2103/50 ,  H01L21/561 ,  H01L21/568 ,  H01L21/78 ,  H01L23/3114 ,  H01L24/19 ,  H01L24/96 ,  H01L24/97 ,  H01L2223/54433 ,  H01L2223/6677 ,  H01L2224/12105 ,  H01L2924/12042 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/3025 ,  H01L2924/00

Abstract: A method of manufacturing a semiconductor device package includes encapsulating at least partially a plurality of semiconductor chips with encapsulating material to form an encapsulation body. The encapsulation body has a first main surface and a second main surface. At least one of a metal layer and an organic layer is formed over the first main surface of the encapsulation body. At least one trace of the at least one of the metal layer and the organic layer is removed by laser ablation. The encapsulation body is then separated into a plurality of semiconductor device packages along the at least one trace.

Abstract translation: 一种制造半导体器件封装的方法包括至少部分地用封装材料封装多个半导体芯片以形成封装体。 封装体具有第一主表面和第二主表面。 金属层和有机层中的至少一个形成在封装体的第一主表面上。 通过激光烧蚀去除金属层和有机层中的至少一个的至少一个迹线。 然后将封装体沿着至少一个迹线分离成多个半导体器件封装。