-
公开(公告)号：US20170194272A1
公开(公告)日：2017-07-06
申请号：US15461500
申请日：2017-03-17
IPC分类号： H01L23/00
CPC分类号： H01L24/03 , H01L21/02203 , H01L21/02513 , H01L21/76259 , H01L23/53238 , H01L24/05 , H01L2224/0331 , H01L2224/0345 , H01L2224/03505 , H01L2224/03602 , H01L2224/03616 , H01L2224/0384 , H01L2224/05541 , H01L2224/05551 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48463 , H01L2924/3511 , H01L2924/35121
摘要： A method of manufacturing a layer structure includes: forming a first layer over a substrate; planarizing the first layer to form a planarized surface of the first layer; and forming a second layer over the planarized surface; wherein a porosity of the first layer is greater than a porosity of the substrate and greater than a porosity of the second layer; wherein the second layer is formed by physical vapor deposition; and wherein the first layer and the second layer are formed from the same solid material.
-
公开(公告)号：US20170154767A1
公开(公告)日：2017-06-01
申请号：US15347835
申请日：2016-11-10
IPC分类号： H01L21/027 , H01L21/306 , H01L21/3065 , H01L21/308
CPC分类号： H01L21/0274 , H01L21/02107 , H01L21/02203 , H01L21/0271 , H01L21/30604 , H01L21/3065 , H01L21/3085 , H01L21/3086 , H01L21/31058 , H01L21/32139 , H01L21/47 , H01L21/70
摘要： According to various embodiments, a method of processing a substrate may include: disposing a viscous material over a substrate including at least one topography feature extending into the substrate to form a protection layer over the substrate; adjusting a viscosity of the viscous material during a contacting period of the viscous material and the substrate to stabilize a spatial distribution of the viscous material as disposed; processing the substrate using the protection layer as mask; and removing the protection layer after processing the substrate.
-
搜索结果
2 条记录 (耗时 0.013 秒)
