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    Method for Manufacturing a Sensor Device with a Buried Deep Trench Structure and Sensor Device
    1.
    发明申请
    Method for Manufacturing a Sensor Device with a Buried Deep Trench Structure and Sensor Device 有权

    公开(公告)号：US20210167117A1

    公开(公告)日：2021-06-03

    申请号：US17104568

    申请日：2020-11-25

    Applicant: Infineon Technologies Dresden GmbH & Co. KG

    Inventor： Magali Glemet ,  Boris Binder ,  Henning Feick ,  Dirk Offenberg

    IPC: H01L27/146

    Abstract: A sensor device includes: a semiconductor substrate having a sensing region which extends vertically below a main surface region of the semiconductor substrate into the substrate; a semiconductor capping layer that extends vertically below the main surface region into the substrate; a buried deep trench structure that extends vertically below the capping layer into the substrate and laterally relative to the sensing region, the buried deep trench structure including a doped semiconductor layer that extends from a surface region of the buried deep trench structure into the substrate; a trench doping region that extends from the doped semiconductor layer of the buried deep trench structure into the substrate; and electronic circuitry for the sensing region in a capping region of the substrate vertically above the buried deep trench structure. Methods of manufacturing the sensor device are also provided.

    SENSOR STRUCTURES, SYSTEMS AND METHODS WITH IMPROVED INTEGRATION AND OPTIMIZED FOOTPRINT
    2.
    发明申请
    SENSOR STRUCTURES, SYSTEMS AND METHODS WITH IMPROVED INTEGRATION AND OPTIMIZED FOOTPRINT 有权
    传感器结构，系统和方法与改进的集成和优化的FOOTPRINT

    公开(公告)号：US20150210533A1

    公开(公告)日：2015-07-30

    申请号：US14163205

    申请日：2014-01-24

    Applicant: Infineon Technologies Dresden GmbH

    Inventor： Thoralf Kautzsch ,  Heiko Fröhlich ,  Mirko Vogt ,  Maik Stegemann ,  Andre Röth ,  Bernhard Winkler ,  Boris Binder

    IPC: B81B3/00 ,  G01L9/00

    CPC classification number: G01L9/0072 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00158 ,  G01L9/0041 ,  G01L9/0073

    Abstract: Embodiments relate to sensors and more particularly to structures for and methods of forming sensors that are easier to manufacture as integrated components and provide improved deflection of a sensor membrane, lamella or other movable element. In embodiments, a sensor comprises a support structure for a lamella, membrane or other movable element. The support structure comprises a plurality of support elements that hold or carry the movable element. The support elements can comprise individual points or feet-like elements, rather than a conventional interconnected frame, that enable improved motion of the movable element, easier removal of a sacrificial layer between the movable element and substrate during manufacture and a more favorable deflection ratio, among other benefits.

    Abstract translation: 实施例涉及传感器，更具体地涉及形成传感器的结构和方法，所述传感器更容易制造为集成部件并提供传感器膜，薄片或其它可移动元件的改进偏转。 在实施例中，传感器包括用于薄片，膜或其它可移动元件的支撑结构。 支撑结构包括保持或承载可移动元件的多个支撑元件。 支撑元件可以包括单个点或脚状元件，而不是传统的互连框架，其能够改善可移动元件的运动，在制造期间更容易地去除可移动元件和基板之间的牺牲层，并且具有更有利的偏移比， 其他好处。

    Wafer, a method for processing a wafer, and a method for processing a carrier
    4.
    发明授权
    Wafer, a method for processing a wafer, and a method for processing a carrier 有权
    晶片，晶片的处理方法以及载体的处理方法

    公开(公告)号：US09236241B2

    公开(公告)日：2016-01-12

    申请号：US14269260

    申请日：2014-05-05

    Applicant: Infineon Technologies Dresden GmbH

    Inventor： Thoralf Kautzsch ,  Alessia Scire ,  Steffen Bieselt ,  Uwe Rudolph ,  Marco Mueller ,  Boris Binder

    IPC: H01L21/302 ,  H01L21/02

    CPC classification number: H01L21/02002 ,  H01L21/02005 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/3083 ,  H01L21/764 ,  H01L21/7806 ,  Y10T156/1057 ,  Y10T156/11 ,  Y10T428/13

    Abstract: According to various embodiments, a method for processing a wafer may include: forming at least one hollow chamber and a support structure within the wafer, the at least one hollow chamber defining a cap region of the carrier located above the at least one hollow chamber and a bottom region of the carrier located below the at least one hollow chamber and an edge region surrounding the cap region of the carrier, wherein a surface area of the cap region is greater than a surface area of the edge region, and wherein the cap region is connected to the bottom region by the support structure; removing the cap region in one piece from the bottom region and the edge region.

    Abstract translation: 根据各种实施例，用于处理晶片的方法可以包括：在晶片内形成至少一个中空室和支撑结构，所述至少一个中空室限定位于至少一个中空室上方的载体的盖区域， 位于所述至少一个中空室下方的所述载体的底部区域和围绕所述载体的所述盖区域的边缘区域，其中所述盖区域的表面积大于所述边缘区域的表面积，并且其中所述盖区域 通过支撑结构连接到底部区域; 从底部区域和边缘区域去除一个部分的帽区域。

    Method for manufacturing a sensor device with a buried deep trench structure and sensor device
    7.
    发明授权
    Method for manufacturing a sensor device with a buried deep trench structure and sensor device 有权

    公开(公告)号：US11869919B2

    公开(公告)日：2024-01-09

    申请号：US17104568

    申请日：2020-11-25

    Applicant: Infineon Technologies Dresden GmbH & Co. KG

    Inventor： Magali Glemet ,  Boris Binder ,  Henning Feick ,  Dirk Offenberg

    IPC: H01L27/14 ,  H01L27/146

    CPC classification number: H01L27/14687 ,  H01L27/14632

    Abstract: A sensor device includes: a semiconductor substrate having a sensing region which extends vertically below a main surface region of the semiconductor substrate into the substrate; a semiconductor capping layer that extends vertically below the main surface region into the substrate; a buried deep trench structure that extends vertically below the capping layer into the substrate and laterally relative to the sensing region, the buried deep trench structure including a doped semiconductor layer that extends from a surface region of the buried deep trench structure into the substrate; a trench doping region that extends from the doped semiconductor layer of the buried deep trench structure into the substrate; and electronic circuitry for the sensing region in a capping region of the substrate vertically above the buried deep trench structure. Methods of manufacturing the sensor device are also provided.

    Sensor structures, systems and methods with improved integration and optimized footprint
    9.
    发明授权
    Sensor structures, systems and methods with improved integration and optimized footprint 有权
    传感器结构，系统和方法，具有改进的集成和优化的占位面积

    公开(公告)号：US09546923B2

    公开(公告)日：2017-01-17

    申请号：US14163205

    申请日：2014-01-24

    Applicant: Infineon Technologies Dresden GmbH

    Inventor： Thoralf Kautzsch ,  Heiko Fröhlich ,  Mirko Vogt ,  Maik Stegemann ,  Andre Röth ,  Bernhard Winkler ,  Boris Binder

    IPC: G01L9/00 ,  B81C1/00

    CPC classification number: G01L9/0072 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00158 ,  G01L9/0041 ,  G01L9/0073

    Abstract: Embodiments relate to sensors and more particularly to structures for and methods of forming sensors that are easier to manufacture as integrated components and provide improved deflection of a sensor membrane, lamella or other movable element. In embodiments, a sensor comprises a support structure for a lamella, membrane or other movable element. The support structure comprises a plurality of support elements that hold or carry the movable element. The support elements can comprise individual points or feet-like elements, rather than a conventional interconnected frame, that enable improved motion of the movable element, easier removal of a sacrificial layer between the movable element and substrate during manufacture and a more favorable deflection ratio, among other benefits.

    Abstract translation: 实施例涉及传感器，更具体地涉及形成传感器的结构和方法，所述传感器更容易制造为集成部件并提供传感器膜，薄片或其它可移动元件的改进偏转。 在实施例中，传感器包括用于薄片，膜或其它可移动元件的支撑结构。 支撑结构包括保持或承载可移动元件的多个支撑元件。 支撑元件可以包括单个点或脚状元件，而不是传统的互连框架，其能够改善可移动元件的运动，在制造期间更容易地去除可移动元件和基板之间的牺牲层，并且具有更有利的偏移比， 其他好处。

    Micromechanical system and method for manufacturing a micromechanical system
    10.
    发明授权
    Micromechanical system and method for manufacturing a micromechanical system 有权
    微机械系统及其制造方法

    公开(公告)号：US09382111B2

    公开(公告)日：2016-07-05

    申请号：US14696757

    申请日：2015-04-27

    Applicant: Infineon Technologies Dresden GmbH

    Inventor： Thoralf Kautzsch ,  Heiko Froehlich ,  Mirko Vogt ,  Maik Stegemann ,  Boris Binder ,  Steffen Bieselt

    IPC: H01L21/00 ,  B81C1/00 ,  B81B7/00

    CPC classification number: B81C1/00246 ,  B81B7/008 ,  B81B2201/0264 ,  B81B2203/0315 ,  B81C2203/0721 ,  B81C2203/0735 ,  G01L9/0073

    Abstract: A method for manufacturing a micromechanical system is shown. The method comprises the steps of forming in a front end of line (FEOL) process a transistor in a transistor region. After the FEOL process, a protective layer is deposited in the transistor region, wherein the protective layer comprises an isolating material, e.g. an oxide. A structured sacrificial layer is formed at least in a region which is not the transistor region. Furthermore, a functional layer is formed which is at least partially covering the structured sacrificial layer. After the functional layer is formed removing the sacrificial layer in order to create a cavity between the functional layer and a surface, where the sacrificial layer was deposited on. The protective layer protects the transistor from being damaged especially during etching processes in further processing steps in MOL (middle of line) and BEOL (back end of line) processes. Using an oxide for said protective layer is advantageous, since the same oxide may be used as the basis for a metallization process in the BEOL. Therefore, the protective layer may remain over the transistor and does not need to be removed like the sacrificial layer, which is typically used as a protection for the transistor. Therefore, the protective layer becomes part of the oxide coverage, which is applied before the BEOL process.

    Abstract translation: 示出了用于制造微机械系统的方法。 该方法包括以下步骤：在线的前端（FEOL）处理晶体管区域中的晶体管。 在FEOL处理之后，保护层沉积在晶体管区域中，其中保护层包括隔离材料，例如， 氧化物。 至少在不是晶体管区域的区域中形成结构化牺牲层。 此外，形成至少部分地覆盖结构化牺牲层的功能层。 在形成功能层之后，去除牺牲层，以便在功能层和沉积有牺牲层的表面之间形成空腔。 保护层保护晶体管不被损坏，特别是在MOL（中间线）和BEOL（后端）工艺的进一步处理步骤中的蚀刻工艺期间。 使用用于所述保护层的氧化物是有利的，因为可以使用相同的氧化物作为BEOL中的金属化工艺的基础。 因此，保护​​层可以保留在晶体管上方，并且不需要像牺牲层一样去除，其通常用作晶体管的保护。 因此，保护​​层成为在BEOL工艺之前施加的氧化物覆盖的一部分。

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