公开(公告)号：US20240102194A1

公开(公告)日：2024-03-28

申请号：US18231099

申请日：2023-08-07

Applicant: YUAN ZE UNIVERSITY ,  Innolux Corporation

Inventor： Cheng-EN HO ,  Yu-Lian CHEN ,  Cheng-Chi WANG ,  Yu-Jen CHANG ,  Yung-Sheng LU ,  Cheng-Yu LEE ,  Yu-Ming LIN

IPC: C25D5/18 ,  C25D5/48 ,  C25D17/02

CPC classification number: C25D5/18 ,  C25D5/48 ,  C25D17/02

Abstract: A plating system and a method thereof are disclosed. The plating system performs a N-stage plating drilling filling process in which a M-th stage plating drilling filling process with a M-th current density is performed on a hole of a substrate for a M-th plating time to form a M-th plating layer on the to-be-plated layer, wherein N is a positive integer equal to or greater than 3, and M is a positive integer positive integer in a range of 1 to N. Therefore, the technical effect of providing a higher drilling filling rate than conventional plating filling technology under a condition that a total thickness of plating layers is fixed can be achieved.

公开(公告)号：US20240038550A1

公开(公告)日：2024-02-01

申请号：US17969703

申请日：2022-10-20

Applicant: InnoLux Corporation

Inventor： Chin-Lung TING ,  Cheng-Chi WANG ,  Yu-Jen CHANG ,  Ju-Li WANG

IPC: H01L21/48 ,  H01L23/00 ,  H01L23/498 ,  C23C14/34 ,  C23C14/58 ,  C23C28/02 ,  C23C28/00 ,  C25D7/12

CPC classification number: H01L21/486 ,  H01L24/13 ,  H01L24/11 ,  H01L23/49838 ,  H01L23/49827 ,  C23C14/34 ,  C23C14/5873 ,  C23C28/023 ,  C23C28/322 ,  C25D7/123 ,  H01L24/16 ,  H01L2224/13082 ,  H01L2224/11462 ,  H01L2224/13005 ,  H01L2224/13021 ,  H01L2224/16227 ,  H01L2224/16237 ,  H01L24/32 ,  H01L2224/32225 ,  H01L24/73 ,  H01L2224/73203 ,  H01L21/6835

Abstract: The present disclosure discloses a manufacturing method of an electronic device. A seed layer is formed on a substrate. After patterning the seed layer to form a plurality of sub-seed layers and a plurality of conductive lines, a metal layer is formed on a plurality of the sub-seed layers. The sub-seed layers include a first sub-seed layer and a second sub-seed layer, and the first sub-seed layer and the second sub-seed layer are separated from each other.