ZERO-MISALIGNMENT TWO-VIA STRUCTURES USING PHOTOIMAGEABLE DIELECTRIC FILM BUILDUP FILM, AND TRANSPARENT SUBSTRATE WITH ELECTROLESS PLATING

    公开(公告)号:US20200219814A1

    公开(公告)日:2020-07-09

    申请号:US16648640

    申请日:2017-12-30

    Abstract: A device package and method of forming the device package are described. The device package includes a dielectric on a conductive pad, a first via on a top surface of conductive pad, where the first via extends through dielectric, and a conductive trace on dielectric. The device package has a second via on dielectric, where the conductive trace connects to first and second vias, and the second via connects to an edge of conductive trace opposite from first via. The device package may have a seed on dielectric, where the seed electrically couples to conductive trace, a first seed on the top surface of conductive pad, where the first via is on first seed, and a second seed on a top surface of first via, the second seed on surfaces of second via, where the conductive trace is on second seed disposed on both first and second vias.

    ZERO-MISALIGNMENT TWO-VIA STRUCTURES
    4.
    发明申请

    公开(公告)号:US20200294901A1

    公开(公告)日:2020-09-17

    申请号:US16649578

    申请日:2017-12-30

    Abstract: Device package and a method of forming a device package are described. The device package includes an interposer with interconnects on an interconnect package layer and a conductive layer on the interposer. The device package has dies on the conductive layer, where the package layer includes a zero-misalignment two-via stack (ZM2VS) and a dielectric. The ZM2VS directly coupled to the interconnect. The ZM2VS further includes the dielectric on a conductive pad, a first via on a first seed, and first seed on a top surface of the conductive pad, where the first via extends through dielectric. The ZM2VS also has a conductive trace on dielectric, and a second via on a second seed, the second seed is on the dielectric, where the conductive trace connects to first and second vias, where second via connects to an edge of conductive trace opposite from first via.

    ZERO-MISALIGNMENT TWO-VIA STRUCTURES USING PHOTOIMAGEABLE DIELECTRIC, BUILDUP FILM, AND ELECTROLYTIC PLATING

    公开(公告)号:US20200258839A1

    公开(公告)日:2020-08-13

    申请号:US16648850

    申请日:2017-12-30

    Abstract: A device package and a method of forming a device package are described. The device package includes a dielectric on a conductive pad, and a first via on a first seed on a top surface of the conductive pad. The device package further includes a conductive trace on the dielectric, and a second via on a second seed layer on the dielectric. The conductive trace connects to the first via and the second via, where the second via connects to an edge of the conductive trace opposite from the first via. The dielectric may include a photoimageable dielectric or a buildup film. The device package may also include a seed on the dielectric prior to the conductive trace on the dielectric, and a second dielectric on the dielectric, the conductive trace, and the first and second vias, where the second dielectric exposes a top surface of the second via.

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