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公开(公告)号:US11955343B2
公开(公告)日:2024-04-09
申请号:US17701367
申请日:2022-03-22
申请人: Intel Corporation
IPC分类号: G03F7/039 , G03F7/004 , G03F7/20 , G03F7/38 , H01L21/027 , H01L21/033 , H01L21/311 , H01L21/768
CPC分类号: H01L21/31144 , G03F7/0045 , G03F7/0392 , G03F7/203 , G03F7/38 , H01L21/0273 , H01L21/0337 , H01L21/76801 , H01L21/76808 , H01L21/76816
摘要: Two-stage bake photoresists with releasable quenchers for fabricating back end of line (BEOL) interconnects are described. In an example, a photolyzable composition includes an acid-deprotectable photoresist material having substantial transparency at a wavelength, a photo-acid-generating (PAG) component having substantial transparency at the wavelength, and a base-generating component having substantial absorptivity at the wavelength.
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公开(公告)号:US11315798B2
公开(公告)日:2022-04-26
申请号:US16075555
申请日:2016-04-08
申请人: Intel Corporation
IPC分类号: G03F7/039 , H01L21/311 , G03F7/004 , G03F7/20 , G03F7/38 , H01L21/027 , H01L21/033 , H01L21/768
摘要: Two-stage bake photoresists with releasable quenchers for fabricating back end of line (BEOL) interconnects are described. In an example, a photolyzable composition includes an acid-deprotectable photoresist material having substantial transparency at a wavelength, a photo-acid-generating (PAG) component having substantial transparency at the wavelength, and a base-generating component having substantial absorptivity at the wavelength.
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