公开(公告)号：US20240204064A1

公开(公告)日：2024-06-20

申请号：US18084844

申请日：2022-12-20

Applicant: Intel Corporation

Inventor： Guillaume Bouche ,  Bilal Chehab ,  Lars Liebmann ,  Quan Shi

IPC: H01L29/417 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775

CPC classification number: H01L29/41733 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/823871 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/401 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/775

Abstract: Techniques are provided herein to form semiconductor devices having a dielectric wall or spine between two devices that extends between source or drain regions of the two devices and separates backside contacts to the source or drain regions. A first semiconductor device includes a first semiconductor region extending from a first source or drain region and a second adjacent semiconductor device includes a second semiconductor region extending from a second source or drain region adjacent to the first source or drain region. A dielectric wall extends between the first source or drain region and the second source or drain region. A first backside contact touches the underside of the first source or drain region and a second backside contact touches the underside of the second source or drain region. The dielectric wall further extends down between the first conductive contact and the second conductive contact.

公开(公告)号：US20240202415A1

公开(公告)日：2024-06-20

申请号：US18068601

申请日：2022-12-20

Applicant: Intel Corporation

Inventor： Quan Shi ,  Patrick Morrow ,  Charles Henry Wallace ,  Lars Liebmann ,  Thi Nguyen ,  Sivakumar Venkataraman ,  Nikolay Ryzhenko Vladimirovich ,  Xinning Wang ,  Douglas Stout

IPC: G06F30/392 ,  G06F30/394

CPC classification number: G06F30/392 ,  G06F30/394 ,  G06F2119/18

Abstract: Transistor cell architectures have three MO routing tracks within a single cell height. The cell architectures include at least one p-type transistor formed over a p-type diffusion region and at least one n-type transistor formed over an n-type diffusion region. Each diffusion region extends primarily in a particular direction, and the MO routing tracks extending in the same direction as the diffusion regions. One MO routing track may be formed over each of the diffusion regions, and a third MO routing track formed between the diffusion regions.