公开(公告)号：US20180350914A1

公开(公告)日：2018-12-06

申请号：US15777650

申请日：2015-12-17

Applicant: Intel Corporation

Inventor： Paul A. ZIMMERMAN ,  Ian A. YOUNG ,  Wilman TSAI

IPC: H01L29/16 ,  H01L29/06 ,  H01L29/417 ,  H01L29/66 ,  H01L29/778 ,  C01B32/182

CPC classification number: H01L29/1606 ,  C01B32/182 ,  H01L29/0665 ,  H01L29/41725 ,  H01L29/66045 ,  H01L29/66356 ,  H01L29/7391 ,  H01L29/778

Abstract: Molecular Graphene (MG) of a physical size and bonding character that render the molecule suitable as a channel material in an electronic device, such as a tunnel field effect transistor (TFET). The molecular graphene may be a large polycyclic aromatic hydrocarbon (PAH) employed as a discrete element, or as a repeat unit, within an active or passive electronic device. In some embodiments, a functionalized PAH is disposed over a substrate surface and extending between a plurality of through-substrate vias. Heterogeneous surfaces on the substrate are employed to direct deposition of the functionalized PAH molecule to surface sites interstitial to the array of vias. Vias may be backfilled with conductive material as self-aligned source/drain contacts. Directed self-assembly techniques may be employed to form local interconnect lines coupled to the conductive via material. In some embodiments, graphene-based interconnects comprising a linear array of PAH molecules are formed over a substrate.

公开(公告)号：US20170058401A1

公开(公告)日：2017-03-02

申请号：US15119699

申请日：2014-03-27

Applicant: Intel Corporation

Inventor： James M. BLACKWELL ,  Patricio E. ROMERO ,  Scott B. CLENDENNING ,  Grant M. KLOSTER ,  Florian GSTREIN ,  Harsono S. SIMKA ,  Paul A. ZIMMERMAN ,  Robert L. BRISTOL

IPC: C23C16/455 ,  H01L21/768 ,  H01L29/66 ,  H01L21/285 ,  C23C16/18 ,  C23C16/48

CPC classification number: C23C16/45553 ,  C23C16/18 ,  C23C16/482 ,  H01L21/0337 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76816 ,  H01L21/76879 ,  H01L21/76897 ,  H01L29/66795

Abstract: Precursor and process design for photo-assisted metal atomic layer deposition (ALD) and chemical vapor deposition (CVD) is described. In an example, a method of fabricating a thin metal film involves introducing precursor molecules proximate to a surface on or above a substrate, each of the precursor molecules having one or more metal centers surrounded by ligands. The method also involves depositing a metal layer on the surface by dissociating the ligands from the precursor molecules using a photo-assisted process.

Abstract translation: 描述了光辅助金属原子层沉积（ALD）和化学气相沉积（CVD）的前体和工艺设计。 在一个实例中，制造薄金属膜的方法包括将前体分子引入靠近基底上或表面的表面，每个前体分子具有被配体包围的一个或多个金属中心。 该方法还涉及通过使用光辅助方法从前体分子解离配体而在表面上沉积金属层。