公开(公告)号：US20170117241A1

公开(公告)日：2017-04-27

申请号：US14920197

申请日：2015-10-22

申请人： International Business Machines Corporation

发明人： Brian M. Erwin ,  Brittany L. Hedrick ,  Nicholas A. Polomoff ,  TaeHo Kim ,  Matthew E. Souter

IPC分类号： H01L23/00

CPC分类号： H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/03632 ,  H01L2224/0381 ,  H01L2224/0382 ,  H01L2224/04105 ,  H01L2224/05647 ,  H01L2224/11009 ,  H01L2224/11632 ,  H01L2224/1181 ,  H01L2224/1182 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13686 ,  H01L2924/05042 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/01029 ,  H01L2924/053

摘要： A semiconductor structure includes an electrically conductive structure formed upon an uppermost organic layer of a semiconductor substrate. A capping layer is formed upon the uppermost organic layer covering the electrically conductive structure. A maskless selective removal lasering technique ejects portions of the capping layer while retaining the portion of the capping layer covering the electrically conductive structure. Portions of the capping layer are ejected from the uppermost organic layer by a shockwave as a result of the laser beam vaporizing the uppermost organic layer of the semiconductor substrate. Portions of the capping layer contacting the electrically conductive structure are retained by the conductive structure dissipating heat from the laser that would otherwise vaporize the uppermost organic layer of the semiconductor substrate.

公开(公告)号：US20180076160A1

公开(公告)日：2018-03-15

申请号：US15813311

申请日：2017-11-15

申请人： International Business Machines Corporation

发明人： Brian M. Erwin ,  Brittany L. Hedrick ,  Nicholas A. Polomoff ,  TaeHo Kim ,  Matthew E. Souter

IPC分类号： H01L23/00

CPC分类号： H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/03632 ,  H01L2224/0381 ,  H01L2224/0382 ,  H01L2224/04105 ,  H01L2224/05647 ,  H01L2224/11009 ,  H01L2224/11632 ,  H01L2224/1181 ,  H01L2224/1182 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13686 ,  H01L2924/05042 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/01029 ,  H01L2924/053

摘要： A semiconductor structure includes an electrically conductive structure formed upon an uppermost organic layer of a semiconductor substrate. A capping layer is formed upon the uppermost organic layer covering the electrically conductive structure. A maskless selective removal lasering technique ejects portions of the capping layer while retaining the portion of the capping layer covering the electrically conductive structure. Portions of the capping layer are ejected from the uppermost organic layer by a shockwave as a result of the laser beam vaporizing the uppermost organic layer of the semiconductor substrate. Portions of the capping layer contacting the electrically conductive structure are retained by the conductive structure dissipating heat from the laser that would otherwise vaporize the uppermost organic layer of the semiconductor substrate.

公开(公告)号：US09613842B2

公开(公告)日：2017-04-04

申请号：US14183989

申请日：2014-02-19

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： John J. Garant ,  Jonathan H. Griffith ,  Brittany L. Hedrick ,  Edmund J. Sprogis

IPC分类号： H01L21/00 ,  B32B37/00 ,  B32B38/00 ,  H01L21/683 ,  B32B37/24 ,  B32B38/10

CPC分类号： H01L21/6835 ,  B32B37/24 ,  B32B38/10 ,  B32B2037/246 ,  B32B2315/08 ,  B32B2457/14 ,  B81C1/00666 ,  B81C2201/0167 ,  H01L2221/68304 ,  H01L2221/68327

摘要： A wafer handler with a removable bow compensating layer and methods of manufacture is disclosed. The method includes forming at least one layer of stressed material on a front side of a wafer handler. The method further includes forming another stressed material on a backside of the wafer handler which counter balances the at least one layer of stressed material on the front side of the wafer handler, thereby decreasing an overall bow of the wafer handler.

公开(公告)号：US20180082965A1

公开(公告)日：2018-03-22

申请号：US15813342

申请日：2017-11-15

申请人： International Business Machines Corporation

发明人： Brian M. Erwin ,  Brittany L. Hedrick ,  Nicholas A. Polomoff ,  TaeHo Kim ,  Matthew E. Souter

IPC分类号： H01L23/00

摘要： A semiconductor structure includes an electrically conductive structure formed upon an uppermost organic layer of a semiconductor substrate. A capping layer is formed upon the uppermost organic layer covering the electrically conductive structure. A maskless selective removal lasering technique ejects portions of the capping layer while retaining the portion of the capping layer covering the electrically conductive structure. Portions of the capping layer are ejected from the uppermost organic layer by a shockwave as a result of the laser beam vaporizing the uppermost organic layer of the semiconductor substrate. Portions of the capping layer contacting the electrically conductive structure are retained by the conductive structure dissipating heat from the laser that would otherwise vaporize the uppermost organic layer of the semiconductor substrate.

公开(公告)号：US20150235891A1

公开(公告)日：2015-08-20

申请号：US14183989

申请日：2014-02-19

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： John J. Garant ,  Jonathan H. Griffith ,  Brittany L. Hedrick ,  Edmund J. Sprogis

IPC分类号： H01L21/683 ,  B32B38/10 ,  B32B37/24 ,  H01L21/02 ,  B32B37/26

CPC分类号： H01L21/6835 ,  B32B37/24 ,  B32B38/10 ,  B32B2037/246 ,  B32B2315/08 ,  B32B2457/14 ,  B81C1/00666 ,  B81C2201/0167 ,  H01L2221/68304 ,  H01L2221/68327

摘要： A wafer handler with a removable bow compensating layer and methods of manufacture is disclosed. The method includes forming at least one layer of stressed material on a front side of a wafer handler. The method further includes forming another stressed material on a backside of the wafer handler which counter balances the at least one layer of stressed material on the front side of the wafer handler, thereby decreasing an overall bow of the wafer handler.

摘要翻译： 公开了具有可拆卸弓形补偿层的晶片处理器和制造方法。 该方法包括在晶片处理器的正面上形成至少一层应力材料。 该方法还包括在晶片处理器的背面上形成另一个应力材料，该材料在晶片处理器的前侧平衡至少一层应力材料，从而减小晶片处理器的整体弓形。