公开(公告)号：US20180076160A1

公开(公告)日：2018-03-15

申请号：US15813311

申请日：2017-11-15

申请人： International Business Machines Corporation

发明人： Brian M. Erwin ,  Brittany L. Hedrick ,  Nicholas A. Polomoff ,  TaeHo Kim ,  Matthew E. Souter

IPC分类号： H01L23/00

CPC分类号： H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/03632 ,  H01L2224/0381 ,  H01L2224/0382 ,  H01L2224/04105 ,  H01L2224/05647 ,  H01L2224/11009 ,  H01L2224/11632 ,  H01L2224/1181 ,  H01L2224/1182 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13686 ,  H01L2924/05042 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/01029 ,  H01L2924/053

摘要： A semiconductor structure includes an electrically conductive structure formed upon an uppermost organic layer of a semiconductor substrate. A capping layer is formed upon the uppermost organic layer covering the electrically conductive structure. A maskless selective removal lasering technique ejects portions of the capping layer while retaining the portion of the capping layer covering the electrically conductive structure. Portions of the capping layer are ejected from the uppermost organic layer by a shockwave as a result of the laser beam vaporizing the uppermost organic layer of the semiconductor substrate. Portions of the capping layer contacting the electrically conductive structure are retained by the conductive structure dissipating heat from the laser that would otherwise vaporize the uppermost organic layer of the semiconductor substrate.

公开(公告)号：US09824925B2

公开(公告)日：2017-11-21

申请号：US14736608

申请日：2015-06-11

申请人： International Business Machines Corporation

发明人： Mukta G. Farooq ,  Kevin S. Petrarca ,  Nicholas A. Polomoff ,  Katsuyuki Sakuma

IPC分类号： H01L21/78 ,  H01L21/56 ,  H01L21/60

CPC分类号： H01L21/78 ,  H01L21/31127 ,  H01L21/563 ,  H01L2021/6009 ,  H01L2224/73204 ,  H01L2224/81 ,  H01L2224/83191

摘要： Alignment marks on a semiconductor device surface are exposed and exposed surfaces cleaned after an obscuring coating is applied over the surface and marks. The surface can be an attachment surface of the device and can include C4 solder bumps of a flip-chip type device and the coating can include a wafer level underfill coating that is substantially optically opaque. Laser ablation, such as with a UV laser, can remove the coating while minimizing heat transfer to the device.

公开(公告)号：US20150311161A1

公开(公告)日：2015-10-29

申请号：US14263423

申请日：2014-04-28

申请人： International Business Machines Corporation

发明人： Charles L. Arvin ,  Harry D. Cox ,  Brian M. Erwin ,  John J. Garant ,  Ekta Misra ,  Nicholas A. Polomoff ,  Jennifer D. Schuler

IPC分类号： H01L23/532 ,  H01L21/321 ,  H01L21/288 ,  H01L23/528 ,  H01L21/768

CPC分类号： H01L23/53238 ,  C25D3/38 ,  C25D5/02 ,  C25D5/022 ,  C25D5/48 ,  C25D7/123 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76873 ,  H01L21/76879 ,  H01L23/528 ,  H01L23/53228 ,  H01L23/53233 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method including forming a stack of layers on top of a dielectric layer and within an opening in the dielectric layer, the stack of layers comprising a first layer, a second layer, a third layer, and a fourth layer, each formed successively one on top of another, removing a first portion of the fourth layer outside the opening to expose a portion of the third layer, a second portion of the fourth layer remains within the opening, filling the opening with a metal by applying an electrical potential to the second layer during an electroplating technique in which the metal plates out on the fourth layer but does not plate out on the third layer, and removing portions of the first layer, the second layer, and the third layer to expose an upper surface of the dielectric layer between the opening and an adjacent opening.

摘要翻译： 一种方法，包括在电介质层的顶部和电介质层的开口内形成层叠层，所述层叠层包括第一层，第二层，第三层和第四层， 另一个顶部，除去开口外部的第四层的第一部分以暴露第三层的一部分，第四层的第二部分保留在开口内，通过向第二层施加电势而用金属填充开口 在电镀技术中，金属板在第四层上排出但不在第三层上沉积，并且去除第一层，第二层和第三层的部分以暴露介电层的上表面 在开口和相邻开口之间。

公开(公告)号：US20170117241A1

公开(公告)日：2017-04-27

申请号：US14920197

申请日：2015-10-22

申请人： International Business Machines Corporation

发明人： Brian M. Erwin ,  Brittany L. Hedrick ,  Nicholas A. Polomoff ,  TaeHo Kim ,  Matthew E. Souter

IPC分类号： H01L23/00

CPC分类号： H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/03632 ,  H01L2224/0381 ,  H01L2224/0382 ,  H01L2224/04105 ,  H01L2224/05647 ,  H01L2224/11009 ,  H01L2224/11632 ,  H01L2224/1181 ,  H01L2224/1182 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13686 ,  H01L2924/05042 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/01029 ,  H01L2924/053

摘要： A semiconductor structure includes an electrically conductive structure formed upon an uppermost organic layer of a semiconductor substrate. A capping layer is formed upon the uppermost organic layer covering the electrically conductive structure. A maskless selective removal lasering technique ejects portions of the capping layer while retaining the portion of the capping layer covering the electrically conductive structure. Portions of the capping layer are ejected from the uppermost organic layer by a shockwave as a result of the laser beam vaporizing the uppermost organic layer of the semiconductor substrate. Portions of the capping layer contacting the electrically conductive structure are retained by the conductive structure dissipating heat from the laser that would otherwise vaporize the uppermost organic layer of the semiconductor substrate.

公开(公告)号：US20160204028A1

公开(公告)日：2016-07-14

申请号：US15072685

申请日：2016-03-17

申请人： International Business Machines Corporation ,  SUSS MicroTec Photonic Systems Inc.

发明人： Yuri M. Brovman ,  Brian M. Erwin ,  Nicholas A. Polomoff ,  Jennifer D. Schuler ,  Matthew E. Souter ,  Christopher L. Tessler

IPC分类号： H01L21/768

CPC分类号： H01L21/76841 ,  H01L21/76825 ,  H01L21/76837 ,  H01L21/7684 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76852 ,  H01L21/76865 ,  H01L21/76877 ,  H01L21/76883 ,  H01L21/76885 ,  H01L23/53238 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/03614 ,  H01L2224/03632 ,  H01L2224/0381 ,  H01L2224/039 ,  H01L2224/0401 ,  H01L2224/05187 ,  H01L2224/05647 ,  H01L2224/1182 ,  H01L2224/13007 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/13687 ,  H01L2924/00014 ,  H01L2924/04953 ,  H01L2924/04941 ,  H01L2924/00012

摘要： A method of selectively locating a barrier layer on a substrate includes forming a barrier layer on a surface of the substrate. The barrier layer comprises of a metal element and a non-metal element. The barrier layer may also be formed from a metal element and non-metal element. The method further includes forming an electrically conductive film layer on the barrier layer, and forming a metallic portion in the electrically conductive film layer. The method further includes selectively ablating portions of the barrier layer from the dielectric layer to selectively locate place the barrier layer on the substrate.

公开(公告)号：US20160074968A1

公开(公告)日：2016-03-17

申请号：US14483321

申请日：2014-09-11

申请人： SUSS MicroTec Photonic Systems Inc. ,  International Business Machines Corporation

发明人： Matthew E. Souter ,  Brian M. Erwin ,  Nicholas A. Polomoff ,  Christopher L. Tessler

IPC分类号： B23K26/36 ,  B23K26/06 ,  G03F1/48 ,  B23K26/00

CPC分类号： B23K26/009 ,  B23K26/066 ,  B23K26/361 ,  B23K2103/56

摘要： A laser etching system includes a laser source configured to generate a plurality of laser pulses during an etching pass. A workpiece is aligned with respect to the laser source. The workpiece includes an etching material that is etched in response to receiving the plurality of laser pulses. A mask reticle is interposed between the laser source and the workpiece. The mask reticle includes at least one mask pattern configured to regulate the fluence or a number of laser pulses realized by the workpiece such that a plurality of features having different depths with respect to one another are etched in the etching material.

摘要翻译： 激光蚀刻系统包括被配置为在蚀刻通过期间产生多个激光脉冲的激光源。 工件相对于激光源对准。 工件包括蚀刻材料，其被蚀刻以响应于接收多个激光脉冲。 掩模掩模布置在激光源和工件之间。 掩模掩模版包括至少一个掩模图案，其被配置为调节由工件实现的注量或多个激光脉冲，使得在蚀刻材料中蚀刻具有彼此不同深度的多个特征。

公开(公告)号：US20150235979A1

公开(公告)日：2015-08-20

申请号：US14181616

申请日：2014-02-14

申请人： International Business Machines Corporation

发明人： Brian M. Erwin ,  Eric D. Perfecto ,  Nicholas A. Polomoff ,  Jae-Woong Nah

IPC分类号： H01L23/00 ,  H01L23/16

CPC分类号： H01L24/17 ,  H01L21/561 ,  H01L21/563 ,  H01L24/05 ,  H01L24/11 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/04026 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/13005 ,  H01L2224/13147 ,  H01L2224/2732 ,  H01L2224/27416 ,  H01L2224/27418 ,  H01L2224/27515 ,  H01L2224/27632 ,  H01L2224/2784 ,  H01L2224/29023 ,  H01L2224/29028 ,  H01L2224/29076 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29388 ,  H01L2224/32147 ,  H01L2224/83191 ,  H01L2224/83203 ,  H01L2224/83815 ,  H01L2224/8385 ,  H01L2224/83885 ,  H01L2224/94 ,  H01L2924/00011 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/206 ,  H01L2924/0665 ,  H01L2224/81805 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2224/03 ,  H01L2224/27

摘要： Electronic devices including solder bumps embedded in a pre-applied coating of underfill material and/or solder resist are fabricated, thereby improving chip-package interaction reliability. Underfill can be directly applied to a wafer, enabling increased filler loadings. Passages formed in the underfill and/or solder resist coating expose electrically conductive pads or metal pillars. Such passages can be filled with molten solder to form the solder bumps.

摘要翻译： 制造包括嵌入在预填充材料和/或阻焊剂的预涂层中的焊料凸块的电子器件，从而提高芯片封装相互作用的可靠性。 底部填充物可以直接施加到晶片上，从而增加填料的填充量。 在底部填充物和/或阻焊涂层中形成的通道暴露导电垫或金属柱。 可以用熔融焊料填充这样的通道以形成焊料凸块。

公开(公告)号：US20160184926A1

公开(公告)日：2016-06-30

申请号：US14585404

申请日：2014-12-30

申请人： SUSS MicroTec Photonic Systems Inc. ,  International Business Machines Corporation

发明人： Courtney T. Sheets ,  Matthew E. Souter ,  Brian M. Erwin ,  Bouwe W. Leenstra ,  Nicholas A. Polomoff ,  Christopher L. Tessler

IPC分类号： B23K26/06 ,  B23K26/362 ,  B23K26/40 ,  B23K26/03

CPC分类号： B23K26/0626 ,  B23K26/0622 ,  B23K26/066 ,  B23K26/361 ,  B23K26/362 ,  B23K26/40 ,  B23K26/402

摘要： An ablation system includes an ablation tool configured to generate an energy beam to ablate an energy-sensitive material formed on at least one embedded feature of a workpiece. The ablation tool selects an initial fluence and an initial pulse rate of the energy beam to ablate a first portion of the energy-sensitive layer. The ablation tool further reduces at least one of the initial fluence and the initial pulse rate of the energy beam to ablate a second remaining portion of the energy-sensitive layer such that the embedded feature is exposed without being damaged or deformed.

摘要翻译： 消融系统包括消融工具，其被配置为产生能量束以消融形成在工件的至少一个嵌入特征上的能量敏感材料。 消融工具选择能量束的初始注量和初始脉冲速率来消融能量敏感层的第一部分。 消融工具进一步减少能量束的初始注量和初始脉冲速率中的至少一个，以消除能量敏感层的第二剩余部分，使得嵌入特征被暴露而不被损坏或变形。

公开(公告)号：US09748135B2

公开(公告)日：2017-08-29

申请号：US14828608

申请日：2015-08-18

申请人： International Business Machines Corporation ,  SUSS MicroTec Photonic Systems Inc.

发明人： Yuri M. Brovman ,  Brian M. Erwin ,  Nicholas A. Polomoff ,  Jennifer D. Schuler ,  Matthew E. Souter ,  Christopher L. Tessler

IPC分类号： H01L21/768

CPC分类号： H01L21/76841 ,  H01L21/76825 ,  H01L21/76837 ,  H01L21/7684 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76852 ,  H01L21/76865 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/53238 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/03614 ,  H01L2224/03632 ,  H01L2224/0381 ,  H01L2224/039 ,  H01L2224/0401 ,  H01L2224/05187 ,  H01L2224/05647 ,  H01L2224/1182 ,  H01L2224/13007 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/13687 ,  H01L2924/00014 ,  H01L2924/04953 ,  H01L2924/04941 ,  H01L2924/00012

摘要： A method of selectively locating a barrier layer on a substrate includes forming a barrier layer on a surface of the substrate. The barrier layer comprises of a metal element and a non-metal element. The barrier layer may also be formed from a metal element and non-metal element. The method further includes forming an electrically conductive film layer on the barrier layer, and forming a metallic portion in the electrically conductive film layer. The method further includes selectively ablating portions of the barrier layer from the dielectric layer to selectively locate place the barrier layer on the substrate.

公开(公告)号：US20150357235A1

公开(公告)日：2015-12-10

申请号：US14828608

申请日：2015-08-18

申请人： International Business Machines Corporation ,  SUSS MicroTec Photonic Systems Inc.

发明人： Yuri M. Brovman ,  Brian M. Erwin ,  Nicholas A. Polomoff ,  Jennifer D. Schuler ,  Matthew E. Souter ,  Christopher L. Tessler

IPC分类号： H01L21/768

CPC分类号： H01L21/76841 ,  H01L21/76825 ,  H01L21/76837 ,  H01L21/7684 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76852 ,  H01L21/76865 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/53238 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/03614 ,  H01L2224/03632 ,  H01L2224/0381 ,  H01L2224/039 ,  H01L2224/0401 ,  H01L2224/05187 ,  H01L2224/05647 ,  H01L2224/1182 ,  H01L2224/13007 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/13687 ,  H01L2924/00014 ,  H01L2924/04953 ,  H01L2924/04941 ,  H01L2924/00012

摘要： A method of selectively locating a barrier layer on a substrate includes forming a barrier layer on a surface of the substrate. The barrier layer comprises of a metal element and a non-metal element. The barrier layer may also be formed from a metal element and non-metal element. The method further includes forming an electrically conductive film layer on the barrier layer, and forming a metallic portion in the electrically conductive film layer. The method further includes selectively ablating portions of the barrier layer from the dielectric layer to selectively locate place the barrier layer on the substrate.