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公开(公告)号：US20230094707A1
公开(公告)日：2023-03-30
申请号：US17485999
申请日：2021-09-27
发明人： Richard C. Johnson , Alex Richard Hubbard , Vinay Pai , Cody J. Murray , Fee Li Lie , Nikhil Jain
IPC分类号： G06F21/73
摘要： Embodiments are disclosed for a method. The method includes generating a correction datastore indicating shifts in magnitude representing corresponding characters that uniquely identify hardware comprising a computer processing chip. The method further includes generating security masks based on a correction file. Additionally, the method includes using a correction process for the computer processing chip. The generated security masks include corresponding overlays representing the shifts in magnitude with respect to corresponding product masks for the computer processing chip. The method also includes generating the computer processing chip using the security masks and the product masks.
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公开(公告)号：US20220415523A1
公开(公告)日：2022-12-29
申请号：US17356796
申请日：2021-06-24
摘要： In an approach, a processor receives device identification information corresponding to at least one device local to a location of a transaction. A processor receives notification of an infected user. A processor determines that the infected user is associated with the transaction. A processor identifies a second user from the device identification information. A processor sends a notification to the second user.
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公开(公告)号：US20220406657A1
公开(公告)日：2022-12-22
申请号：US17351307
申请日：2021-06-18
发明人： SOMNATH GHOSH , Karen Elizabeth Petrillo , Cody J. Murray , Ekmini Anuja De Silva , Chi-Chun LIU , Dominik METZLER , John Christopher Arnold
IPC分类号： H01L21/768 , H01L21/3213
摘要： A method of manufacturing a semiconductor device is provided. The method includes forming a plurality of metal lines on substrate, forming a sacrificial dielectric material layer between the metal lines, forming a hardmask over at least one of the metal lines, etching at least one of the metal lines that is not covered by the hardmask, treating the sacrificial dielectric material layer to soften the layer. The method also includes removing the treated sacrificial dielectric material layer.
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公开(公告)号：US11561481B2
公开(公告)日：2023-01-24
申请号：US16932983
申请日：2020-07-20
摘要： Techniques for using open frame (E0) exposures for lithographic tool track/cluster monitoring are provided. In one aspect, a method for monitoring a lithographic process includes: performing open frame exposures E0 of at least one wafer coated with a photoresist using a photolithography tool; baking and developing the at least one wafer; performing a defect inspection of the at least one wafer to generate a haze map; grouping haze data from the haze map; and analyzing the haze data to identify a maximum E0 response dose E′.
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公开(公告)号：US20220019139A1
公开(公告)日：2022-01-20
申请号：US16932983
申请日：2020-07-20
摘要： Techniques for using open frame (E0) exposures for lithographic tool track/cluster monitoring are provided. In one aspect, a method for monitoring a lithographic process includes: performing open frame exposures E0 of at least one wafer coated with a photoresist using a photolithography tool; baking and developing the at least one wafer; performing a defect inspection of the at least one wafer to generate a haze map; grouping haze data from the haze map; and analyzing the haze data to identify a maximum E0 response dose E′.
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