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公开(公告)号：US10170359B2
公开(公告)日：2019-01-01
申请号：US15797791
申请日：2017-10-30
IPC分类号： H01L21/768 , H01L21/285 , H01L23/485 , H01L23/532
摘要： A method of forming a titanium nitride (TiN) diffusion barrier includes exposing a deposition surface to a first pulse of a titanium-containing precursor and to a first pulse of a nitrogen-rich plasma to form a first TiN layer with a first nitrogen concentration making a lower portion of the TiN diffusion barrier, the first nitrogen concentration of the first TiN layer is increased by the first pulse of the nitrogen-rich plasma reducing a reactivity of the lower portion of the TiN diffusion barrier to prevent fluorine diffusion. The first TiN layer is exposed to second pulses of the titanium-containing precursor and the nitrogen-rich plasma to form a second TiN layer with a second nitrogen concentration above the first TiN layer making an upper portion of the TiN diffusion barrier, the first pulse of the nitrogen-rich plasma has a substantially longer duration than the second pulse of the nitrogen-rich plasma.
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公开(公告)号：US09847251B2
公开(公告)日：2017-12-19
申请号：US15164071
申请日：2016-05-25
IPC分类号： H01L21/768 , H01L21/285 , H01L23/485 , H01L23/532
CPC分类号： H01L21/76856 , H01L21/28556 , H01L21/28562 , H01L21/28568 , H01L21/76841 , H01L21/76843 , H01L21/76858 , H01L21/76862 , H01L21/76867 , H01L21/76876 , H01L21/76895 , H01L23/485 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a titanium nitride (TiN) diffusion barrier includes exposing a deposition surface to a first pulse of a titanium-containing precursor and to a first pulse of a nitrogen-rich plasma to form a first TiN layer with a first nitrogen concentration making a lower portion of the TiN diffusion barrier, the first nitrogen concentration of the first TiN layer is increased by the first pulse of the nitrogen-rich plasma reducing a reactivity of the lower portion of the TiN diffusion barrier to prevent fluorine diffusion. The first TiN layer is exposed to second pulses of the titanium-containing precursor and the nitrogen-rich plasma to form a second TiN layer with a second nitrogen concentration above the first TiN layer making an upper portion of the TiN diffusion barrier, the first pulse of the nitrogen-rich plasma has a substantially longer duration than the second pulse of the nitrogen-rich plasma.
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3.发明授权Hardmask removal for copper interconnects with tungsten contacts by chemical mechanical polishing 有权通过化学机械抛光对钨触点进行铜互连的硬掩模去除公开(公告)号：US09293365B2
公开(公告)日：2016-03-22
申请号：US14226891
申请日：2014-03-27
IPC分类号： H01L21/4763 , H01L23/48 , H01L21/768 , H01L21/02 , H01L21/3105 , H01L21/311 , H01L21/3213 , H01L23/532
CPC分类号： H01L21/76877 , H01L21/02063 , H01L21/31058 , H01L21/31144 , H01L21/32133 , H01L21/76805 , H01L21/76807 , H01L21/76814 , H01L21/76834 , H01L21/7684 , H01L21/76849 , H01L23/53223 , H01L23/53238 , H01L23/53266 , H01L23/53276 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates generally to forming interconnects over contacts and more particularly, to a method and structure for filling interconnect trenches with a sacrificial filler material before removal of a hard mask layer to protect the liners of the contacts from damage during the removal process. A method is disclosed that may include: filling an opening in a dielectric layer above a contact and a contact liner with a sacrificial filler material, such that the contact liner is completely covered by the sacrificial filler material; removing a hard mask layer used to pattern and form the opening; and removing the sacrificial filler material from the opening selective to the dielectric layer, the contact liner, and the contact to form an interconnect trench.
摘要翻译： 本发明一般涉及在触点上形成互连件，更具体地说，涉及一种用于在去除硬掩模层之前用牺牲填充材料填充互连沟槽的方法和结构，以保护触点的衬垫在去除过程中免受损坏。 公开了一种方法，其可以包括：在接触件上方的电介质层中填充开口和具有牺牲填充材料的接触衬里，使得接触衬里被牺牲填充材料完全覆盖; 去除用于图案和形成开口的硬掩模层; 以及从对所述介电层，所述接触衬垫和所述接触件选择性的所述开口中去除所述牺牲填充材料以形成互连沟槽。
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公开(公告)号：US10319633B2
公开(公告)日：2019-06-11
申请号：US15164063
申请日：2016-05-25
IPC分类号： H01L21/768 , H01L21/285 , H01L23/485 , H01L23/532
摘要： A method of forming a titanium nitride (TiN) diffusion barrier includes exposing a deposition surface to a first pulse of a titanium-containing precursor and to a first pulse of a nitrogen-rich plasma to form a first TiN layer with a first nitrogen concentration making a lower portion of the TiN diffusion barrier, the first nitrogen concentration of the first TiN layer is increased by the first pulse of the nitrogen-rich plasma reducing a reactivity of the lower portion of the TiN diffusion barrier to prevent fluorine diffusion. The first TiN layer is exposed to second pulses of the titanium-containing precursor and the nitrogen-rich plasma to form a second TiN layer with a second nitrogen concentration above the first TiN layer making an upper portion of the TiN diffusion barrier, the first pulse of the nitrogen-rich plasma has a substantially longer duration than the second pulse of the nitrogen-rich plasma.
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公开(公告)号：US20180047622A1
公开(公告)日：2018-02-15
申请号：US15797791
申请日：2017-10-30
IPC分类号： H01L21/768 , H01L23/485 , H01L21/285 , H01L23/532
CPC分类号： H01L21/76856 , H01L21/28556 , H01L21/28562 , H01L21/28568 , H01L21/76841 , H01L21/76843 , H01L21/76858 , H01L21/76862 , H01L21/76867 , H01L21/76876 , H01L21/76895 , H01L23/485 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a titanium nitride (TiN) diffusion barrier includes exposing a deposition surface to a first pulse of a titanium-containing precursor and to a first pulse of a nitrogen-rich plasma to form a first TiN layer with a first nitrogen concentration making a lower portion of the TiN diffusion barrier, the first nitrogen concentration of the first TiN layer is increased by the first pulse of the nitrogen-rich plasma reducing a reactivity of the lower portion of the TiN diffusion barrier to prevent fluorine diffusion. The first TiN layer is exposed to second pulses of the titanium-containing precursor and the nitrogen-rich plasma to form a second TiN layer with a second nitrogen concentration above the first TiN layer making an upper portion of the TiN diffusion barrier, the first pulse of the nitrogen-rich plasma has a substantially longer duration than the second pulse of the nitrogen-rich plasma.
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公开(公告)号：US20180374746A1
公开(公告)日：2018-12-27
申请号：US16118883
申请日：2018-08-31
IPC分类号： H01L21/768 , H01L23/532 , H01L23/485 , H01L21/285
摘要： A method of forming a titanium nitride (TiN) diffusion barrier includes exposing a deposition surface to a first pulse of a titanium-containing precursor and to a first pulse of a nitrogen-rich plasma to form a first TiN layer with a first nitrogen concentration making a lower portion of the TiN diffusion barrier, the first nitrogen concentration of the first TiN layer is increased by the first pulse of the nitrogen-rich plasma reducing a reactivity of the lower portion of the TiN diffusion barrier to prevent fluorine diffusion. The first TiN layer is exposed to second pulses of the titanium-containing precursor and the nitrogen-rich plasma to form a second TiN layer with a second nitrogen concentration above the first TiN layer making an upper portion of the TiN diffusion barrier, the first pulse of the nitrogen-rich plasma has a substantially longer duration than the second pulse of the nitrogen-rich plasma.
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公开(公告)号：US20160276217A1
公开(公告)日：2016-09-22
申请号：US15164063
申请日：2016-05-25
IPC分类号： H01L21/768
CPC分类号： H01L21/76856 , H01L21/28556 , H01L21/28562 , H01L21/28568 , H01L21/76841 , H01L21/76843 , H01L21/76858 , H01L21/76862 , H01L21/76867 , H01L21/76876 , H01L21/76895 , H01L23/485 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a titanium nitride (TiN) diffusion barrier includes exposing a deposition surface to a first pulse of a titanium-containing precursor and to a first pulse of a nitrogen-rich plasma to form a first TiN layer with a first nitrogen concentration making a lower portion of the TiN diffusion barrier, the first nitrogen concentration of the first TiN layer is increased by the first pulse of the nitrogen-rich plasma reducing a reactivity of the lower portion of the TiN diffusion barrier to prevent fluorine diffusion. The first TiN layer is exposed to second pulses of the titanium-containing precursor and the nitrogen-rich plasma to form a second TiN layer with a second nitrogen concentration above the first TiN layer making an upper portion of the TiN diffusion barrier, the first pulse of the nitrogen-rich plasma has a substantially longer duration than the second pulse of the nitrogen-rich plasma.
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公开(公告)号：US09406554B2
公开(公告)日：2016-08-02
申请号：US14501137
申请日：2014-09-30
IPC分类号： H01L21/768 , H01L21/285
CPC分类号： H01L21/76856 , H01L21/28556 , H01L21/28562 , H01L21/28568 , H01L21/76841 , H01L21/76843 , H01L21/76858 , H01L21/76862 , H01L21/76867 , H01L21/76876 , H01L21/76895 , H01L23/485 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a titanium nitride (TiN) diffusion barrier includes exposing a deposition surface to a first pulse of a titanium-containing precursor and to a first pulse of a nitrogen-rich plasma to form a first TiN layer with a first nitrogen concentration making a lower portion of the TiN diffusion barrier, the first nitrogen concentration of the first TiN layer is increased by the first pulse of the nitrogen-rich plasma reducing a reactivity of the lower portion of the TiN diffusion barrier to prevent fluorine diffusion. The first TiN layer is exposed to second pulses of the titanium-containing precursor and the nitrogen-rich plasma to form a second TiN layer with a second nitrogen concentration above the first TiN layer making an upper portion of the TiN diffusion barrier, the first pulse of the nitrogen-rich plasma has a substantially longer duration than the second pulse of the nitrogen-rich plasma.
摘要翻译： 形成氮化钛（TiN）扩散阻挡层的方法包括将沉积表面暴露于含钛前体的第一脉冲和富氮等离子体的第一脉冲，以形成具有第一氮浓度的第一TiN层 TiN扩散阻挡层的下部，第一TiN层的第一氮浓度通过富氮等离子体的第一脉冲增加，从而降低TiN扩散阻挡层的下部的反应性，以防止氟扩散。 第一TiN层暴露于含钛前体和富氮等离子体的第二脉冲，以形成具有第二氮浓度的第二TiN层，其上形成TiN扩散阻挡层的上部，第一脉冲 的富氮等离子体具有比富氮等离子体的第二脉冲更长的持续时间。
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公开(公告)号：US20150111374A1
公开(公告)日：2015-04-23
申请号：US14057529
申请日：2013-10-18
IPC分类号： H01L21/3065 , H01L21/768 , H01L29/66
CPC分类号： H01L21/30655 , H01L21/76876 , H01L21/76877 , H01L21/76879 , H01L29/66545
摘要： Embodiments of present invention provide a method of forming semiconductor devices. The method includes creating an opening in a semiconductor structure; depositing a first layer of metal inside the opening with the first layer of metal partially filling up the opening; modifying a top surface of the first layer of metal in an etching process; passivating the modified top surface of the first layer of metal to form a passivation layer; and depositing a second layer of metal directly on top of the passivation layer.
摘要翻译： 本发明的实施例提供一种形成半导体器件的方法。 该方法包括在半导体结构中形成开口; 在所述开口内沉积第一金属层，所述第一金属层部分地填满所述开口; 在蚀刻工艺中改变第一金属层的顶表面; 钝化第一金属层的改性顶表面以形成钝化层; 以及将第二金属层直接沉积在所述钝化层的顶部上。
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公开(公告)号：US20160268161A1
公开(公告)日：2016-09-15
申请号：US15164071
申请日：2016-05-25
IPC分类号： H01L21/768
CPC分类号： H01L21/76856 , H01L21/28556 , H01L21/28562 , H01L21/28568 , H01L21/76841 , H01L21/76843 , H01L21/76858 , H01L21/76862 , H01L21/76867 , H01L21/76876 , H01L21/76895 , H01L23/485 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a titanium nitride (TiN) diffusion barrier includes exposing a deposition surface to a first pulse of a titanium-containing precursor and to a first pulse of a nitrogen-rich plasma to form a first TiN layer with a first nitrogen concentration making a lower portion of the TiN diffusion barrier, the first nitrogen concentration of the first TiN layer is increased by the first pulse of the nitrogen-rich plasma reducing a reactivity of the lower portion of the TiN diffusion barrier to prevent fluorine diffusion. The first TiN layer is exposed to second pulses of the titanium-containing precursor and the nitrogen-rich plasma to form a second TiN layer with a second nitrogen concentration above the first TiN layer making an upper portion of the TiN diffusion barrier, the first pulse of the nitrogen-rich plasma has a substantially longer duration than the second pulse of the nitrogen-rich plasma.
摘要翻译： 形成氮化钛（TiN）扩散阻挡层的方法包括将沉积表面暴露于含钛前体的第一脉冲和富氮等离子体的第一脉冲，以形成具有第一氮浓度的第一TiN层 TiN扩散阻挡层的下部，第一TiN层的第一氮浓度通过富氮等离子体的第一脉冲增加，从而降低TiN扩散阻挡层的下部的反应性，以防止氟扩散。 第一TiN层暴露于含钛前体和富氮等离子体的第二脉冲，以形成具有第二氮浓度的第二TiN层，其上形成TiN扩散阻挡层的上部，第一脉冲 的富氮等离子体具有比富氮等离子体的第二脉冲更长的持续时间。
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