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Patent Agency Ranking
1.发明申请公开(公告)号：US20190200608A1
公开(公告)日：2019-07-04
申请号：US16298101
申请日：2019-03-11
Applicant: International Business Machines Corporation
Inventor： STACEY M. GIFFORD , HUAN HU , PABLO M. ROJAS , GUSTAVO A. STOLOVITZKY
CPC classification number: A01N25/34 , A01N59/16 , B81C1/00111 , B81C1/00206 , B81C1/00444 , B81C1/0046 , B81C1/00539 , B81C99/009 , B82Y5/00 , B82Y30/00 , B82Y40/00 , C09K13/08 , C30B33/08 , C30B33/10 , H01L21/30604 , H01L21/32134 , A01N25/10
Abstract: The method comprises contacting a silicon substrate with a silver salt and an acid for a time effective to produce spikes having a first end disposed on the silicon substrate and a second end extending away from the silicon substrate. The spikes have a second end diameter of about 10 nm to about 200 nm, a height of about 100 nm to 10 micrometers, and a density of about 10 to 100 per square microns. The nanostructures provide antimicrobial properties and can be transferred to the surface of various materials such as polymers.
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公开(公告)号：US20190045777A1
公开(公告)日：2019-02-14
申请号：US16162669
申请日：2018-10-17
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： STACEY M. GIFFORD , HUAN HU , PABLO MEYER ROJAS , JOSHUA T. SMITH
Abstract: The present disclosure relates to methods for forming an antimicrobial nanostructure and antimicrobial articles. The methods may include: providing a master template of a layout of the antimicrobial nanostructure on a silicon substrate, depositing a silicon nitride layer on a top surface of the silicon substrate, forming a patterned lithographic resist mask layer on a top surface of the silicon nitride layer, generating certain silicon pillars according to the patterned lithographic resist mask using a resist and reactive ion etching, forming certain lateral silicon nanospikes on the silicon pillars by performing metal assisted chemical etching (MacEtch), and removing the silicon nitride layer and bonding a top cover glass on the silicon pillars to form the antimicrobial nanostructure having lateral silicon nanospikes. The antimicrobial article may include a component of an electronic device, a biomedical article, a household product, a food grade article, a transportation component, or a public building component.
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公开(公告)号：US20170280709A1
公开(公告)日：2017-10-05
申请号：US15091074
申请日：2016-04-05
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： STACEY M. GIFFORD , HUAN HU , PABLO MEYER ROJAS , JOSHUA T. SMITH
IPC: A01N25/00
Abstract: The present disclosure relates to methods for forming an antimicrobial nanostructure and antimicrobial articles. The methods may include: providing a master template of a layout of the antimicrobial nanostructure on a silicon substrate, depositing a silicon nitride layer on a top surface of the silicon substrate, forming a patterned lithographic resist mask layer on a top surface of the silicon nitride layer, generating certain silicon pillars according to the patterned lithographic resist mask using a resist and reactive ion etching, forming certain lateral silicon nanospikes on the silicon pillars by performing metal assisted chemical etching (MacEtch), and removing the silicon nitride layer and bonding a top cover glass on the silicon pillars to form the antimicrobial nanostructure having lateral silicon nanospikes. The antimicrobial article may include a component of an electronic device, a biomedical article, a household product, a food grade article, a transportation component, or a public building component.
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公开(公告)号：US20170354140A1
公开(公告)日：2017-12-14
申请号：US15632947
申请日：2017-06-26
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： STACEY M. GIFFORD , HUAN HU , PABLO MEYER ROJAS , JOSHUA T. SMITH
Abstract: The present disclosure relates to methods for forming an antimicrobial nanostructure and antimicrobial articles. The methods may include: providing a master template of a layout of the antimicrobial nanostructure on a silicon substrate, depositing a silicon nitride layer on a top surface of the silicon substrate, forming a patterned lithographic resist mask layer on a top surface of the silicon nitride layer, generating certain silicon pillars according to the patterned lithographic resist mask using a resist and reactive ion etching, forming certain lateral silicon nanospikes on the silicon pillars by performing metal assisted chemical etching (MacEtch), and removing the silicon nitride layer and bonding a top cover glass on the silicon pillars to form the antimicrobial nanostructure having lateral silicon nanospikes. The antimicrobial article may include a component of an electronic device, a biomedical article, a household product, a food grade article, a transportation component, or a public building component.
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5.发明申请公开(公告)号：US20170174848A1
公开(公告)日：2017-06-22
申请号：US14973984
申请日：2015-12-18
Applicant: International Business Machines Corporation
Inventor： STACEY M. GIFFORD , HUAN HU , PABLO M. ROJAS , GUSTAVO A. STOLOVITZKY
CPC classification number: A01N25/34 , A01N59/16 , B81C1/00111 , B81C1/00206 , B81C1/00444 , B81C1/0046 , B81C1/00539 , B81C99/009 , B82Y5/00 , B82Y30/00 , B82Y40/00 , C09K13/08 , C30B33/08 , C30B33/10 , H01L21/30604 , H01L21/32134 , A01N25/10
Abstract: The method comprises contacting a silicon substrate with a silver salt and an acid for a time effective to produce spikes having a first end disposed on the silicon substrate and a second end extending away from the silicon substrate. The spikes have a second end diameter of about 10 nm to about 200 nm, a height of about 100 nm to 10 micrometers, and a density of about 10 to 100 per square microns. The nanostructures provide antimicrobial properties and can be transferred to the surface of various materials such as polymers.
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