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公开(公告)号：US09802815B2
公开(公告)日：2017-10-31
申请号：US14957562
申请日：2015-12-02
Applicant: Invensense, Inc.
Inventor： Michael Julian Daneman , Mei-Lin Chan , Martin Lim , Fariboz Assaderaghi , Erhan Polatkan Ata
CPC classification number: B81C1/00246 , B81B2201/0257 , B81B2201/0264 , B81B2203/0127 , B81B2207/012 , B81C1/00158 , B81C2201/112 , B81C2203/0118 , B81C2203/0742 , B81C2203/0792 , H01L2224/83805
Abstract: A method for fabricating a MEMS device includes depositing and patterning a first sacrificial layer onto a silicon substrate, the first sacrificial layer being partially removed leaving a first remaining oxide. Further, the method includes depositing a conductive structure layer onto the silicon substrate, the conductive structure layer making physical contact with at least a portion of the silicon substrate. Further, a second sacrificial layer is formed on top of the conductive structure layer. Patterning and etching of the silicon substrate is performed stopping at the second sacrificial layer. Additionally, the MEMS substrate is bonded to a CMOS wafer, the CMOS wafer having formed thereupon a metal layer. An electrical connection is formed between the MEMS substrate and the metal layer.
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公开(公告)号：US09344808B2
公开(公告)日：2016-05-17
申请号：US14218561
申请日：2014-03-18
Applicant: InvenSense, Inc.
Inventor： Mei-Lin Chan , Michael Julian Daneman , Erhan Polatkan Ata , Xiang Li , Martin Lim
CPC classification number: H04R19/04 , B81B2201/0257 , B81B2207/012 , B81C1/00238 , B81C2203/0792 , H04R1/08 , H04R19/005 , H04R31/003 , H04R31/006 , H04R2201/003
Abstract: A MEMS device includes a first plate coupled to a second plate and a fixed third plate formed on a first substrate. The first and second plates are displaced in the presence of an acoustic pressure differential across the surfaces of the first plate. The MEMS device also includes a first electrode formed on the third plate and a second electrode formed on the second substrate. The first, second plate, and third plates are contained in an enclosure formed by a first and second substrates. The device includes an acoustic port to expose the first plate to the environment. The MEMS device also includes a first gap formed between the second and third plates and a second gap formed between the second plate and the second electrode. The displacement of the second plate causes the first gap to change inversely to the second gap.
Abstract translation: MEMS器件包括耦合到第二板的第一板和形成在第一衬底上的固定的第三板。 在第一板的表面上存在声压差的情况下，第一和第二板被移位。 MEMS器件还包括形成在第三板上的第一电极和形成在第二衬底上的第二电极。 第一，第二板和第三板被包含在由第一和第二基板形成的外壳中。 该装置包括用于将第一板暴露于环境的声学端口。 MEMS器件还包括形成在第二和第三板之间的第一间隙和形成在第二板和第二电极之间的第二间隙。 第二板的位移导致第一间隙与第二间隙成反比变化。
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3.发明授权Method for MEMS structure with dual-level structural layer and acoustic port 有权具有双层结构层和声学端口的MEMS结构方法公开(公告)号：US09227842B2
公开(公告)日：2016-01-05
申请号：US14084569
申请日：2013-11-19
Applicant: Invensense, Inc.
Inventor： Michael Julian Daneman , Mei-Lin Chan , Martin Lim , Fariboz Assaderaghi , Erhan Polatkan Ata
CPC classification number: B81C1/00246 , B81B2201/0257 , B81B2201/0264 , B81B2203/0127 , B81B2207/012 , B81C1/00158 , B81C2201/112 , B81C2203/0118 , B81C2203/0742 , B81C2203/0792 , H01L2224/83805
Abstract: A method for fabricating a MEMS device includes depositing and patterning a first sacrificial layer onto a silicon substrate, the first sacrificial layer being partially removed leaving a first remaining oxide. Further, the method includes depositing a conductive structure layer onto the silicon substrate, the conductive structure layer making physical contact with at least a portion of the silicon substrate. Further, a second sacrificial layer is formed on top of the conductive structure layer. Patterning and etching of the silicon substrate is performed stopping at the second sacrificial layer. Additionally, the MEMS substrate is bonded to a CMOS wafer, the CMOS wafer having formed thereupon a metal layer. An electrical connection is formed between the MEMS substrate and the metal layer.
Abstract translation: 一种用于制造MEMS器件的方法包括将第一牺牲层沉积并图案化到硅衬底上，第一牺牲层被部分去除留下第一剩余氧化物。 此外，该方法包括在硅衬底上沉积导电结构层，导电结构层与硅衬底的至少一部分进行物理接触。 此外，在导电结构层的顶部上形成第二牺牲层。 在第二牺牲层停止硅衬底的图案化和蚀刻。 此外，MEMS衬底被结合到CMOS晶片，其上形成有金属层的CMOS晶片。 在MEMS衬底和金属层之间形成电连接。
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公开(公告)号：US08692340B1
公开(公告)日：2014-04-08
申请号：US13800061
申请日：2013-03-13
Applicant: InvenSense, Inc.
Inventor： Erhan Polatkan Ata , Martin Lim , Xiang Li , Stephen Lloyd , Michael Julian Daneman
IPC: H01L29/82
CPC classification number: B81B7/0061 , B81B3/001 , B81B2201/0257 , B81B2203/053 , B81B2203/058 , B81B2207/012 , H04R19/005
Abstract: A MEMS device is disclosed. The MEMS device comprises a first plate with a first surface and a second surface; and an anchor attached to a first substrate. The MEMS device further includes a second plate with a third surface and a fourth surface attached to the first plate. A linkage connects the anchor to the first plate, wherein the first plate and second plate are displaced in the presence of an acoustic pressure differential between the first and second surfaces of the first plate. The first plate, second plate, linkage, and anchor are all contained in an enclosure formed by the first substrate and a second substrate, wherein one of the first and second substrates contains a through opening to expose the first surface of the first plate to the environment.
Abstract translation: 公开了MEMS器件。 MEMS器件包括具有第一表面和第二表面的第一板; 以及附接到第一基板的锚。 MEMS器件还包括具有附接到第一板的第三表面和第四表面的第二板。 连杆将锚固件连接到第一板，其中第一板和第二板在第一板的第一和第二表面之间存在声压差的情况下移位。 第一板，第二板，连杆和锚固件都包含在由第一基板和第二基板形成的外壳中，其中第一和第二基板中的一个包含通孔，以将第一板的第一表面暴露于 环境。
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Patent Agency Ranking
公开(公告)号：US09980046B2
公开(公告)日：2018-05-22
申请号：US15280607
申请日：2016-09-29
Applicant: INVENSENSE, INC.
Inventor： Jeremy Parker , Sushil Bharatan , Erhan Polatkan Ata
CPC classification number: H04R3/06 , H04R19/005 , H04R19/01 , H04R19/04 , H04R29/004 , H04R2201/003
Abstract: Microphone distortion reduction is presented herein. A system can comprise: a processor; and a memory that stores executable instructions that, when executed by the processor, facilitate performance of operations, comprising: obtaining a pressure-in to voltage-out transfer function representing a distortion of an output of a microphone corresponding to a stimulus of a defined sound pressure level that has been applied to the microphone; inverting an equation representing the pressure-in to voltage-out transfer function to obtain an inverse transfer function; and applying the inverse transfer function to the output to obtain a linearized output representing the stimulus. In one example, the obtaining of the pressure-in to voltage-out transfer function comprises: creating an ideal sine wave stimulus comprising the amplitude and fundamental frequency of the time domain waveform; and generating the equation based on a defined relationship between the ideal sine wave stimulus and the time domain waveform.
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公开(公告)号：US20180091900A1
公开(公告)日：2018-03-29
申请号：US15280607
申请日：2016-09-29
Applicant: INVENSENSE, INC.
Inventor： Jeremy Parker , Sushil Bharatan , Erhan Polatkan Ata
CPC classification number: H04R3/06 , H04R19/005 , H04R19/01 , H04R19/04 , H04R29/004 , H04R2201/003
Abstract: Microphone distortion reduction is presented herein. A system can comprise: a processor; and a memory that stores executable instructions that, when executed by the processor, facilitate performance of operations, comprising: obtaining a pressure-in to voltage-out transfer function representing a distortion of an output of a microphone corresponding to a stimulus of a defined sound pressure level that has been applied to the microphone; inverting an equation representing the pressure-in to voltage-out transfer function to obtain an inverse transfer function; and applying the inverse transfer function to the output to obtain a linearized output representing the stimulus. In one example, the obtaining of the pressure-in to voltage-out transfer function comprises: creating an ideal sine wave stimulus comprising the amplitude and fundamental frequency of the time domain waveform; and generating the equation based on a defined relationship between the ideal sine wave stimulus and the time domain waveform.
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公开(公告)号：US09428379B2
公开(公告)日：2016-08-30
申请号：US14174639
申请日：2014-02-06
Applicant: InvenSense, Inc.
Inventor： Erhan Polatkan Ata , Martin Lim , Xiang Li , Stephen Lloyd , Michael Julian Daneman
CPC classification number: B81B7/0061 , B81B3/001 , B81B2201/0257 , B81B2203/053 , B81B2203/058 , B81B2207/012 , H04R19/005
Abstract: A MEMS device is disclosed. The MEMS device comprises a first plate with a first surface and a second surface; and an anchor attached to a first substrate. The MEMS device further includes a second plate with a third surface and a fourth surface attached to the first plate. A linkage connects the anchor to the first plate, wherein the first plate and second plate are displaced in the presence of an acoustic pressure differential between the first and second surfaces of the first plate. The first plate, second plate, linkage, and anchor are all contained in an enclosure formed by the first substrate and a second substrate, wherein one of the first and second substrates contains a through opening to expose the first surface of the first plate to the environment.
Abstract translation: 公开了MEMS器件。 MEMS器件包括具有第一表面和第二表面的第一板; 以及附接到第一基板的锚。 MEMS器件还包括具有附接到第一板的第三表面和第四表面的第二板。 连杆将锚固件连接到第一板，其中第一板和第二板在第一板的第一和第二表面之间存在声压差的情况下移位。 第一板，第二板，连杆和锚固件都包含在由第一基板和第二基板形成的外壳中，其中第一和第二基板中的一个包含通孔，以将第一板的第一表面暴露于 环境。
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8.发明申请METHOD FOR MEMS STRUCTURE WITH DUAL-LEVEL STRUCTURAL LAYER AND ACOUSTIC PORT 有权具有双层结构层和声学端口的MEMS结构的方法公开(公告)号：US20160083247A1
公开(公告)日：2016-03-24
申请号：US14957562
申请日：2015-12-02
Applicant: Invensense, Inc.
Inventor： Michael Julian Daneman , Mei-Lin Chan , Martin Lim , Fariboz Assaderaghi , Erhan Polatkan Ata
IPC: B81C1/00
CPC classification number: B81C1/00246 , B81B2201/0257 , B81B2201/0264 , B81B2203/0127 , B81B2207/012 , B81C1/00158 , B81C2201/112 , B81C2203/0118 , B81C2203/0742 , B81C2203/0792 , H01L2224/83805
Abstract: A method for fabricating a MEMS device includes depositing and patterning a first sacrificial layer onto a silicon substrate, the first sacrificial layer being partially removed leaving a first remaining oxide. Further, the method includes depositing a conductive structure layer onto the silicon substrate, the conductive structure layer making physical contact with at least a portion of the silicon substrate. Further, a second sacrificial layer is formed on top of the conductive structure layer. Patterning and etching of the silicon substrate is performed stopping at the second sacrificial layer. Additionally, the MEMS substrate is bonded to a CMOS wafer, the CMOS wafer having formed thereupon a metal layer. An electrical connection is formed between the MEMS substrate and the metal layer.
Abstract translation: 一种用于制造MEMS器件的方法包括将第一牺牲层沉积并图案化到硅衬底上，第一牺牲层被部分去除留下第一剩余氧化物。 此外，该方法包括在硅衬底上沉积导电结构层，导电结构层与硅衬底的至少一部分进行物理接触。 此外，在导电结构层的顶部上形成第二牺牲层。 在第二牺牲层停止硅衬底的图案化和蚀刻。 此外，MEMS衬底被结合到CMOS晶片，其上形成有金属层的CMOS晶片。 在MEMS衬底和金属层之间形成电连接。
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9.发明申请METHOD FOR MEMS STRUCTURE WITH DUAL-LEVEL STRUCTURAL LAYER AND ACOUSTIC PORT 有权具有双层结构层和声学端口的MEMS结构的方法公开(公告)号：US20140239353A1
公开(公告)日：2014-08-28
申请号：US14084569
申请日：2013-11-19
Applicant: Invensense, Inc.
Inventor： Michael Julian Daneman , Mei-Lin Chan , Martin Lim , Fariboz Assaderaghi , Erhan Polatkan Ata
CPC classification number: B81C1/00246 , B81B2201/0257 , B81B2201/0264 , B81B2203/0127 , B81B2207/012 , B81C1/00158 , B81C2201/112 , B81C2203/0118 , B81C2203/0742 , B81C2203/0792 , H01L2224/83805
Abstract: A method for fabricating a MEMS device includes depositing and patterning a first sacrificial layer onto a silicon substrate, the first sacrificial layer being partially removed leaving a first remaining oxide. Further, the method includes depositing a conductive structure layer onto the silicon substrate, the conductive structure layer making physical contact with at least a portion of the silicon substrate. Further, a second sacrificial layer is formed on top of the conductive structure layer. Patterning and etching of the silicon substrate is performed stopping at the second sacrificial layer. Additionally, the MEMS substrate is bonded to a CMOS wafer, the CMOS wafer having formed thereupon a metal layer. An electrical connection is formed between the MEMS substrate and the metal layer.
Abstract translation: 一种用于制造MEMS器件的方法包括将第一牺牲层沉积并图案化到硅衬底上，第一牺牲层被部分去除留下第一剩余氧化物。 此外，该方法包括在硅衬底上沉积导电结构层，导电结构层与硅衬底的至少一部分进行物理接触。 此外，在导电结构层的顶部上形成第二牺牲层。 在第二牺牲层停止硅衬底的图案化和蚀刻。 此外，MEMS衬底被结合到CMOS晶片，其上形成有金属层的CMOS晶片。 在MEMS衬底和金属层之间形成电连接。
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