摘要:
The present invention is an image recording material characterized in that it contains (a) a compound that is decomposed by light or heat and produces an acid, (b) a crosslinking agent that crosslinks in the presence of an acid, (c) a high-polymer compound insoluble in water but soluble in an alkali aqueous solution, and (d) the anionic infrared absorbing agent expressed by general formula (I) or general formula (II) below. In the formulas, M represents a conjugated chain, Ga− represents an anionic substituent, Gb represents a neutral substituent, Xm+1 represents a hydrogen ion or a cation of m valence, and m represents an integer from 1 to 6.
摘要:
A semiconductor memory includes at least one memory cell composed of an insulated gate field effect transistor and an associated stacked capacitor which are formed close to each other on a single substrate of a first conduction type. The insulated gate field effect transistor has a source and a drain which are located separately from each other in the single substrate and formed of impurity regions of a second conduction type opposite to the first conduction type. The insulated gate field effect transistor also has a gate formed through a gate insulator on a region between the source and the drain. The gate and the source of the insulated gate field effect transistor are connected to a word line and a bit line, respectively, and the drain of the insulated gate field effect transistor is connected to a first electrode of the stacked capacitor. The memory cell also comprises a first impurity region of the first conduction type formed in the substrate below the stacked capacitor, and a second impurity region of the second conduction type which is formed above the first impurity region in the substrate below the stacked capacitor and which has a junction depth shallower than the depth of the first impurity region, so that a pn junction is formed between the first impurity region and the second impurity region. The second impurity region is connected to the first electrode of the stacked capacitor. With this arrangement, the memory cell has a cell capacitance of based on a sum of a capacitance of the stacked capacitor and a junction capacitance of the pn junction.
摘要:
A machine for connecting an end of an optical fiber cable (1) to an optical fiber connector (2) comprises a stripping mechanism (10) that strips an end of a jacket (1b) from an end of the optical fiber cable (1) to expose an end of a fiber core (1a), a connector-connecting mechanism (30) which inserts the stripped end of the optical fiber cable (1) into a hole (2a) in the optical fiber connector (2) and connects the cable (1) with the connector (2), a core-cutting mechanism (60) which cuts the length of the fiber core (1a) protruding from the front end of the connector (2) leaving a tiny length of protruding fiber core (1a), and a core-finishing mechanism (70) which finishes the end surface of the protruding tiny length of fiber core (1a).
摘要:
A liquid crystal cell is disclosed which comprises a pair of opposed substrates defining a space therebetween and each having one or more electrodes disposed thereon, and a liquid crystal material provided in the space, the liquid crystal material being a lyotropic liquid crystal composition containing water and a polymeric electrolyte dissolved in the water in an amount sufficient to form a liquid crystal phase.
摘要:
An end-processing device for an optical fiber (42) comprises a housing (3, 4) having a receiving recess (10) extending from a front wall (23) to the other end, an aperture (14) located in the front wall (23), a heat conductive plate member (15) mounted on a front surface of the housing (3), pushing means (17, 22) mounted on the optical fiber (42) and in the receiving recess (10) for pushing the optical fiber end toward the heat conductive plate member (15), a reference surface (16) at the front wall (23) to regulate the final movement of the optical fiber (42), the plate member (15) being selectively coupled to a heating means (30) for processing the end of the optical fiber.
摘要:
A cable connector (10,10') for holding a cable (2) against axial movement is disclosed. The connector 10,10') includes a housing (4) and a clamping member (6,7,8,9). The cable (2) passes through the housing (4) in an opening (40) which is intersected normally by slots (41) into which the clamping member (6,7,8,9) is inserted to receive the cable (2) in recesses (62,72,82,92) defined by pairs of legs (61,71,81,91) of the clamping member (6,7,8,9).
摘要:
According to one embodiment, an energy storage apparatus includes a DC/DC convertor including a discharge terminal and a charge terminal, the DC/DC convertor which sets up a voltage of a DC power supplied from the discharge terminal and outputs the DC power from the charge terminal, switches which switch connections between a rechargeable batteries and a first connection terminal electrically connected to an external device, a second connection terminal electrically connected to the discharge terminal, and a third connection terminal electrically connected to the charge terminal, and a controller which controls the DC/DC convertor to perform charge and discharge between a rechargeable battery connected to the discharge terminal via the switches and a rechargeable battery connected to the charge terminal via the switches,
摘要:
A new polyurethane as well as a process for preparing same is disclosed. The new polyurethane contains therein a hard segment derived from at least one polyhydroxy substance selected from the group consisting of cellulosic substances, hemi-cellulosic substances and lignic substances, and is excellent in mechanical and thermal characteristics as compared with the existing polyurethanes. The new polyurethane can be prepared according to a method known per se, using the polyhydroxy substance alone or in mixture with a polyol compound as reactants to be polycondensed with a polyisocyanate.
摘要:
A semiconductor memory cell of a single field effect transistor and a single capacitor is surrounded or delimited at its three sides in the plan view by grooves formed in a semiconductor substrate. The capacitor in each memory cell is formed on one side wall surface or both side wall surfaces of this groove. With such construction, an increase in a capacitance can be achieved and a degree of circuit integration can be enhanced in distinction from the case where a groove is provided within an active region, that is, within a plan region of a capacitor section.
摘要:
Pressure variation of combustion noise is detected by a microphone set in a combustion chamber, and the pressure propagation characteristic for the path from the gas flow control valve to the microphone is identified while the combustion apparatus is operating, and then an adaptive control is made using one signal detected by an microphone and the other signal produced by passing the signal of the microphone through a filter, and then a corrected anti-phase signal of a combustion noise is computed by the coefficient updating circuit, and the computed result is inputted to a gas flow control valve.