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    Semiconductor device and method for producing the same
    6.
    发明授权
    Semiconductor device and method for producing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US06671301B1

    公开(公告)日：2003-12-30

    申请号：US09565937

    申请日：2000-05-05

    申请人： Toshikazu Onishi ,  Hideto Adachi ,  Masaya Mannou ,  Akira Takamori

    发明人： Toshikazu Onishi ,  Hideto Adachi ,  Masaya Mannou ,  Akira Takamori

    IPC分类号： H01S500

    CPC分类号： B82Y20/00 ,  H01S5/162 ,  H01S5/2231 ,  H01S5/3425 ,  H01S5/34326

    摘要： A semiconductor laser device including: a semiconductor substrate of a first conductivity type; a cladding layer of the first conductivity type provided on the semiconductor substrate; an active layer provided on the cladding layer of the first conductivity type, the active layer having a super-lattice structure including a disordered region in a vicinity of at least one cavity end face; a first cladding layer of a second conductivity type provided on the active layer; an etching stop layer of the second conductivity type provided on the first cladding layer; and a second cladding layer of the second conductivity type provided on the etching stop layer, the second cladding layer forming a ridge structure, the ridge structure extending along a cavity length direction and having a predetermined width. A concentration of an impurity in the etching stop layer in the vicinity of the at least one cavity end face is greater than a concentration of the impurity in the interior of a cavity and equal to or smaller than about 2×1018 cm−3.

    摘要翻译： 一种半导体激光器件，包括：第一导电类型的半导体衬底; 设置在半导体衬底上的第一导电类型的覆层; 设置在所述第一导电类型的包覆层上的有源层，所述有源层具有在至少一个腔端面附近包括无序区域的超晶格结构; 设置在有源层上的第二导电类型的第一包层; 设置在第一包层上的第二导电类型的蚀刻停止层; 以及设置在所述蚀刻停止层上的所述第二导电类型的第二包层，所述第二包层形成脊结构，所述脊结构沿着空腔长度方向延伸并具有预定宽度。 在至少一个空腔端面附近的蚀刻停止层中的杂质浓度大于空腔内的杂质的浓度，并且等于或小于约2×10 18 cm -3 >。

    Semiconductor device and method for producing the same
    7.
    发明授权
    Semiconductor device and method for producing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US07037743B2

    公开(公告)日：2006-05-02

    申请号：US10699986

    申请日：2003-11-03

    申请人： Toshikazu Onishi ,  Hideto Adachi ,  Masaya Mannou ,  Akira Takamori

    发明人： Toshikazu Onishi ,  Hideto Adachi ,  Masaya Mannou ,  Akira Takamori

    IPC分类号： H01L21/00 ,  H01S5/00

    CPC分类号： B82Y20/00 ,  H01S5/162 ,  H01S5/2231 ,  H01S5/3425 ,  H01S5/34326

    摘要： A semiconductor laser device is provided that includes a first conductivity type semiconductor substrate, a first conductivity type cladding layer provided on the semiconductor substrate and an active layer provided on the cladding layer. The active layer has a super-lattice structure including a disordered region in a vicinity of a cavity end face. A first cladding layer of a second conductivity type is provided on the active layer, an etching stop layer of the second conductivity type is provided on the first cladding layer and a second cladding layer of the second conductivity type is provided on the etching stop layer. The second cladding layer forms a ridge structure that extends along a cavity length direction. An impurity concentration in the etching stop layer in the vicinity of the cavity end face is equal to or smaller than about 2×1018 cm−3.

    摘要翻译： 提供一种半导体激光器件，其包括第一导电类型半导体衬底，设置在半导体衬底上的第一导电类型覆层和设置在包覆层上的有源层。 有源层具有包括空腔端面附近的无序区域的超晶格结构。 在有源层上设置有第二导电类型的第一包层，在第一包层上设置第二导电类型的蚀刻阻挡层，在蚀刻停止层上设置第二导电类型的第二包覆层。 第二包层形成沿着空腔长度方向延伸的脊结构。 在腔体端面附近的蚀刻停止层中的杂质浓度等于或小于约2×10 18 cm -3 -3。

    Manufacturing method of semiconductor multi-layer film and semiconductor laser
    8.
    发明授权
    Manufacturing method of semiconductor multi-layer film and semiconductor laser 失效
    半导体多层膜和半导体激光器的制造方法

    公开(公告)号：US5270246A

    公开(公告)日：1993-12-14

    申请号：US901765

    申请日：1992-06-17

    申请人： Masaya Mannou ,  Kiyoshi Onaka

    发明人： Masaya Mannou ,  Kiyoshi Onaka

    IPC分类号： H01L21/20 ,  H01S5/223 ,  H01S5/30 ,  H01S5/323

    CPC分类号： H01S5/305 ,  H01L21/02395 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01S5/32325 ,  H01S5/2231

    摘要： When an n-type semiconductor layer is formed on a p-type semiconductor layer in a device such as a semiconductor multi-layer film, the n-type semiconductor layer is formed by adding a p-type dopant as well as an n-type dopant simultaneously. In a double heterostructure semiconductor laser including an AlGaInP active layer and AlGaInP cladding layers, when an n-type current blocking layer is formed on the p-type cladding layer, the n-type current blocking layer is formed by adding a p-type dopant as well as an n-type dopant simultaneously.

    摘要翻译： 当半导体多层膜等器件中的p型半导体层上形成n型半导体层时，通过添加p型掺杂剂以及n型半导体层形成n型半导体层， 同时掺杂。 在包括AlGaInP有源层和AlGaInP包层的双异质结构半导体激光器中，当在p型覆层上形成n型电流阻挡层时，通过添加p型掺杂剂形成n型电流阻挡层 以及n型掺杂剂。

    Semiconductor laser device and method for producing the same
    9.
    发明授权
    Semiconductor laser device and method for producing the same 有权
    半导体激光装置及其制造方法

    公开(公告)号：US06590918B1

    公开(公告)日：2003-07-08

    申请号：US09713175

    申请日：2000-11-15

    申请人： Masaya Mannou ,  Toshiya Fukuhisa

    发明人： Masaya Mannou ,  Toshiya Fukuhisa

    IPC分类号： H01S319

    CPC分类号： B82Y20/00 ,  H01S5/162 ,  H01S5/2059 ,  H01S5/2068 ,  H01S5/2231 ,  H01S5/3413

    摘要： A method for producing a semiconductor laser element includes steps of: forming a semiconductor layered structure on a first conductivity type semiconductor substrate, the semiconductor layered structure including a first conductivity type cladding layer, a quantum well active layer, and a first cladding layer of a second conductivity type; forming a diffusion control layer in a predetermined region on the semiconductor layered structure; forming a material layer which acts as an impurity source on the diffusion control layer; and diffusing impurities by a first thermal treatment from the material layer through the diffusion control layer into at least a part of the semiconductor layered structure including at least a part of the quantum well active layer, thereby forming an impurity diffusion region, wherein a part of the quantum well active layer in at least one cavity end face is disordered by diffusion of the impurities.

    摘要翻译： 一种制造半导体激光元件的方法包括以下步骤：在第一导电型半导体衬底上形成半导体层叠结构，所述半导体层叠结构包括第一导电型包覆层，量子阱活性层和第一包层 第二导电类型; 在所述半导体层叠结构的规定区域内形成扩散控制层; 在扩散控制层上形成充当杂质源的材料层; 并且通过第一热处理将杂质从材料层通过扩散控制层扩散到至少包括量子阱有源层的至少一部分的半导体层状结构的一部分中，从而形成杂质扩散区，其中一部分 在至少一个空腔端面中的量子阱活性层由于杂质的扩散而紊乱。