摘要:
A light emitting device according to one embodiment includes a light emitting element that emits light having a wavelength of 380 nm to 470 nm; a CASN first red phosphor that is disposed on the light emitting element; a sialon second red phosphor that is disposed on the light emitting element; and a sialon green phosphor that is disposed on the light emitting element.
摘要:
A light emitting device according to one embodiment includes a light emitting element that emits light having a wavelength of 380 nm to 470 nm; a CASN first red phosphor that is disposed on the light emitting element; a sialon second red phosphor that is disposed on the light emitting element; and a sialon green phosphor that is disposed on the light emitting element.
摘要:
A light emitting device according to one embodiment includes a light emitting element that emits light having a wavelength of 380 nm to 470 nm; a CASN first red phosphor that is disposed on the light emitting element; a sialon second red phosphor that is disposed on the light emitting element; and a sialon green phosphor that is disposed on the light emitting element.
摘要:
A light emitting device according to one embodiment includes a light emitting element that emits light having a wavelength of 380 nm to 470 nm; a CASN first red phosphor that is disposed on the light emitting element; a sialon second red phosphor that is disposed on the light emitting element; and a sialon green phosphor that is disposed on the light emitting element.
摘要:
According to one embodiment, the luminescent material shows a luminescence peak in a wavelength range of 570 to 670 nm when excited with light having an emission peak in a wavelength range of 250 to 520 nm. The luminescent material includes a host material having a crystal structure substantially same as the crystal structure of Sr2Si7Al3ON13. The host material is activated by Eu, and includes Sr and Ca to satisfy a relationship of 0.008≦MCa/(MSr+MCa)≦0.114, where MCa is a number of moles of Ca and MSr is a number of moles of Sr.
摘要翻译:根据一个实施方案,发光材料在具有在250至520nm的波长范围内的发光峰的光激发时,显示在570至670nm的波长范围内的发光峰。 发光材料包括具有与Sr 2 Si 7 Al 3 ON 13的晶体结构基本相同的晶体结构的主体材料。 主体材料由Eu活化,包括Sr和Ca,以满足关系:0.008@MCa/(MSr + MCa)@ 0.114,其中MCa是Ca的摩尔数,MSr是Sr的摩尔数。
摘要:
According to one embodiment, the luminescent material shows a luminescence peak in a wavelength range of 570 to 670 nm when excited with light having an emission peak in a wavelength range of 250 to 520 nm. The luminescent material includes a host material having a crystal structure substantially same as the crystal structure of Sr2Si7Al3ON13. The host material is activated by Eu, and includes Sr and Ca to satisfy a relationship of 0.008≦MCa/(MSr+MCa)≦0.114, where MCa is a number of moles of Ca and MSr is a number of moles of Sr.
摘要翻译:根据一个实施方案,发光材料在具有在250至520nm的波长范围内的发光峰的光激发时,显示在570至670nm的波长范围内的发光峰。 发光材料包括具有与Sr 2 Si 7 Al 3 ON 13的晶体结构基本相同的晶体结构的主体材料。 主体材料由Eu活化,包括Sr和Ca,以满足0.008&nlE的关系; MCa /(MSr + MCa)≦̸ 0.114,其中MCa是Ca的摩尔数,MSr是Sr的摩尔数 。
摘要:
The embodiment provides a process for production of an oxynitride fluorescent substance. An compound containing In or Ga is adopted in the process as a material thereof. The red fluorescent substance produced by the process can be combined with a semiconductor light-emitting element, so as to be used in a light-emitting device or a light-emitting module.
摘要:
The embodiment provides a process for production of an oxynitride fluorescent substance. An compound containing In or Ga is adopted in the process as a material thereof. The red fluorescent substance produced by the process can be combined with a semiconductor light-emitting element, so as to be used in a light-emitting device or a light-emitting module.
摘要:
According to one embodiment, a light emitting device includes a semiconductor light emitting element to emit a first light, a mounting member, first and second wavelength conversion layers and a transparent layer. The first wavelength conversion layer is provided between the element and the mounting member in contact with the mounting member. The first wavelength conversion layer absorbs the first light and emits a second light having a wavelength longer than a wavelength of the first light. The semiconductor light emitting element is disposed between the second wavelength conversion layer and the first wavelength conversion layer. The second wavelength conversion layer absorbs the first light and emits a third light having a wavelength longer than the wavelength of the first light. The transparent layer is provided between the element and the second wavelength conversion layer. The transparent layer is transparent to the first, second, and third lights.
摘要:
According to one embodiment, a light emitting device includes a semiconductor light emitting element to emit a first light, a mounting member, first and second wavelength conversion layers and a transparent layer. The first wavelength conversion layer is provided between the element and the mounting member in contact with the mounting member. The first wavelength conversion layer absorbs the first light and emits a second light having a wavelength longer than a wavelength of the first light. The semiconductor light emitting element is disposed between the second wavelength conversion layer and the first wavelength conversion layer. The second wavelength conversion layer absorbs the first light and emits a third light having a wavelength longer than the wavelength of the first light. The transparent layer is provided between the element and the second wavelength conversion layer. The transparent layer is transparent to the first, second, and third lights.