公开(公告)号：US20120056526A1

公开(公告)日：2012-03-08

申请号：US13034120

申请日：2011-02-24

申请人： Iwao MITSUISHI ,  Shinya Nunoue ,  Takahiro Sato ,  Yumi Fukuda ,  Aoi Okada ,  Naotoshi Matsuda ,  Toshiki Hikosaka

发明人： Iwao MITSUISHI ,  Shinya Nunoue ,  Takahiro Sato ,  Yumi Fukuda ,  Aoi Okada ,  Naotoshi Matsuda ,  Toshiki Hikosaka

IPC分类号： H01J1/62

CPC分类号： C09K11/7734 ,  C09K11/0883 ,  H01L33/502 ,  H01L33/504 ,  H01L33/505 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light emitting device according to one embodiment includes a light emitting element that emits light having a wavelength of 380 nm to 470 nm; a CASN first red phosphor that is disposed on the light emitting element; a sialon second red phosphor that is disposed on the light emitting element; and a sialon green phosphor that is disposed on the light emitting element.

公开(公告)号：US08310145B2

公开(公告)日：2012-11-13

申请号：US13034120

申请日：2011-02-24

申请人： Iwao Mitsuishi ,  Shinya Nunoue ,  Takahiro Sato ,  Yumi Fukuda ,  Aoi Okada ,  Naotoshi Matsuda ,  Toshiki Hikosaka

发明人： Iwao Mitsuishi ,  Shinya Nunoue ,  Takahiro Sato ,  Yumi Fukuda ,  Aoi Okada ,  Naotoshi Matsuda ,  Toshiki Hikosaka

IPC分类号： H01J1/62 ,  H01L33/50

CPC分类号： C09K11/7734 ,  C09K11/0883 ,  H01L33/502 ,  H01L33/504 ,  H01L33/505 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light emitting device according to one embodiment includes a light emitting element that emits light having a wavelength of 380 nm to 470 nm; a CASN first red phosphor that is disposed on the light emitting element; a sialon second red phosphor that is disposed on the light emitting element; and a sialon green phosphor that is disposed on the light emitting element.

摘要翻译： 根据一个实施例的发光器件包括发射波长为380nm至470nm的光的发光元件; 设置在发光元件上的CASN第一红色荧光体; 设置在发光元件上的赛隆第二红色磷光体; 以及设置在发光元件上的赛隆绿荧光体。

公开(公告)号：US08471277B2

公开(公告)日：2013-06-25

申请号：US13214377

申请日：2011-08-22

申请人： Iwao Mitsuishi ,  Shinya Nunoue ,  Takahiro Sato ,  Yumi Fukuda ,  Aoi Okada ,  Naotoshi Matsuda ,  Toshiki Hikosaka ,  Keiko Albessard ,  Masahiro Kato

发明人： Iwao Mitsuishi ,  Shinya Nunoue ,  Takahiro Sato ,  Yumi Fukuda ,  Aoi Okada ,  Naotoshi Matsuda ,  Toshiki Hikosaka ,  Keiko Albessard ,  Masahiro Kato

IPC分类号： H01L29/20 ,  H01L33/00 ,  H01J1/62

CPC分类号： H01L33/504 ,  C09K11/0883 ,  C09K11/7734 ,  H01L33/505 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light emitting device according to one embodiment includes a light emitting element that emits light having a wavelength of 380 nm to 470 nm; a CASN first red phosphor that is disposed on the light emitting element; a sialon second red phosphor that is disposed on the light emitting element; and a sialon green phosphor that is disposed on the light emitting element.

摘要翻译： 根据一个实施例的发光器件包括发射波长为380nm至470nm的光的发光元件; 设置在发光元件上的CASN第一红色荧光体; 设置在发光元件上的赛隆第二红色磷光体; 以及设置在发光元件上的赛隆绿荧光体。

公开(公告)号：US20120056224A1

公开(公告)日：2012-03-08

申请号：US13214377

申请日：2011-08-22

申请人： Iwao MITSUISHI ,  Shinya Nunoue ,  Takahiro Sato ,  Yumi Fukuda ,  Aoi Okada ,  Naotoshi Matsuda ,  Toshiki Hikosaka ,  Keiko Albessard ,  Masahiro Kato

发明人： Iwao MITSUISHI ,  Shinya Nunoue ,  Takahiro Sato ,  Yumi Fukuda ,  Aoi Okada ,  Naotoshi Matsuda ,  Toshiki Hikosaka ,  Keiko Albessard ,  Masahiro Kato

IPC分类号： H01L33/50

CPC分类号： H01L33/504 ,  C09K11/0883 ,  C09K11/7734 ,  H01L33/505 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light emitting device according to one embodiment includes a light emitting element that emits light having a wavelength of 380 nm to 470 nm; a CASN first red phosphor that is disposed on the light emitting element; a sialon second red phosphor that is disposed on the light emitting element; and a sialon green phosphor that is disposed on the light emitting element.

摘要翻译： 根据一个实施例的发光器件包括发射波长为380nm至470nm的光的发光元件; 设置在发光元件上的CASN第一红色荧光体; 设置在发光元件上的赛隆第二红色磷光体; 以及设置在发光元件上的赛隆绿荧光体。

公开(公告)号：US20130234585A1

公开(公告)日：2013-09-12

申请号：US13601070

申请日：2012-08-31

申请人： Keiko Albessard ,  Masahiro Kato ,  Yumi Fukuda ,  Iwao Mitsuishi ,  Takahiro Sato ,  Shigeya Kimura ,  Aoi Okada ,  Naotoshi Matsuda ,  Ryosuke Hiramatsu ,  Yasushi Hattori ,  Kunio Ishida ,  Hironori Asai

发明人： Keiko Albessard ,  Masahiro Kato ,  Yumi Fukuda ,  Iwao Mitsuishi ,  Takahiro Sato ,  Shigeya Kimura ,  Aoi Okada ,  Naotoshi Matsuda ,  Ryosuke Hiramatsu ,  Yasushi Hattori ,  Kunio Ishida ,  Hironori Asai

IPC分类号： C09K11/77 ,  H05B33/12

CPC分类号： C09K11/7734 ,  H01L33/502 ,  H01L33/504 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/181 ,  H05B33/12 ,  H01L2924/00012 ,  H01L2924/00014

摘要： According to one embodiment, the luminescent material shows a luminescence peak in a wavelength range of 570 to 670 nm when excited with light having an emission peak in a wavelength range of 250 to 520 nm. The luminescent material includes a host material having a crystal structure substantially same as the crystal structure of Sr2Si7Al3ON13. The host material is activated by Eu, and includes Sr and Ca to satisfy a relationship of 0.008≦MCa/(MSr+MCa)≦0.114, where MCa is a number of moles of Ca and MSr is a number of moles of Sr.

摘要翻译： 根据一个实施方案，发光材料在具有在250至520nm的波长范围内的发光峰的光激发时，显示在570至670nm的波长范围内的发光峰。 发光材料包括具有与Sr 2 Si 7 Al 3 ON 13的晶体结构基本相同的晶体结构的主体材料。 主体材料由Eu活化，包括Sr和Ca，以满足关系：0.008@MCa/（MSr + MCa）@ 0.114，其中MCa是Ca的摩尔数，MSr是Sr的摩尔数。

公开(公告)号：US08974697B2

公开(公告)日：2015-03-10

申请号：US13601070

申请日：2012-08-31

申请人： Keiko Albessard ,  Masahiro Kato ,  Yumi Fukuda ,  Iwao Mitsuishi ,  Takahiro Sato ,  Shigeya Kimura ,  Aoi Okada ,  Naotoshi Matsuda ,  Ryosuke Hiramatsu ,  Yasushi Hattori ,  Kunio Ishida ,  Hironori Asai

发明人： Keiko Albessard ,  Masahiro Kato ,  Yumi Fukuda ,  Iwao Mitsuishi ,  Takahiro Sato ,  Shigeya Kimura ,  Aoi Okada ,  Naotoshi Matsuda ,  Ryosuke Hiramatsu ,  Yasushi Hattori ,  Kunio Ishida ,  Hironori Asai

IPC分类号： C09K11/59 ,  C09K11/77 ,  H05B33/12 ,  H01L33/50

CPC分类号： C09K11/7734 ,  H01L33/502 ,  H01L33/504 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/181 ,  H05B33/12 ,  H01L2924/00012 ,  H01L2924/00014

摘要： According to one embodiment, the luminescent material shows a luminescence peak in a wavelength range of 570 to 670 nm when excited with light having an emission peak in a wavelength range of 250 to 520 nm. The luminescent material includes a host material having a crystal structure substantially same as the crystal structure of Sr2Si7Al3ON13. The host material is activated by Eu, and includes Sr and Ca to satisfy a relationship of 0.008≦MCa/(MSr+MCa)≦0.114, where MCa is a number of moles of Ca and MSr is a number of moles of Sr.

摘要翻译： 根据一个实施方案，发光材料在具有在250至520nm的波长范围内的发光峰的光激发时，显示在570至670nm的波长范围内的发光峰。 发光材料包括具有与Sr 2 Si 7 Al 3 ON 13的晶体结构基本相同的晶体结构的主体材料。 主体材料由Eu活化，包括Sr和Ca，以满足0.008＆nlE的关系; MCa /（MSr + MCa）＆nlE; 0.114，其中MCa是Ca的摩尔数，MSr是Sr的摩尔数 。

公开(公告)号：US08552437B2

公开(公告)日：2013-10-08

申请号：US12875507

申请日：2010-09-03

申请人： Aoi Okada ,  Yumi Fukuda ,  Takahiro Sato ,  Iwao Mitsuishi ,  Naotoshi Matsuda ,  Ryosuke Hiramatsu ,  Kunio Ishida

发明人： Aoi Okada ,  Yumi Fukuda ,  Takahiro Sato ,  Iwao Mitsuishi ,  Naotoshi Matsuda ,  Ryosuke Hiramatsu ,  Kunio Ishida

IPC分类号： H01L33/16 ,  C09K11/08 ,  H01L33/40

CPC分类号： C09K11/7734 ,  H01L33/504 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

摘要： The embodiment provides a process for production of an oxynitride fluorescent substance. An compound containing In or Ga is adopted in the process as a material thereof. The red fluorescent substance produced by the process can be combined with a semiconductor light-emitting element, so as to be used in a light-emitting device or a light-emitting module.

摘要翻译： 本实施例提供了制造氮氧化物荧光物质的方法。 在该方法中采用含有In或Ga的化合物作为其材料。 通过该方法生产的红色荧光物质可以与半导体发光元件组合，以便用于发光器件或发光模块中。

公开(公告)号：US20110220919A1

公开(公告)日：2011-09-15

申请号：US12875507

申请日：2010-09-03

申请人： Aoi OKADA ,  Yumi Fukuda ,  Takahiro Sato ,  Iwao Mitsuishi ,  Naotoshi Matsuda ,  Ryosuke Hiramatsu ,  Kunio Ishida

发明人： Aoi OKADA ,  Yumi Fukuda ,  Takahiro Sato ,  Iwao Mitsuishi ,  Naotoshi Matsuda ,  Ryosuke Hiramatsu ,  Kunio Ishida

IPC分类号： H01L33/16 ,  C09K11/08 ,  H01L33/40

CPC分类号： C09K11/7734 ,  H01L33/504 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

摘要： The embodiment provides a process for production of an oxynitride fluorescent substance. An compound containing In or Ga is adopted in the process as a material thereof. The red fluorescent substance produced by the process can be combined with a semiconductor light-emitting element, so as to be used in a light-emitting device or a light-emitting module.

摘要翻译： 本实施例提供了制造氮氧化物荧光物质的方法。 在该方法中采用含有In或Ga的化合物作为其材料。 通过该方法生产的红色荧光物质可以与半导体发光元件组合，以便用于发光器件或发光模块中。

公开(公告)号：US20130069098A1

公开(公告)日：2013-03-21

申请号：US13677828

申请日：2012-11-15

申请人： Toshiki Hikosaka ,  Takahiro Sato ,  Iwao Mitsuishi ,  Shinya Nunoue

发明人： Toshiki Hikosaka ,  Takahiro Sato ,  Iwao Mitsuishi ,  Shinya Nunoue

IPC分类号： H01L33/50

CPC分类号： H01L33/50 ,  H01L24/29 ,  H01L24/32 ,  H01L33/44 ,  H01L33/504 ,  H01L33/58 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

摘要： According to one embodiment, a light emitting device includes a semiconductor light emitting element to emit a first light, a mounting member, first and second wavelength conversion layers and a transparent layer. The first wavelength conversion layer is provided between the element and the mounting member in contact with the mounting member. The first wavelength conversion layer absorbs the first light and emits a second light having a wavelength longer than a wavelength of the first light. The semiconductor light emitting element is disposed between the second wavelength conversion layer and the first wavelength conversion layer. The second wavelength conversion layer absorbs the first light and emits a third light having a wavelength longer than the wavelength of the first light. The transparent layer is provided between the element and the second wavelength conversion layer. The transparent layer is transparent to the first, second, and third lights.

摘要翻译： 根据一个实施例，发光器件包括发射第一光的半导体发光元件，安装构件，第一和第二波长转换层以及透明层。 第一波长转换层设置在与安装构件接触的元件和安装构件之间。 第一波长转换层吸收第一光并发射波长比第一光的波长长的第二光。 半导体发光元件设置在第二波长转换层和第一波长转换层之间。 第二波长转换层吸收第一光并发射波长比第一光的波长长的第三光。 透明层设置在元件和第二波长转换层之间。 透明层对于第一，第二和第三光是透明的。

公开(公告)号：US08368104B2

公开(公告)日：2013-02-05

申请号：US12874413

申请日：2010-09-02

申请人： Toshiki Hikosaka ,  Takahiro Sato ,  Iwao Mitsuishi ,  Shinya Nunoue

发明人： Toshiki Hikosaka ,  Takahiro Sato ,  Iwao Mitsuishi ,  Shinya Nunoue

IPC分类号： H01L33/00

CPC分类号： H01L33/50 ,  H01L24/29 ,  H01L24/32 ,  H01L33/44 ,  H01L33/504 ,  H01L33/58 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

摘要： According to one embodiment, a light emitting device includes a semiconductor light emitting element to emit a first light, a mounting member, first and second wavelength conversion layers and a transparent layer. The first wavelength conversion layer is provided between the element and the mounting member in contact with the mounting member. The first wavelength conversion layer absorbs the first light and emits a second light having a wavelength longer than a wavelength of the first light. The semiconductor light emitting element is disposed between the second wavelength conversion layer and the first wavelength conversion layer. The second wavelength conversion layer absorbs the first light and emits a third light having a wavelength longer than the wavelength of the first light. The transparent layer is provided between the element and the second wavelength conversion layer. The transparent layer is transparent to the first, second, and third lights.