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公开(公告)号:US20220393200A1
公开(公告)日:2022-12-08
申请号:US17772965
申请日:2020-10-23
Inventor: Takuya TSUJIGUCHI , Yasuhide TAKEDA , Atsushi KUBO , Akihiro TAKAZATO , Toshiyuki SAITO , Motoo NAKAI , Yusuke UEDA
IPC: H01M8/04186 , H01M8/04746 , H01M8/0668 , H01M8/1011
Abstract: A fuel cell system having a direct liquid fuel cell that uses a liquid containing a formic acid or an alcohol as a fuel includes: a fuel tank that stores the fuel to be supplied to the fuel cell; a fuel supply device that supplies the fuel in the fuel tank to the fuel cell; and a bubbling device that blows an inert gas into the fuel stored in the fuel tank.
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公开(公告)号:US20240322208A1
公开(公告)日:2024-09-26
申请号:US18259914
申请日:2022-01-07
Inventor: Takuya TSUJIGUCHI , Motoo NAKAI , Toshiyuki SAITO , Atsushi KUBO , Yasuhide TAKEDA , Mototake FURUHASHI , Tatsuma KOUCHI , Ayumi NAKASONE , Atsushi NAKANE
IPC: H01M8/04858 , H01M8/04223 , H01M8/04228 , H01M8/04303 , H01M8/04537 , H01M8/04746 , H01M8/04955 , H01M16/00
CPC classification number: H01M8/0494 , H01M8/04228 , H01M8/04231 , H01M8/04303 , H01M8/04559 , H01M8/04567 , H01M8/04589 , H01M8/04753 , H01M8/04947 , H01M8/04955 , H01M16/003
Abstract: A fuel cell system includes a fuel cell, an electric power recovery device, and a control device that controls the fuel cell and the electric power recovery device. In a state where supplying of the liquid fuel to the fuel cell is stopped, the control device charges post-stop electric power generated by the fuel cell using the liquid fuel that has been already supplied, thereby recovering the post-stop electric power into the electric power recovery device, and thereafter stopping an electrode reaction in an electrode structure of the fuel cell.
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公开(公告)号:US20230275243A1
公开(公告)日:2023-08-31
申请号:US18005724
申请日:2021-08-25
Inventor: Takuya TSUJIGUCHI , Yasuhide TAKEDA , Motoo NAKAI , Toshiyuki SAITO , Atsushi KUBO , Mototake FURUHASHI , Ayumi NAKASONE , Atsushi NAKANE , Fumitaka ACHIWA
IPC: H01M8/04291 , H01M8/0258 , H01M8/04186 , H01M8/1009
CPC classification number: H01M8/04291 , H01M8/0258 , H01M8/04186 , H01M8/1009 , H01M2008/1095
Abstract: A fuel cell includes a discharge structure that discharges water generated in a cathode electrode in association with an electrode reaction in the MEA to the outside. The discharge structure includes a discharge path through which air that is an oxidant flows, a passage that communicably connects an oxidant supply flow path and the discharge path and that moves water generated in the cathode electrode to the discharge path, and a discharge portion that discharges the generated water moved to the discharge path to the outside.
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公开(公告)号:US20150295044A1
公开(公告)日:2015-10-15
申请号:US14681779
申请日:2015-04-08
Applicant: JTEKT CORPORATION
Inventor: Yasuhide TAKEDA , Yasuyuki WAKITA
IPC: H01L29/06 , H01L29/739 , H01L29/423 , H01L29/78
CPC classification number: H01L29/0696 , H01L24/05 , H01L24/06 , H01L24/48 , H01L24/49 , H01L24/73 , H01L29/1095 , H01L29/4236 , H01L29/42372 , H01L29/4238 , H01L29/66704 , H01L29/7395 , H01L29/7397 , H01L29/78 , H01L29/7802 , H01L29/7813 , H01L2224/04042 , H01L2224/05555 , H01L2224/0603 , H01L2224/32225 , H01L2224/48227 , H01L2224/48472 , H01L2224/49111 , H01L2224/49175 , H01L2224/73265 , H01L2924/00014 , H01L2924/10156 , H01L2924/10162 , H01L2924/13055 , H01L2924/13091 , H01L2224/45099 , H01L2924/00012 , H01L2924/00
Abstract: A gate pad is disposed on a semiconductor layer composed of an n+ type substrate, an n− type epitaxial layer, and a p− type body layer. The gate pad is disposed at the center portion of the semiconductor layer as viewed in plan. A plurality of unit cells that compose a trench type MOSFET element are provided in the semiconductor layer. The plurality of unit cells are arranged in the radial direction about the gate pad as viewed in plan. A gate electrode of a unit cell (center-side unit cell) that is proximate to the gate pad is electrically connected to the gate pad. Gate electrodes of unit cells that are adjacent to each other in the radial direction are connected to each other.
Abstract translation: 栅极焊盘设置在由n +型衬底,n型外延层和p-型体层构成的半导体层上。 栅极焊盘设置在半导体层的中心部分,如平面图所示。 构成沟槽型MOSFET元件的多个单电池设置在半导体层中。 在平面图中看到,多个单电池以围绕栅极焊盘的径向方向布置。 靠近栅极焊盘的单元电池(中心侧单元电池)的栅极电连接到栅极焊盘。 在径向上彼此相邻的单元电池的栅电极彼此连接。
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公开(公告)号:US20150295043A1
公开(公告)日:2015-10-15
申请号:US14681662
申请日:2015-04-08
Applicant: JTEKT CORPORATION
Inventor: Yasuhide TAKEDA , Yasuyuki WAKITA , Masaya SEGAWA , Shigeki NAGASE
IPC: H01L29/06 , H01L29/739 , H01L29/78
CPC classification number: H01L29/0696 , H01L24/05 , H01L24/06 , H01L24/48 , H01L24/49 , H01L24/73 , H01L29/4236 , H01L29/42372 , H01L29/4238 , H01L29/66704 , H01L29/66734 , H01L29/7395 , H01L29/7397 , H01L29/78 , H01L29/7802 , H01L29/7813 , H01L2224/04042 , H01L2224/05555 , H01L2224/0603 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/49111 , H01L2224/49175 , H01L2224/73265 , H01L2924/00014 , H01L2924/10156 , H01L2924/13055 , H01L2924/13091 , H01L2924/00012 , H01L2224/45099 , H01L2924/00
Abstract: A gate pad and a source pad are disposed on a semiconductor layer. The gate pad is disposed at the center portion of the semiconductor layer and has the shape of a circle centered on the center of the semiconductor layer as viewed in plan. The source pad is disposed so as to surround the gate pad, and has the shape of a circular ring centered on the center of the semiconductor layer as viewed in plan. A plurality of unit cells that compose a trench type MOSFET element are formed in the semiconductor layer.
Abstract translation: 栅极焊盘和源焊盘设置在半导体层上。 栅极焊盘设置在半导体层的中心部分,并且如在平面图中所示,具有以半导体层的中心为中心的圆的形状。 源极焊盘被设置为围绕栅极焊盘,并且具有以平面图所示的以半导体层的中心为中心的圆环的形状。 在半导体层中形成构成沟槽型MOSFET元件的多个单电池。
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