公开(公告)号：US20140116798A1

公开(公告)日：2014-05-01

申请号：US14056167

申请日：2013-10-17

Applicant: JTEKT CORPORATION

Inventor： Shigeki NAGASE ,  Motoo NAKAI

IPC: H05K1/02 ,  B62D5/04

CPC classification number: H05K1/0298 ,  B62D5/0463 ,  H05K1/141 ,  H05K2201/10166

Abstract: A circuit board includes control circuit patterns and first drive circuit patterns. A base maintains the circuit board in a state in which the base is opposed to a portion of the circuit board, in which the control circuit patterns are formed, across a space that allows control circuit elements to be mounted at the circuit board. A line module includes second drive circuit patterns electrically connected to the first drive circuit patterns so as to constitute a part of lines of a drive circuit, and is sandwiched between a portion of the circuit board, in which the first drive circuit patterns are formed, and the base.

Abstract translation: 电路板包括控制电路图案和第一驱动电路图案。 基座将电路板保持在其中形成有控制电路图案的电路板的一部分的基底与允许控制电路元件安装在电路板上的空间相对的状态。 线路模块包括电连接到第一驱动电路图案的第二驱动电路图案，以构成驱动电路的一部分线，并且夹在其中形成第一驱动电路图案的电路板的一部分之间， 和基地。

公开(公告)号：US20130285513A1

公开(公告)日：2013-10-31

申请号：US13866179

申请日：2013-04-19

Applicant: JTEKT CORPORATION

Inventor： Naoki TANI ,  Shigeki NAGASE

IPC: H02K11/00 ,  H05K7/20

CPC classification number: H05K7/209 ,  H02K11/0094 ,  H02K11/04 ,  H02K11/042 ,  H02K11/049 ,  H02K11/05 ,  H02K11/33 ,  H02K11/38 ,  H02K29/00 ,  H05K7/2039

Abstract: A control device for a motor unit includes: a housing including a bottom wall, a side wall and an accommodation space formed so as to be surrounded by the side wall; a heat sink including a first heat dissipation wall portion upright from the bottom wall in the accommodation space, the first heat dissipation wall portion upright having a first heat dissipation principal surface; a first board portion mounted on the first heat dissipation principal surface and having a first principal surface; and a circuit board including a power element mounted on the first principal surface.

Abstract translation: 一种用于电动机单元的控制装置包括：壳体，包括底壁，侧壁和形成为被侧壁包围的容纳空间; 所述散热器包括从所述容纳空间的所述底壁竖立的第一散热壁部，所述第一散热壁部直立件具有第一散热主面; 安装在第一散热主表面上并具有第一主表面的第一板部分; 以及包括安装在第一主表面上的功率元件的电路板。

公开(公告)号：US20150295043A1

公开(公告)日：2015-10-15

申请号：US14681662

申请日：2015-04-08

Applicant: JTEKT CORPORATION

Inventor： Yasuhide TAKEDA ,  Yasuyuki WAKITA ,  Masaya SEGAWA ,  Shigeki NAGASE

IPC: H01L29/06 ,  H01L29/739 ,  H01L29/78

CPC classification number: H01L29/0696 ,  H01L24/05 ,  H01L24/06 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L29/4236 ,  H01L29/42372 ,  H01L29/4238 ,  H01L29/66704 ,  H01L29/66734 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/78 ,  H01L29/7802 ,  H01L29/7813 ,  H01L2224/04042 ,  H01L2224/05555 ,  H01L2224/0603 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/10156 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2924/00

Abstract: A gate pad and a source pad are disposed on a semiconductor layer. The gate pad is disposed at the center portion of the semiconductor layer and has the shape of a circle centered on the center of the semiconductor layer as viewed in plan. The source pad is disposed so as to surround the gate pad, and has the shape of a circular ring centered on the center of the semiconductor layer as viewed in plan. A plurality of unit cells that compose a trench type MOSFET element are formed in the semiconductor layer.

Abstract translation: 栅极焊盘和源焊盘设置在半导体层上。 栅极焊盘设置在半导体层的中心部分，并且如在平面图中所示，具有以半导体层的中心为中心的圆的形状。 源极焊盘被设置为围绕栅极焊盘，并且具有以平面图所示的以半导体层的中心为中心的圆环的形状。 在半导体层中形成构成沟槽型MOSFET元件的多个单电池。

公开(公告)号：US20150008534A1

公开(公告)日：2015-01-08

申请号：US14323382

申请日：2014-07-03

Applicant: JTEKT CORPORATION ,  DENSO CORPORATION

Inventor： Shigeki NAGASE ,  Kazuo TADA

IPC: H01L27/088

CPC classification number: H01L27/088 ,  H01L23/5389 ,  H01L24/19 ,  H01L25/074 ,  H01L2224/04105 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2924/0002 ,  H01L2924/13055 ,  H01L2924/00

Abstract: In a semiconductor device, each of a first connection metal member, a second connection metal member, a third connection metal member, and a fourth connection metal member electrically connects a corresponding line to a corresponding one of main electrodes formed on lower surfaces and upper surfaces of first and second semiconductor elements. A cross-sectional area of each of the first connection metal member, the second connection metal member, the third connection metal member, and the fourth connection metal member is larger than a cross-sectional area of a fifth connection metal member that is disposed at a region located outside regions of the first and second semiconductor elements in a plan view.

Abstract translation: 在半导体装置中，第一连接金属构件，第二连接金属构件，第三连接金属构件和第四连接金属构件中的每一个将对应的线电连接到形成在下表面和上表面上的对应的一个主电极 的第一和第二半导体元件。 第一连接金属构件，第二连接金属构件，第三连接金属构件和第四连接金属构件的横截面积大于设置在第一连接金属构件，第二连接金属构件和第四连接金属构件的第五连接金属构件的横截面积 在平面图中位于第一和第二半导体元件的区域外的区域。

公开(公告)号：US20130134817A1

公开(公告)日：2013-05-30

申请号：US13686498

申请日：2012-11-27

Applicant: JTEKT Corporation

Inventor： Takaya NAGAHAMA ,  Masami NAKA ,  Kouji KITAHATA ,  Yoshiyuki SHIBATA ,  Shigeki NAGASE ,  Takashi KAGEYAMA

IPC: H02K1/28 ,  H02K15/00 ,  H02K1/27

CPC classification number: H02K1/28 ,  H02K1/27 ,  H02K1/276 ,  H02K1/278 ,  H02K15/00 ,  H02K15/03 ,  Y10T29/49012

Abstract: At least part of each bridge portion is heated and molten to form a keyhole, and a nonmagnetic element is disposed around the keyhole. Thus, even when the width of the bridge portion in the radial direction is increased, the bridge portion is demagnetized. Therefore, leakage flux in the bridge portion is reduced, and the output power of a motor is increased. Moreover, by increasing the width of the bridge portion in the radial direction, the strength of the bridge portion is increased, and breakage of the bridge portion due to a centrifugal force at high-speed rotation of a rotor is prevented.

Abstract translation: 每个桥接部分的至少一部分被加热并熔融以形成锁孔，并且在锁孔周围设置非磁性元件。 因此，即使在桥接部的宽度方向上的宽度增大的情况下，桥接部也被退磁。 因此，桥接部的漏磁通减少，电动机的输出功率增大。 此外，通过增加桥接部分在径向方向上的宽度，桥接部分的强度增加，并且防止了由于转子高速旋转时的离心力引起的桥接部分的断裂。