摘要:
A non-planar transistor including partially melted raised semiconductor source/drains disposed on opposite ends of a semiconductor fin with the gate stack disposed there between. The raised semiconductor source/drains comprise a super-activated dopant region above a melt depth and an activated dopant region below the melt depth. The super-activated dopant region has a higher activated dopant concentration than the activated dopant region and/or has an activated dopant concentration that is constant throughout the melt region. A fin is formed on a substrate and a semiconductor material or a semiconductor material stack is deposited on regions of the fin disposed on opposite sides of a channel region to form raised source/drains. A pulsed laser anneal is performed to melt only a portion of the deposited semiconductor material above a melt depth.
摘要:
Laser anneal to melt regions of a microelectronic device buried under overlying materials, such as an interlayer dielectric (ILD). Melting temperature differentiation is employed to selectively melt a buried region. In embodiments a buried region is at least one of a gate electrode and a source/drain region. Laser anneal may be performed after contact formation with contact metal coupling energy into the buried layer for the anneal.
摘要:
A non-planar transistor including partially melted raised semiconductor source/drains disposed on opposite ends of a semiconductor fin with the gate stack disposed there between. The raised semiconductor source/drains comprise a super-activated dopant region above a melt depth and an activated dopant region below the melt depth. The super-activated dopant region has a higher activated dopant concentration than the activated dopant region and/or has an activated dopant concentration that is constant throughout the melt region. A fin is formed on a substrate and a semiconductor material or a semiconductor material stack is deposited on regions of the fin disposed on opposite sides of a channel region to form raised source/drains. A pulsed laser anneal is performed to melt only a portion of the deposited semiconductor material above a melt depth.
摘要:
Laser anneal to melt regions of a microelectronic device buried under overlying materials, such as an interlayer dielectric (ILD). Melting temperature differentiation is employed to selectively melt a buried region. In embodiments a buried region is at least one of a gate electrode and a source/drain region. Laser anneal may be performed after contact formation with contact metal coupling energy into the buried layer for the anneal.
摘要:
A system and method automatically configures the interfaces of an intermediate network device. A discovery process operating at the device detects the identity or type of network entities actually coupled to the device's interfaces. Utilizing the identity or type of detected entities, a look-up is performed to obtain a configuration macro specially defined for each detected network entity. The retrieved configuration macros are executed and applied at the respective interfaces. During operation, the intermediate network device continues to monitor the identity and type of entities actually coupled to its interfaces. If a change is detected, such as an entity moving from a first to a second interface, the specially defined configuration macro for that entity floats from the first to the second interface where it is executed and applied.
摘要:
Methods are disclosed for making a compound of nickel and silicon. According to an embodiment, on a surface of a substrate (e.g., silicon), multiple layer pairs are formed in a superposed manner. Each layer pair includes a respective layer of nickel and a respective layer of silicon each being 3 nm or less in thickness. The layers of nickel and silicon in the multiple layer pairs are formed in alternating order, thereby forming a multilayer structure, wherein the layers of nickel and silicon in the multilayer structure are formed at respective thicknesses corresponding to desired mole fractions of nickel and silicon in the multilayer structure. The multilayer structure is annealed at a temperature of 200° C. or less to form an amorphous alloy of nickel and silicon in the multilayer structure, wherein the alloy has the desired mole fractions of nickel and silicon. The amorphous alloy is allowed to nucleate and form a corresponding crystalline alloy having the desired mole fractions of nickel and silicon.
摘要:
A system and method automatically configures the interfaces of an intermediate network device. A discovery process operating at the device detects the identity or type of network entities actually coupled to the device's interfaces. Utilizing the identity or type of detected entities, a look-up is performed to obtain a configuration macro specially defined for each detected network entity. The retrieved configuration macros are executed and applied at the respective interfaces. During operation, the intermediate network device continues to monitor the identity and type of entities actually coupled to its interfaces. If a change is detected, such as an entity moving from a first to a second interface, the specially defined configuration macro for that entity floats from the first to the second interface where it is executed and applied.
摘要:
A communication apparatus has a first housing member (100) and a second housing member (200), which are mechanically interconnected so that said first housing member is foldable as well as turnable with respect to said second housing member so as to assume different operating positions. The communication apparatus has a user interface (334) including a display (110) and manual input means (120, 220), and a processing device (300) for providing services (340-346) to a user through said user interface, wherein said display is located in said first housing member. The manual input means comprises a first set of keys (120) comprised in said first housing member (100), and a second set of keys (220) comprised in said second housing member (200), wherein a plurality of said services (340-346) are controllable by said user through said first set of keys.
摘要:
A system and method automatically configures the interfaces of an intermediate network device. A discovery process operating at the device detects the identity or type of network entities actually coupled to the device's interfaces. Utilizing the identity or type of detected entities, a look-up is performed to obtain a configuration macro specially defined for each detected network entity. The retrieved configuration macros are executed and applied at the respective interfaces. During operation, the intermediate network device continues to monitor the identity and type of entities actually coupled to its interfaces. If a change is detected, such as an entity moving from a first to a second interface, the specially defined configuration macro for that entity floats from the first to the second interface where it is executed and applied.
摘要:
A system and method automatically configures the interfaces of an intermediate network device. A discovery process operating at the device detects the identity or type of network entities actually coupled to the device's interfaces. Utilizing the identity or type of detected entities, a look-up is performed to obtain a configuration macro specially defined for each detected network entity. The retrieved configuration macros are executed and applied at the respective interfaces. During operation, the intermediate network device continues to monitor the identity and type of entities actually coupled to its interfaces. If a change is detected, such as an entity moving from a first to a second interface, the specially defined configuration macro for that entity floats from the first to the second interface where it is executed and applied.