摘要:
A non-planar transistor including partially melted raised semiconductor source/drains disposed on opposite ends of a semiconductor fin with the gate stack disposed there between. The raised semiconductor source/drains comprise a super-activated dopant region above a melt depth and an activated dopant region below the melt depth. The super-activated dopant region has a higher activated dopant concentration than the activated dopant region and/or has an activated dopant concentration that is constant throughout the melt region. A fin is formed on a substrate and a semiconductor material or a semiconductor material stack is deposited on regions of the fin disposed on opposite sides of a channel region to form raised source/drains. A pulsed laser anneal is performed to melt only a portion of the deposited semiconductor material above a melt depth.
摘要:
Provided are compositions and processes that utilize genomic regions that are differentially methylated between a mother and her fetus to separate, isolate or enrich fetal nucleic acid from a maternal sample. The compositions and processes described herein are particularly useful for non-invasive prenatal diagnostics, including the detection of chromosomal aneuplodies.
摘要:
Laser anneal to melt regions of a microelectronic device buried under overlying materials, such as an interlayer dielectric (ILD). Melting temperature differentiation is employed to selectively melt a buried region. In embodiments a buried region is at least one of a gate electrode and a source/drain region. Laser anneal may be performed after contact formation with contact metal coupling energy into the buried layer for the anneal.
摘要:
A system and method automatically configures the interfaces of an intermediate network device. A discovery process operating at the device detects the identity or type of network entities actually coupled to the device's interfaces. Utilizing the identity or type of detected entities, a look-up is performed to obtain a configuration macro specially defined for each detected network entity. The retrieved configuration macros are executed and applied at the respective interfaces. During operation, the intermediate network device continues to monitor the identity and type of entities actually coupled to its interfaces. If a change is detected, such as an entity moving from a first to a second interface, the specially defined configuration macro for that entity floats from the first to the second interface where it is executed and applied.
摘要:
A system and method automatically configures the interfaces of an intermediate network device. A discovery process operating at the device detects the identity or type of network entities actually coupled to the device's interfaces. Utilizing the identity or type of detected entities, a look-up is performed to obtain a configuration macro specially defined for each detected network entity. The retrieved configuration macros are executed and applied at the respective interfaces. During operation, the intermediate network device continues to monitor the identity and type of entities actually coupled to its interfaces. If a change is detected, such as an entity moving from a first to a second interface, the specially defined configuration macro for that entity floats from the first to the second interface where it is executed and applied.
摘要:
A method of forming a gate electrode is described, comprising forming a dielectric layer on a substrate, forming a first metal layer having a first work function on the dielectric layer, forming a second metal layer having a second work function on the first metal layer, such that a gate electrode is formed on the dielectric layer which has a work function that is determined from the work function of the alloy of the two types of metal. The work function of a microelectronic transistor can be varied or “tuned” depending on the precise definition and control of the metal types, layer sequence, individual layer thickness and total number of layers.