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14 条记录 (耗时 0.037 秒)

    Omega Conotoxins
    1.
    发明申请
    Omega Conotoxins 有权
    欧米茄芋螺毒素

    公开(公告)号：US20100056456A1

    公开(公告)日：2010-03-04

    申请号：US12513182

    申请日：2007-11-02

    申请人： Jae Il Kim ,  Hye Whon Rhim ,  Hyun Jeong Kim ,  Hong Won Suh ,  Soung Hun Roh ,  Jung A. Yun ,  Seung Kyu Lee ,  Young Jae Eu ,  Heung Sik Na

    发明人： Jae Il Kim ,  Hye Whon Rhim ,  Hyun Jeong Kim ,  Hong Won Suh ,  Soung Hun Roh ,  Jung A. Yun ,  Seung Kyu Lee ,  Young Jae Eu ,  Heung Sik Na

    IPC分类号： A61K38/10 ,  C07K7/08 ,  C07H21/00 ,  A61P25/00

    CPC分类号： C07K14/43504 ,  A61K38/00

    摘要： The present invention relates to a method for increasing the binding reversibility of a ω-conotoxin to a N-type calcium channel, which comprises preparing a ω-conotoxin having a Ile and/or Ala residue at a position of amino acid (11 and/or 12), respectively in the second loop between cysteine residues (2 and 3) of the ω-conotoxin represented by the formula I, such that the prepared ω-conotoxin has the increased binding reversibility to N-type calcium channel. In addition, the present invention relates to a novel ω-conotoxin and a pharmaceutical composition having plausible properties in view of blocking activity to and specificity to N-type calcium channel, and dramatically improved binding reversibility to N-type calcium channel.

    摘要翻译： 本发明涉及一种增加ω-芋螺毒素与N-型钙通道的结合可逆性的方法，其包括在氨基酸（11和/或其氨基酸）的位置制备具有Ile和/或Ala残基的ω-芋螺毒素， 或12）分别在由式I表示的ω-芋螺毒素的半胱氨酸残基（2和3）之间的第二环中，使得制备的ω-芋螺毒素对N-型钙通道具有增加的结合可逆性。 此外，本发明涉及一种新型的ω-芋螺毒素和具有似乎合理的性质的药物组合物，其特征在于阻断N-型钙通道的活性和特异性，并显着提高了与N-型钙通道的结合可逆性。

    Omega conotoxins
    2.
    发明授权
    Omega conotoxins 有权
    欧米茄芋螺毒素

    公开(公告)号：US08673856B2

    公开(公告)日：2014-03-18

    申请号：US12513182

    申请日：2007-11-02

    申请人： Jae II Kim ,  Hye Whon Rhim ,  Hyun Jeong Kim ,  Hong Won Suh ,  Soung Hun Roh ,  Jung A Yun ,  Seung Kyu Lee ,  Young Jae Eu ,  Heung Sik Na

    发明人： Jae II Kim ,  Hye Whon Rhim ,  Hyun Jeong Kim ,  Hong Won Suh ,  Soung Hun Roh ,  Jung A Yun ,  Seung Kyu Lee ,  Young Jae Eu ,  Heung Sik Na

    IPC分类号： A61K38/16 ,  A61K38/00 ,  C07K14/00

    CPC分类号： C07K14/43504 ,  A61K38/00

    摘要： The present invention relates to a method for increasing the binding reversibility of a ω-conotoxin to a N-type calcium channel, which comprises preparing a ω-conotoxin having a Ile and/or Ala residue at a position of amino acid (11 and/or 12), respectively in the second loop between cysteine residues (2 and 3) of the ω-conotoxin represented by the formula I, such that the prepared ω-conotoxin has the increased binding reversibility to N-type calcium channel. In addition, the present invention relates to a novel ω-conotoxin and a pharmaceutical composition having plausible properties in view of blocking activity to and specificity to N-type calcium channel, and dramatically improved binding reversibility to N-type calcium channel.

    摘要翻译： 本发明涉及一种增加ω-芋螺毒素与N型钙通道的结合可逆性的方法，其包括在氨基酸（11和/或其氨基酸）的位置制备具有Ile和/或Ala残基的ω-芋螺毒素， 或12）分别在由式I表示的ω-芋螺毒素的半胱氨酸残基（2和3）之间的第二环中，使得所制备的ω-芋螺毒素具有增加的对N-型钙通道的结合可逆性。 此外，本发明涉及一种新型的ω-芋螺毒素和具有似乎合理的性质的药物组合物，其特征在于阻断N-型钙通道的活性和特异性，并显着提高了对N-型钙通道的结合可逆性。

    Magnetic memory device and method for manufacturing the same
    5.
    发明授权
    Magnetic memory device and method for manufacturing the same 有权

    公开(公告)号：US08202737B2

    公开(公告)日：2012-06-19

    申请号：US12494245

    申请日：2009-06-29

    申请人： Hyun Jeong Kim

    发明人： Hyun Jeong Kim

    IPC分类号： H01L29/82

    CPC分类号： H01L27/228 ,  G11C11/1659 ,  G11C11/1675 ,  H01L43/12

    摘要： A magnetic memory device and a method for manufacturing the same are disclosed. The magnetic memory device includes a plurality of gates formed on a semiconductor substrate, a source line connected to a source/drain region shared between the gates neighboring with each other, a plurality of magnetic tunnel junctions connected to non-sharing source/drain regions of the gates on a one-to-one basis, and a bit line connected to the magnetic tunnel junctions. The magnetic memory device applies a magnetic memory cell to a memory so as to manufacture a higher-integration magnetic memory, and uses the magnetic memory cell based on a transistor of a DRAM cell, resulting in an increase in the availability of the magnetic memory.

    Spin Transfer Torque Memory Device Having Common Source Line and Method for Manufacturing the Same
    6.
    发明申请
    Spin Transfer Torque Memory Device Having Common Source Line and Method for Manufacturing the Same 审中-公开
    具有共同源线的自旋转矩转矩存储器件及其制造方法

    公开(公告)号：US20110269251A1

    公开(公告)日：2011-11-03

    申请号：US13178274

    申请日：2011-07-07

    申请人： Hyun Jeong Kim ,  Sung Woong Chung

    发明人： Hyun Jeong Kim ,  Sung Woong Chung

    IPC分类号： H01L21/8246

    CPC分类号： H01L27/228 ,  H01L29/66666 ,  H01L29/7827

    摘要： A spin transfer torque memory device and a method for manufacturing the same. The spin transfer torque memory device comprises a MRAM cell using a MTJ and a vertical transistor. A common source line is formed in the bottom of the vertical transistor, thereby obtaining the high-integrated and simplified memory device.

    摘要翻译： 一种自旋转移力矩存储装置及其制造方法。 自旋转移转矩存储装置包括使用MTJ和垂直晶体管的MRAM单元。 在垂直晶体管的底部形成公共源极线，从而获得高集成度和简化的存储器件。

    OPTICAL SHEETS
    7.
    发明申请
    OPTICAL SHEETS 审中-公开
    光学片

    公开(公告)号：US20090311486A1

    公开(公告)日：2009-12-17

    申请号：US12519699

    申请日：2007-12-18

    申请人： Hyun Jin Kim ,  Hyun Jeong Kim ,  Jong Min Park

    发明人： Hyun Jin Kim ,  Hyun Jeong Kim ,  Jong Min Park

    IPC分类号： B32B3/00

    CPC分类号： G02B5/0278 ,  G02B5/0215 ,  G02B5/0226 ,  G02B5/0231 ,  G02B5/045 ,  G02F2001/133607 ,  Y10T428/24612

    摘要： Disclosed is an optical sheet having an optical structure, such as a prism film or sheet, which is a constituent of a backlight unit. In the optical sheet, protrusions are formed on the optical structure layer, and thus light-collecting efficiency in a front direction is maintained, and a function of diffusing light to the front or the inclined surface is also exhibited, thus eliminating the need to additionally mount a diffusion film or a protection film, thereby obviating the use of a plurality of optical films, consequently making it possible to economically manufacture a backlight unit with improved productivity.

    摘要翻译： 公开了具有作为背光单元的组成部分的光学结构的光学片，例如棱镜膜或片。 在光学片中，在光学结构层上形成突起，从而保持前方的聚光效率，并且还发挥向前面或倾斜面的光的扩散的功能，因此不再需要 安装扩散膜或保护膜，从而避免使用多个光学膜，从而可以经济地制造具有提高的生产率的背光单元。

    THREE-DIMENSIONAL DECORATION
    9.
    发明申请
    THREE-DIMENSIONAL DECORATION 审中-公开
    三维装饰

    公开(公告)号：US20150352893A1

    公开(公告)日：2015-12-10

    申请号：US14654803

    申请日：2013-12-27

    申请人： Hye Jung CHOO ,  Hyun Jeong KIM

    发明人： Hey Jung Choo ,  Hyun Jeong Kim

    IPC分类号： B44F1/06

    CPC分类号： B44F1/066 ,  B44C5/005 ,  B44F7/00 ,  G02B27/2221

    摘要： The present invention discloses a three-dimensional decoration. A three-dimensional decoration in accordance with a first embodiment of the present invention includes: a lenticular lens; a first image layer arranged on a rear side of the lenticular lens; a first cover arranged on a front side of the lenticular lens; and a first spacer configured for separating the first cover from the lenticular lens in such a way that a first spatial layer is formed in between the first cover and the lenticular lens. An image of the first image layer is three-dimensionally formed in the first spatial layer by binocular parallax through the lenticular lens.

    摘要翻译： 本发明公开了一种三维装饰。 根据本发明的第一实施例的三维装饰包括：双凸透镜; 布置在双凸透镜后侧的第一图像层; 布置在双凸透镜的前侧上的第一盖; 以及第一间隔件，其构造成用于将第一盖与双凸透镜分离，使得第一空间层形成在第一盖和双凸透镜之间。 第一图像层的图像通过双凸透镜通过双目视差在第一空间层中三维地形成。

    Magnetic memory device and method for manufacturing the same
    10.
    发明授权
    Magnetic memory device and method for manufacturing the same 有权
    磁记忆装置及其制造方法

    公开(公告)号：US08283186B2

    公开(公告)日：2012-10-09

    申请号：US13476963

    申请日：2012-05-21

    申请人： Hyun Jeong Kim

    发明人： Hyun Jeong Kim

    IPC分类号： H01L29/82

    CPC分类号： H01L27/228 ,  G11C11/1659 ,  G11C11/1675 ,  H01L43/12

    摘要： A magnetic memory device and a method for manufacturing the same are disclosed. The magnetic memory device includes a plurality of gates formed on a semiconductor substrate, a source line connected to a source/drain region shared between the gates neighboring with each other, a plurality of magnetic tunnel junctions connected to non-sharing source/drain regions of the gates on a one-to-one basis, and a bit line connected to the magnetic tunnel junctions. The magnetic memory device applies a magnetic memory cell to a memory so as to manufacture a higher-integration magnetic memory, and uses the magnetic memory cell based on a transistor of a DRAM cell, resulting in an increase in the availability of the magnetic memory.

    摘要翻译： 公开了一种磁存储器件及其制造方法。 磁存储器件包括形成在半导体衬底上的多个栅极，连接到彼此相邻的栅极之间共享的源极/漏极区域的源极线，连接到非共享源极/漏极区域的多个磁性隧道结 一对一的栅极和连接到磁隧道结的位线。 磁存储装置将磁存储单元施加到存储器，以便制造更高集成度的磁存储器，并且使用基于DRAM单元的晶体管的磁存储单元，导致磁存储器的可用性的增加。