DEVICE AND METHOD FOR DETECTING COMPLEX FORMATION
    3.
    发明申请
    DEVICE AND METHOD FOR DETECTING COMPLEX FORMATION 审中-公开
    用于检测复杂形成的装置和方法

    公开(公告)号:US20090111117A1

    公开(公告)日:2009-04-30

    申请号:US12259154

    申请日:2008-10-27

    CPC分类号: G01N33/5438 G01N27/06

    摘要: The present invention provides devices and methods for measuring electrically detectable bulk properties of liquid samples. Representative electrically detectable bulk properties measurable by the devices and methods of the invention include resistivity (conductivity) and dielectric constant (permittivity). The electrically detectable bulk properties are determined by comparing the experimental electrical output of the devices with mathematically simulated models of the experimental devices.

    摘要翻译: 本发明提供用于测量液体样品的电可检测体积特性的装置和方法。 通过本发明的装置和方法可测量的代表性电可检测体积特性包括电阻率(电导率)和介电常数(介电常数)。 通过将装置的实验电输出与实验装置的数学模拟模型进行比较来确定电可检测体积特性。

    SHADOW EDGE LITHOGRAPHY FOR NANOSCALE PATTERNING AND MANUFACTURING
    4.
    发明申请
    SHADOW EDGE LITHOGRAPHY FOR NANOSCALE PATTERNING AND MANUFACTURING 审中-公开
    用于纳米图案和制造的阴影边缘图

    公开(公告)号:US20110151190A1

    公开(公告)日:2011-06-23

    申请号:US12599286

    申请日:2008-05-08

    IPC分类号: B32B5/16 G03F7/20 B82Y30/00

    摘要: An advanced high-resolution and high-throughput shadow edge (116) lithography (SEL) method is disclosed for forming uniform zero- one- and two-dimensional nanostructures on a substrate. The method entails high-vacuum oblique vapor deposition and a compensated shadow effect of a pre-patterned layer (100). A method of compensating for cross-substrate variation is also disclosed. The compensation approach enables routine, low-cost fabrication of uniform nanoscale features, or nanogaps (110) on the order of 10 nm±1 nm, that can be used to etch nanowells (196) or to form nanostructures such as nanowires (169), using a selective metal lift-off process. A wafer-scale analytical model is proposed for predicting the width of nanogaps (110) fabricated by the shadow effect on pre-patterned edges. By combining compensation and pattern reversal techniques with multiple shadow patterning, two-dimensional structures such as crossing nanowires may be generated. A technique is disclosed for smoothing edge roughness of the nanostructures.

    摘要翻译: 公开了先进的高分辨率和高通量阴影边缘(116)光刻(SEL)方法,用于在衬底上形成均匀的零一维和二维纳米结构。 该方法需要高真空倾斜气相沉积和预图案化层(100)的补偿阴影效应。 还公开了补偿交叉衬底变化的方法。 补偿方法可以实现均匀纳米尺度特征或10nm±1nm量级的纳米角(110)的常规,低成本制造,其可用于蚀刻纳米孔(196)或形成纳米结构,例如纳米线(169) ,使用选择性金属剥离过程。 提出了一种晶片级分析模型,用于预测通过阴影效应制作的预先图案化边缘的纳米光栅(110)的宽度。 通过将补偿和图案反转技术与多个阴影图案组合,可以产生诸如交叉纳米线的二维结构。 公开了一种用于平滑纳米结构的边缘粗糙度的技术。