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    GAS DISTRIBUTION PLATE AND SUBSTRATE TREATING APPARATUS INCLUDING THE SAME
    1.
    发明申请
    GAS DISTRIBUTION PLATE AND SUBSTRATE TREATING APPARATUS INCLUDING THE SAME 有权
    气体分布板和底板处理装置，包括其中

    公开(公告)号：US20100006031A1

    公开(公告)日：2010-01-14

    申请号：US12497697

    申请日：2009-07-05

    申请人： Jae-Wook CHOI ,  Chan-Ho Park

    发明人： Jae-Wook CHOI ,  Chan-Ho Park

    IPC分类号： C23C16/54

    CPC分类号： C23C16/45565

    摘要： A gas distribution plate that is installed in a chamber providing a reaction space and supplies a reaction gas onto a substrate placed on a substrate placing plate, wherein the gas distribution plate includes: first and second surfaces opposing to each other, wherein the second surface faces the substrate placing plate and has a recess shape; and a plurality of injection holes each including: an inflow portion that extends from the first surface toward the second surface; a diffusing portion that extends from the second surface toward the first surface; and an orifice portion between the inflow portion and the diffusing portion, wherein the plurality of inflow portions of the plurality of injection holes decrease in gas path from edge to middle of the gas distribution plate, and wherein the plurality of diffusing portions of the plurality of injection holes have substantially the same gas path.

    摘要翻译： 一种气体分配板，其安装在提供反应空间的室中，并将反应气体供应到放置在基板载置板上的基板上，其中所述气体分配板包括：彼此相对的第一和第二表面，其中所述第二表面面 基板放置板，并具有凹部形状; 以及多个喷射孔，每个喷射孔包括：从所述第一表面朝向所述第二表面延伸的流入部分; 扩散部，其从所述第二面向所述第一面延伸; 以及在所述流入部与所述扩散部之间的节流部，所述多个喷射孔的所述多个流入部从所述气体分配板的边缘向中央部的气体路径减少，所述多个喷射孔的所述多个扩散部 注入孔具有基本相同的气体路径。

    Gas distribution plate and substrate treating apparatus including the same
    2.
    发明授权
    Gas distribution plate and substrate treating apparatus including the same 有权
    气体分配板和包括其的基板处理装置

    公开(公告)号：US08702867B2

    公开(公告)日：2014-04-22

    申请号：US12497697

    申请日：2009-07-05

    申请人： Jae-Wook Choi ,  Chan-Ho Park

    发明人： Jae-Wook Choi ,  Chan-Ho Park

    IPC分类号： C23C16/455 ,  H01L21/306 ,  C23F1/00 ,  C23C16/06 ,  C23C16/22

    CPC分类号： C23C16/45565

    摘要： A gas distribution plate that is installed in a chamber providing a reaction space and supplies a reaction gas onto a substrate placed on a substrate placing plate, wherein the gas distribution plate includes: first and second surfaces opposing to each other, wherein the second surface faces the substrate placing plate and has a recess shape; and a plurality of injection holes each including: an inflow portion that extends from the first surface toward the second surface; a diffusing portion that extends from the second surface toward the first surface; and an orifice portion between the inflow portion and the diffusing portion, wherein the plurality of inflow portions of the plurality of injection holes decrease in gas path from edge to middle of the gas distribution plate, and wherein the plurality of diffusing portions of the plurality of injection holes have substantially the same gas path.

    摘要翻译： 一种气体分配板，其安装在提供反应空间的室中，并将反应气体供应到放置在基板载置板上的基板上，其中所述气体分配板包括：彼此相对的第一和第二表面，其中所述第二表面面 基板放置板，并具有凹部形状; 以及多个喷射孔，每个喷射孔包括：从所述第一表面朝向所述第二表面延伸的流入部分; 扩散部，其从所述第二面向所述第一面延伸; 以及在所述流入部与所述扩散部之间的节流部，所述多个喷射孔的所述多个流入部从所述气体分配板的边缘向中央部的气体路径减少，所述多个喷射孔的所述多个扩散部 注入孔具有基本相同的气体路径。

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    3.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20100163981A1

    公开(公告)日：2010-07-01

    申请号：US12648230

    申请日：2009-12-28

    申请人： Jong-Min Kim ,  Jae-Hyun Yoo ,  Chan-Ho Park

    发明人： Jong-Min Kim ,  Jae-Hyun Yoo ,  Chan-Ho Park

    IPC分类号： H01L29/78 ,  H01L21/336

    CPC分类号： H01L29/7835 ,  H01L29/6659 ,  H01L29/66659

    摘要： A semiconductor device includes: an active region defined by a device isolation layer on and/or over a substrate; a second conductive well on and/or over the active region; an extended drain formed at one side of the second conductive well; a gate electrode on and/or over the second conductive well and the extended drain; and a source and a drain formed at both sides of the gate electrode, in which extended regions are formed at the corners of the second conductive well under the gate electrode.

    摘要翻译： 半导体器件包括：由衬底上和/或上面的器件隔离层限定的有源区; 在有源区上和/或上方的第二导电阱; 在所述第二导电孔的一侧形成延伸的漏斗; 在第二导电孔和延伸的漏极上和/或上方的栅电极; 以及形成在栅电极的两侧的源极和漏极，其中延伸区域形成在栅电极下的第二导电阱的角部处。

    Apparatus for searching TCP and UDP sockets
    5.
    发明申请
    Apparatus for searching TCP and UDP sockets 失效
    用于搜索TCP和UDP套接字的设备

    公开(公告)号：US20070088854A1

    公开(公告)日：2007-04-19

    申请号：US11605801

    申请日：2006-11-29

    申请人： Chan-Ho Park ,  Seong-Woon Kim ,  Myung-Joon Kim

    发明人： Chan-Ho Park ,  Seong-Woon Kim ,  Myung-Joon Kim

    IPC分类号： G06F15/16

    CPC分类号： H04L69/16 ,  H04L69/12 ,  H04L69/161 ,  H04L69/162

    摘要： An apparatus for searching a socket ID of a received packet in a transmission control protocol (TCP) and a user datagram protocol (UDP) is provided. The apparatus includes: a master managing unit for analyzing command information from a processor, transferring a command to a branch table managing unit and a tree table managing unit, receiving results from the branch table managing unit and the tree table managing unit, and reporting the received results to the processor; a branch table managing unit for receiving a command from the mater managing unit and managing a branch table; and a tree table managing unit for managing a binary tree.

    摘要翻译： 提供了一种用于在传输控制协议（TCP）和用户数据报协议（UDP）中搜索接收到的分组的套接字ID的装置。 该装置包括：主管理单元，用于从处理器分析命令信息，将命令传送到分支表管理单元和树表管理单元，从分支表管理单元和树表管理单元接收结果，并报告 收到处理器的结果; 分支表管理单元，用于从所述管理单元接收命令并管理分支表; 以及用于管理二叉树的树表管理单元。

    Metal-to-metal capacitor
    6.
    发明申请
    Metal-to-metal capacitor 审中-公开
    金属对金属电容器

    公开(公告)号：US20060157770A1

    公开(公告)日：2006-07-20

    申请号：US11315501

    申请日：2005-12-23

    申请人： Chan-Ho Park

    发明人： Chan-Ho Park

    IPC分类号： H01L27/108

    CPC分类号： H01G4/38 ,  H01G4/228 ,  H01G4/30 ,  H01L23/5223 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A metal-to-metal capacitor including a plurality of first metal blocks formed apart from each other in a vertical direction and arranged in an array format, and a plurality of second metal blocks formed apart from each other in a vertical direction and alternately arranged with the array of the first metal blocks. A first plurality of via contacts interconnect the first metal blocks in a vertical direction and are arranged in parallel, and a second plurality of via contacts interconnect the second metal blocks in a vertical direction and are arranged in parallel.

    摘要翻译： 一种金属 - 金属电容器，包括在垂直方向上彼此分隔并且以阵列形式布置的多个第一金属块，以及沿垂直方向彼此分开形成并交替布置的多个第二金属块 第一块金属块的阵列。 第一多个通孔触点在垂直方向上互连第一金属块并且平行布置，并且第二多个通孔触点在垂直方向上互连第二金属块并且平行布置。

    METHOD FOR GUIDING LOCATION, MACHINE-READABLE SAVING MEDIUM, AND MOBILE COMMUNICATION TERMINAL
    8.
    发明申请
    METHOD FOR GUIDING LOCATION, MACHINE-READABLE SAVING MEDIUM, AND MOBILE COMMUNICATION TERMINAL 有权
    引导位置，机器可读节省媒体和移动通信终端的方法

    公开(公告)号：US20130273940A1

    公开(公告)日：2013-10-17

    申请号：US13995057

    申请日：2011-12-15

    申请人： Chan-Ho Park

    发明人： Chan-Ho Park

    IPC分类号： H04W4/02

    CPC分类号： H04W4/02 ,  G01C21/20 ,  G01C21/3438 ,  G01C21/362 ,  H04L67/18 ,  H04W4/026 ,  H04W4/027 ,  H04W4/043 ,  H04W4/16 ,  H04W4/20

    摘要： A method for guiding location includes commencing a call between a first terminal and a second terminal, the first terminal requesting the collection of location information from the second terminal, receiving the location information of the second terminal and displaying on the first terminal a geographic information map displaying the location information, and the user of the first terminal transmitting to the second terminal direction information that is displayed on the geographic information map. As a result, more intuitive and convenient location guidance is provided.

    摘要翻译： 一种用于引导位置的方法包括开始第一终端和第二终端之间的呼叫，第一终端请求从第二终端收集位置信息，接收第二终端的位置信息，并在第一终端上显示地理信息图 显示位置信息，以及第一终端的用户发送到在地理信息图上显示的第二终端方向信息。 因此，提供了更直观和方便的位置指导。

    APPARATUS AND METHOD FOR MEASURING CHARACTERISTICS OF SEMICONDUCTOR DEVICE
    10.
    发明申请
    APPARATUS AND METHOD FOR MEASURING CHARACTERISTICS OF SEMICONDUCTOR DEVICE 有权
    测量半导体器件特性的装置和方法

    公开(公告)号：US20100164532A1

    公开(公告)日：2010-07-01

    申请号：US12647499

    申请日：2009-12-27

    申请人： Chan-Ho Park ,  Won-Young Jung

    发明人： Chan-Ho Park ,  Won-Young Jung

    IPC分类号： G01R31/26

    CPC分类号： G01R31/31725

    摘要： An apparatus and method for measuring the characteristics of a semiconductor device is disclosed. The measuring apparatus may include first to M-th (wherein M is a positive integer not less than 1) starved devices each being biased in response to a bias voltage varying in accordance with a variable first supply voltage, thereby varying an amount of current flowing through a semiconductor device included in the starved device. Interconnect lines may interconnect the first to M-th starved devices. A measuring unit measures at least one of a delay time caused by the semiconductor devices of the starved devices themselves, and a compound delay time caused by the semiconductor devices of the starved devices themselves plus a delay time caused by the interconnect lines. The measured results can be analyzed under conditions more approximate to diverse situations exhibited in practical chips in accordance with development of manufacturing processes and techniques. It is also possible to provide the basis of a model which more effectively represents coupling geometry of more complex semiconductor devices and interconnect lines. The basis of the model may be applied to development of various tools, etc.

    摘要翻译： 公开了一种用于测量半导体器件的特性的装置和方法。 测量装置可以包括第一至第M（其中M是不小于1的正整数），每个被调节的器件响应于根据可变的第一电源电压而变化的偏置电压被偏置，从而改变流动的电流量 通过包括在饥饿设备中的半导体器件。 互连线路可以将第一个到第五个饥饿设备互连。 测量单元测量由受饥饿器件本身的半导体器件引起的延迟时间和由缺陷器件本身的半导体器件引起的复合延迟时间中的至少一个加上由互连线引起的延迟时间。 根据制造工艺和技术的发展，可以在更接近于实际芯片中显示的多种情况的条件下分析测量结果。 还可以提供更有效地代表更复杂的半导体器件和互连线的耦合几何的模型的基础。 该模型的基础可以应用于各种工具的开发等。