公开(公告)号：US20120280291A1

公开(公告)日：2012-11-08

申请号：US13463197

申请日：2012-05-03

Applicant: Jae-kyu Lee ,  Sang-hyun Hong

Inventor： Jae-kyu Lee ,  Sang-hyun Hong

IPC: H01L29/78

CPC classification number: H01L29/4238 ,  H01L21/26586 ,  H01L21/28123 ,  H01L21/76224 ,  H01L29/1041 ,  H01L29/66575 ,  H01L29/78

Abstract: According to example embodiments, a semiconductor device includes a substrate, a device isolation layer over the substrate that defines an active region of the substrate, a gate electrode crossing over the active region in between a source region and a drain region of the active region. The gate electrode defines at least one gate opening. The at least one gate opening may expose a portion of a boundary between the active region and the device isolation layer.

Abstract translation: 根据示例性实施例，半导体器件包括衬底，衬底上的器件隔离层，其限定衬底的有源区;栅电极，跨过有源区的源区和漏区之间的有源区。 栅电极限定至少一个栅极开口。 至少一个门开口可以暴露活性区域和器件隔离层之间的边界的一部分。

公开(公告)号：US20110134446A1

公开(公告)日：2011-06-09

申请号：US12926777

申请日：2010-12-08

Applicant: Jae-kyu Lee ,  Kyung-rok Kim

Inventor： Jae-kyu Lee ,  Kyung-rok Kim

IPC: H04N1/032 ,  H04N1/04

CPC classification number: H04N1/024 ,  H04N1/40056 ,  H04N1/401

Abstract: The image scanning apparatus includes a light source including at least one light emitting diode (LED) to irradiate light to a document which is a scan target, a light source control unit to control a lighting-up point of time of the light source, an image sensor to transform an image formed by light reflected from the document into an electric signal according to a result of controlling the lighting-up point of time, and an output unit to output image data corresponding to the transformed electric signal.

Abstract translation: 图像扫描装置包括：光源，其包括至少一个用于将光照射到作为扫描对象的原稿的发光二极管（LED）;光源控制单元，用于控制光源的点亮时间点; 图像传感器，用于根据控制点亮时间点的结果将由文档反射的光形成的图像变换为电信号;以及输出单元，输出与变换后的电信号对应的图像数据。

公开(公告)号：US08582172B2

公开(公告)日：2013-11-12

申请号：US12926777

申请日：2010-12-08

Applicant: Jae-kyu Lee ,  Kyung-rok Kim

Inventor： Jae-kyu Lee ,  Kyung-rok Kim

IPC: H04N1/032 ,  H04N1/04

CPC classification number: H04N1/024 ,  H04N1/40056 ,  H04N1/401

Abstract: The image scanning apparatus includes a light source including at least one light emitting diode (LED) to irradiate light to a document which is a scan target, a light source control unit to control a lighting-up point of time of the light source, an image sensor to transform an image formed by light reflected from the document into an electric signal according to a result of controlling the lighting-up point of time, and an output unit to output image data corresponding to the transformed electric signal.

Abstract translation: 图像扫描装置包括：光源，其包括至少一个用于将光照射到作为扫描对象的原稿的发光二极管（LED）;光源控制单元，用于控制光源的点亮时间点; 图像传感器，用于根据控制点亮时间点的结果将由文档反射的光形成的图像变换为电信号;以及输出单元，输出与变换后的电信号对应的图像数据。

公开(公告)号：US20130016408A1

公开(公告)日：2013-01-17

申请号：US13547678

申请日：2012-07-12

Applicant: Jae-kyu Lee

Inventor： Jae-kyu Lee

IPC: H04N1/46 ,  H04N1/04

CPC classification number: H04N1/40075

Abstract: A host apparatus includes a display unit configured to display a user interface (UI) window for an image scanning apparatus, a control unit configured to elevate and determine an optical scanning resolution of the image scanning apparatus according to Moire-related information when a scanning resolution is input and a Moire removing function is selected, in the UI window, and control the image scanning apparatus to perform a scanning operation according to the determined optical scanning resolution, a communication interface unit configured to receive a scanned image scanned with the optical scanning resolution in the image scanning apparatus, a filtering unit configured to remove a halftoning screen pattern from the received scanned image, and a sampling unit configured to down-sample the filtered scanned image with the input scanning resolution.

Abstract translation: 主机装置包括：显示单元，被配置为显示用于图像扫描装置的用户界面（UI）窗口;控制单元，被配置为当扫描分辨率时根据莫尔相关信息提升和确定图像扫描设备的光学扫描分辨率 在UI窗口中选择莫尔去除功能，并且根据所确定的光学扫描分辨率控制图像扫描装置执行扫描操作;通信接口单元，被配置为接收以光学扫描分辨率扫描的扫描图像 在图像扫描装置中，滤波单元被配置为从接收到的扫描图像中去除半色调屏幕图案，以及采样单元，被配置为以输入的扫描分辨率对经滤波的扫描图像进行下采样。

公开(公告)号：US06740954B2

公开(公告)日：2004-05-25

申请号：US10357017

申请日：2003-02-03

Applicant: Jae-kyu Lee

Inventor： Jae-kyu Lee

IPC: H01L2900

CPC classification number: H01L29/1033 ,  H01L21/76235 ,  H01L21/76237

Abstract: A semiconductor device for reducing junction leakage current and mitigating the narrow width effect, and a fabrication method thereof, are provided. The semiconductor device includes a semiconductor substrate in which an active region and an isolation region including a trench are formed, a spacer which is formed on both sidewalls of the trench, a channel stop impurity region which is self-aligned by the spacer and locally formed only at the lower portion of the isolation region, an isolation insulating layer in which the trench is buried, and a gate pattern which is formed on the isolation insulating layer and the active region. When the channel stop impurity region is formed only at the lower portion of the isolation region, isolation characteristics between unit cells can be improved, and also, a junction leakage current can be reduced. Further, the present invention can reduce a narrow width effect, in which a threshold voltage rapidly decreases as a channel width becomes narrower, owing to the formation of the channel stop impurity region on the edges of the active region.

Abstract translation: 提供了用于减少结漏电流并减轻窄宽度效应的半导体器件及其制造方法。 半导体器件包括其中形成有源区和包括沟槽的隔离区的半导体衬底，形成在沟槽的两个侧壁上的间隔物，通过间隔物自对准并且局部形成的沟道阻挡杂质区 仅在隔离区域的下部，隔离绝缘层，沟槽被埋入其中，以及形成在隔离绝缘层和有源区上的栅极图案。 当通道阻挡杂质区只形成在隔离区的下部时，能够提高单位电池之间的隔离特性，并且还可以降低结漏电流。 此外，由于在有源区域的边缘上形成沟道截止杂质区域，本发明可以减小阈值电压随着沟道宽度变窄而急剧减小的窄宽度效应。

公开(公告)号：US10468103B2

公开(公告)日：2019-11-05

申请号：US15826031

申请日：2017-11-29

Applicant: Sung-woo Kim ,  Jae-kyu Lee ,  Ki-seok Suh ,  Hyeong-sun Hong ,  Yoo-sang Hwang ,  Gwan-hyeob Koh

Inventor： Sung-woo Kim ,  Jae-kyu Lee ,  Ki-seok Suh ,  Hyeong-sun Hong ,  Yoo-sang Hwang ,  Gwan-hyeob Koh

IPC: G11C14/00 ,  H01L45/00 ,  H01L29/08 ,  H01L27/108 ,  H01L23/528 ,  H01L29/423 ,  H01L43/08 ,  H01L43/02 ,  H01L43/12 ,  H01L27/24 ,  H01L27/22 ,  H01L27/105 ,  H01L27/02 ,  G11C7/10 ,  G11C11/00

Abstract: An integrated circuit (IC) device may include a single substrate that includes a single chip, and a plurality of memory cells spaced apart from one another on the substrate and having different structures. Manufacturing the IC device may include forming a plurality of first word lines in a first region of the substrate, and forming a plurality of second word lines in or on a second region of the substrate. Capacitors may be formed on the first word lines. Source lines may be formed on the second word lines. An insulation layer that covers the plurality of capacitors and the plurality of source lines may be formed in the first region and the second region. A variable resistance structure may be formed at a location spaced apart from an upper surface of the substrate by a first vertical distance, in the second region.

公开(公告)号：US06537888B2

公开(公告)日：2003-03-25

申请号：US09870298

申请日：2001-05-30

Applicant: Jae-kyu Lee

Inventor： Jae-kyu Lee

IPC: H01L2176

CPC classification number: H01L29/1033 ,  H01L21/76235 ,  H01L21/76237

Abstract: A semiconductor device for reducing junction leakage current and mitigating the narrow width effect, and a fabrication method thereof, are provided. The semiconductor device includes a semiconductor substrate in which an active region and an isolation region including a trench are formed, a spacer which is formed on both sidewalls of the trench, a channel stop impurity region which is self-aligned by the spacer and locally formed only at the lower portion of the isolation region, an isolation insulating layer in which the trench is buried, and a gate pattern which is formed on the isolation insulating layer and the active region. When the channel stop impurity region is formed only at the lower portion of the isolation region, isolation characteristics between unit cells can be improved, and also, a junction leakage current can be reduced. Further, the present invention can reduce a narrow width effect, in which a threshold voltage rapidly decreases as a channel width becomes narrower, owing to the formation of the channel stop impurity region on the edges of the active region.

Abstract translation: 提供了用于减少结漏电流并减轻窄宽度效应的半导体器件及其制造方法。 半导体器件包括其中形成有源区和包括沟槽的隔离区的半导体衬底，形成在沟槽的两个侧壁上的间隔物，通过间隔物自对准并且局部形成的沟道阻挡杂质区 仅在隔离区域的下部，隔离绝缘层，沟槽被埋入其中，以及形成在隔离绝缘层和有源区上的栅极图案。 当通道阻挡杂质区只形成在隔离区的下部时，能够提高单位电池之间的隔离特性，并且还可以降低结漏电流。 此外，由于在有源区域的边缘上形成沟道截止杂质区域，本发明可以减小阈值电压随着沟道宽度变窄而急剧减小的窄宽度效应。