公开(公告)号：US4214920A

公开(公告)日：1980-07-29

申请号：US23300

申请日：1979-03-23

申请人： James A. Amick ,  John V. Milewski ,  Franklin J. Wright

发明人： James A. Amick ,  John V. Milewski ,  Franklin J. Wright

IPC分类号： C01B33/02 ,  C01B33/025 ,  H01L31/04 ,  H01L21/04 ,  C04B31/00

CPC分类号： C01B33/025 ,  Y02E10/546 ,  Y10S148/12 ,  Y10S148/122 ,  Y10S148/13 ,  Y10T428/253

摘要： The present invention relates to the production of high purity solar grade silicon from common rice hulls. A unique process for material purification and reduction includes leaching the rice hulls in acid followed by treatment with high purity water, coking the acid-cleaned hulls in a non-oxidizing ambient, compensating the carbon or silica content of the coked hulls to obtain a desired carbon to silica ratio and reducing the silica to produce high purity silicon.

摘要翻译： 本发明涉及从普通稻壳生产高纯度太阳能级硅。 用于材料净化和还原的独特方法包括将稻壳浸入酸中，然后用高纯度水处理，在非氧化环境中焦化酸洗净的船体，补偿焦化的船体的碳或二氧化硅含量，以获得所需的 碳与二氧化硅的比例，还原二氧化硅以产生高纯度硅。

公开(公告)号：US4513030A

公开(公告)日：1985-04-23

申请号：US389802

申请日：1982-06-18

申请人： John V. Milewski

发明人： John V. Milewski

IPC分类号： C04B41/87 ,  C01B31/36 ,  C04B35/573 ,  C04B35/80 ,  B05D3/10 ,  C04B35/54 ,  C23C11/08

CPC分类号： C04B35/573 ,  C04B35/806

摘要： A method of producing articles comprising reaction-bonded silicon carbide (SiC) and graphite (and/or carbon) is given. The process converts the graphite (and/or carbon) in situ to SiC, thus providing the capability of economically obtaining articles made up wholly or partially of SiC having any size and shape in which graphite (and/or carbon) can be found or made. When the produced articles are made of an inner graphite (and/or carbon) substrate to which SiC is reaction bonded, these articles distinguish SiC-coated graphite articles found in the prior art by the feature of a strong bond having a gradual (as opposed to a sharply defined) interface which extends over a distance of mils. A method for forming SiC whisker-reinforced ceramic matrices is also given. The whisker-reinforced articles comprise SiC whiskers which substantially retain their structural integrity.

摘要翻译： 给出了制备包含反应粘合碳化硅（SiC）和石墨（和/或碳）的制品的方法。 该方法将石墨（和/或碳）原位转化为SiC，从而提供经济地获得全部或部分由具有任何尺寸和形状的SiC制成的制品的能力，其中可以发现或制造石墨（和/或碳） 。 当所生产的制品由SiC反应结合的内部石墨（和/或碳）基材制成时，这些制品区分了现有技术中发现的SiC涂层石墨制品，其特征是具有渐变（相反） 到一个清晰定义的）界面，其延伸超过密耳的距离。 还提供了形成SiC晶须增强陶瓷基体的方法。 晶须增强制品包括基本保持其结构完整性的SiC晶须。

公开(公告)号：US4864186A

公开(公告)日：1989-09-05

申请号：US175052

申请日：1988-03-29

申请人： John V. Milewski ,  Peter D. Milewski

发明人： John V. Milewski ,  Peter D. Milewski

IPC分类号： H01K1/04

CPC分类号： H01K1/04

摘要： An electric light filament comprising a single crystal whisker is disclosed. In the preferred embodiment the whisker consists essentially of silicon carbide (SiC), preferably beta silicon carbide, doped with a sufficient amount of nitrogen to render the whisker sufficiently electrically conductive to be useful as a light bulb filament at household voltages. Filaments made of such materials are characterized by high strength, durability, and resilience, and have higher electrical emissivities than conventioanl tungsten filaments.

摘要翻译： 公开了一种包含单晶须晶的电灯丝。 在优选的实施方案中，晶须基本上由掺杂足够量的氮的碳化硅（SiC），优选β碳化硅组成，以使晶须充分导电，以在家用电压下用作灯泡灯丝。 由这种材料制成的丝的特征在于高强度，耐久性和弹性，并且具有比常规钨丝更高的电气发射率。

公开(公告)号：US4083708A

公开(公告)日：1978-04-11

申请号：US815142

申请日：1977-07-13

申请人： Carl E. Heath ,  Daniel Grafstein ,  John V. Milewski

发明人： Carl E. Heath ,  Daniel Grafstein ,  John V. Milewski

IPC分类号： C03C3/00 ,  C03C3/06 ,  C03C25/10 ,  C23C16/01 ,  C23C16/40 ,  C23C16/448 ,  C03C19/00 ,  C03C17/00 ,  C03C25/02

CPC分类号： C23C16/402 ,  C03C25/10 ,  C03C3/00 ,  C03C3/06 ,  C23C16/01 ,  C23C16/4488 ,  C03C2201/02 ,  C03C2203/40

摘要： Adherent layers of glass are deposited on a preform or substrate via the controlled oxidation of a glass precursor, such as silicon monoxide, in the vapor state, thereby providing unusual shaped composite articles having a glass coating on the substrate. A preform or substrate such as carbon can subsequently be oxidized, thereby providing a glass microcapillary of exceedingly uniform dimensions.

摘要翻译： 玻璃的粘附层通过蒸汽状态下的玻璃前体（例如一氧化硅）的受控氧化而沉积在预制件或基底上，从而提供在基底上具有玻璃涂层的异常成形的复合制品。 预先形成的碳或碳基材料随后可以被氧化，从而提供尺寸非常均匀的玻璃微毛细管。

公开(公告)号：US5404836A

公开(公告)日：1995-04-11

申请号：US434986

申请日：1989-11-09

申请人： John V. Milewski

发明人： John V. Milewski

IPC分类号： C30B25/00 ,  C30B29/36 ,  C30B29/38 ,  C30B29/62 ,  C30B35/00

CPC分类号： C30B25/005 ,  C30B29/36 ,  C30B29/38 ,  C30B29/403 ,  Y10T117/102

摘要： Described herein is a method and apparatus for continuously growing single crystal whiskers of silicon carbide, silicon nitride, boron carbide and boron nitride by the VLS process under controlled reaction conditions. A growth substrate such as a plate of solid graphite is coated with a suitable VLS catalyst and is conveyed through a tubular furnace, into which is separately introduced two feed gases. The first feed gas contains a cationic suboxide precursor such as silicon monoxide or boron monoxide. The second feed gas contains an anionic precursor compound such as methane or ammonia. The precursor compounds react upon exposure to the catalyst by the VLS process to produce crystalline whiskers. The associated apparatus includes a conveyor assembly that continuously circulates multiple substrate growth plates through the furnace and past a harvesting device which brushes the whiskers from the plates and removes them by vacuum collection. Whiskers of uniform size, shape, and purity are produced.

摘要翻译： 本文描述了一种在受控反应条件下通过VLS工艺连续生长碳化硅，氮化硅，碳化硼和氮化硼的单晶晶须的方法和装置。 诸如固体石墨板的生长衬底涂覆有合适的VLS催化剂，并通过管式炉输送，其中单独引入两种进料气体。 第一进料气体含有阳离子低氧化物前体，例如一氧化硅或一氧化硼。 第二进料气体含有阴离子前体化合物如甲烷或氨。 前体化合物通过VLS工艺暴露于催化剂时产生晶体晶须。 相关联的设备包括输送机组件，该输送机组件使多个基板生长板连续循环通过炉并经过从板上刷出晶须并通过真空收集将其去除的收获装置。 产生均匀尺寸，形状和纯度的晶须。