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    A CMOS IMAGER PHOTODIODE WITH ENHANCED CAPACITANCE
    1.
    发明申请
    A CMOS IMAGER PHOTODIODE WITH ENHANCED CAPACITANCE 失效
    具有增强电容的CMOS成像器光电二极管

    公开(公告)号：US20070187734A1

    公开(公告)日：2007-08-16

    申请号：US11276085

    申请日：2006-02-14

    申请人： James Adkisson ,  John Ellis-Monaghan ,  Mark Jaffe ,  Dale Pearson ,  Dennis Rogers

    发明人： James Adkisson ,  John Ellis-Monaghan ,  Mark Jaffe ,  Dale Pearson ,  Dennis Rogers

    IPC分类号： H01L31/062

    CPC分类号： H01L27/14643 ,  H01L27/1463 ,  H01L27/14689 ,  H01L31/035281

    摘要： A pixel sensor cell having a semiconductor substrate having a surface; a photosensitive element formed in a substrate having a non-laterally disposed charge collection region entirely isolated from a physical boundary including the substrate surface. The photosensitive element comprises a trench having sidewalls formed in the substrate of a first conductivity type material; a first doped layer of a second conductivity type material formed adjacent to at least one of the sidewalls; and a second doped layer of the first conductivity type material formed between the first doped layer and the at least one trench sidewall and formed at a surface of the substrate, the second doped layer isolating the first doped layer from the at least one trench sidewall and the substrate surface. In a further embodiment, an additional photosensitive element is provided that includes a laterally disposed charge collection region that contacts the non-laterally disposed charge collection region of the photosensitive element and underlies the doped layer formed at the substrate surface.

    摘要翻译： 一种像素传感器单元，具有具有表面的半导体衬底; 形成在具有与包括基板表面的物理边界完全隔离的非横向布置的电荷收集区域的基板中的感光元件。 感光元件包括具有形成在第一导电类型材料的衬底中的侧壁的沟槽; 与所述侧壁中的至少一个相邻形成的第二导电类型材料的第一掺杂层; 以及形成在所述第一掺杂层和所述至少一个沟槽侧壁之间且形成在所述衬底的表面处的所述第一导电类型材料的第二掺杂层，所述第二掺杂层将所述第一掺杂层与所述至少一个沟槽侧壁隔离， 基材表面。 在另一个实施例中，提供附加的光敏元件，其包括横向设置的电荷收集区域，其接触感光元件的非横向设置的电荷收集区域，并且位于形成在基底表面处的掺杂层的下方。

    A CMOS IMAGER PHOTODIODE WITH ENHANCED CAPACITANCE
    2.
    发明申请
    A CMOS IMAGER PHOTODIODE WITH ENHANCED CAPACITANCE 审中-公开

    公开(公告)号：US20060102939A1

    公开(公告)日：2006-05-18

    申请号：US11276085

    申请日：2006-02-14

    申请人： James Adkisson ,  John Ellis-Monaghan ,  Mark Jaffe ,  Dale Pearson ,  Dennis Rogers

    发明人： James Adkisson ,  John Ellis-Monaghan ,  Mark Jaffe ,  Dale Pearson ,  Dennis Rogers

    IPC分类号： H01L31/062

    摘要： A pixel sensor cell having a semiconductor substrate having a surface; a photosensitive element formed in a substrate having a non-laterally disposed charge collection region entirely isolated from a physical boundary including the substrate surface. The photosensitive element comprises a trench having sidewalls formed in the substrate of a first conductivity type material; a first doped layer of a second conductivity type material formed adjacent to at least one of the sidewalls; and a second doped layer of the first conductivity type material formed between the first doped layer and the at least one trench sidewall and formed at a surface of the substrate, the second doped layer isolating the first doped layer from the at least one trench sidewall and the substrate surface. In a further embodiment, an additional photosensitive element is provided that includes a laterally disposed charge collection region that contacts the non-laterally disposed charge collection region of the photosensitive element and underlies the doped layer formed at the substrate surface.

    STRUCTURE FOR PIXEL SENSOR CELL THAT COLLECTS ELECTRONS AND HOLES
    3.
    发明申请
    STRUCTURE FOR PIXEL SENSOR CELL THAT COLLECTS ELECTRONS AND HOLES 失效
    用于收集电子和孔的像素传感器单元的结构

    公开(公告)号：US20070296006A1

    公开(公告)日：2007-12-27

    申请号：US11850776

    申请日：2007-09-06

    申请人： James Adkisson ,  Andres Bryant ,  John Ellis-Monaghan ,  Mark Jaffe ,  Jeffrey Johnson ,  Alain Loiseau

    发明人： James Adkisson ,  Andres Bryant ,  John Ellis-Monaghan ,  Mark Jaffe ,  Jeffrey Johnson ,  Alain Loiseau

    IPC分类号： H01L31/00

    CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14689 ,  H01L31/035281 ,  H01L31/1037

    摘要： The present invention relates to a design structure for a pixel sensor cell. The pixel sensor cell approximately doubles the available signal for a given quanta of light. A design structure for a pixel sensor cell having reduced complexity includes an n-type collection well region formed beneath a surface of a substrate for collecting electrons generated by electromagnetic radiation impinging on the pixel sensor cell and a p-type collection well region formed beneath the surface of the substrate for collecting holes generated by the impinging photons. A circuit structure having a first input is coupled to the n-type collection well region and a second input is coupled to the p-type collection well region, wherein an output signal of the pixel sensor cell is the magnitude of the difference of a signal of the first input and a signal of the second input.

    摘要翻译： 本发明涉及一种像素传感器单元的设计结构。 像素传感器单元对于给定的光量大约使可用信号加倍。 具有降低的复杂度的像素传感器单元的设计结构包括形成在基板的表面下面的n型收集阱区域，用于收集电子辐射产生的电子撞击在像素传感器单元上​​，以及p型收集阱区域 用于收集由撞击光子产生的孔的基板的表面。 具有第一输入的电路结构耦合到n型收集阱区域，而第二输入端耦合到p型收集阱区域，其中像素传感器单元的输出信号是信号的差值的大小 的第一输入和第二输入的信号。

    IMAGE SENSOR CELLS
    6.
    发明申请
    IMAGE SENSOR CELLS 有权
    图像传感器细胞

    公开(公告)号：US20060186505A1

    公开(公告)日：2006-08-24

    申请号：US10906510

    申请日：2005-02-23

    申请人： James Adkisson ,  John Ellis-Monaghan ,  Jeffrey Gambino ,  Mark Jaffe ,  Richard Rassel

    发明人： James Adkisson ,  John Ellis-Monaghan ,  Jeffrey Gambino ,  Mark Jaffe ,  Richard Rassel

    IPC分类号： H01L31/06

    CPC分类号： H01L27/14609 ,  H01L27/1463 ,  H01L27/14641 ,  H01L27/14643 ,  H01L31/035281

    摘要： A structure (and method for forming the same) for an image sensor cell. The structure includes (a) a semiconductor substrate; (b) a charge collection well on the substrate, the charge collection well comprising a semiconductor material doped with a first doping polarity; (c) a surface pinning layer on and in direct physical contact with the charge collection well, the surface pinning layer comprising a semiconductor material doped with a second doping polarity opposite to the first doping polarity; and (d) an electrically conducting push electrode being in direct physical contact with the surface pinning layer but not being in direct physical contact with the charge collection well.

    摘要翻译： 用于图像传感器单元的结构（及其形成方法）。 该结构包括（a）半导体衬底; （b）在所述衬底上的电荷收集阱，所述电荷收集阱包括掺杂有第一掺杂极性的半导体材料; （c）与电荷收集阱直接物理接触的表面钉扎层，所述表面钉扎层包括掺杂有与第一掺杂极性相反的第二掺杂极性的半导体材料; 和（d）与表面钉扎层直接物理接触但不与电荷收集阱直接物理接触的导电推动电极。

    RECESSED GATE FOR A CMOS IMAGE SENSOR
    8.
    发明申请
    RECESSED GATE FOR A CMOS IMAGE SENSOR 有权
    CMOS图像传感器的接收门

    公开(公告)号：US20070184614A1

    公开(公告)日：2007-08-09

    申请号：US11735223

    申请日：2007-04-13

    申请人： James Adkisson ,  John Ellis-Monaghan ,  Mark Jaffe ,  Jerome Lasky

    发明人： James Adkisson ,  John Ellis-Monaghan ,  Mark Jaffe ,  Jerome Lasky

    IPC分类号： H01L21/336

    CPC分类号： H01L27/14603 ,  H01L27/14601 ,  H01L27/14689 ,  H01L29/66621

    摘要： A novel CMOS image sensor cell structure and method of manufacture. The imaging sensor comprises a substrate having an upper surface, a gate comprising a dielectric layer formed on the substrate and a gate conductor formed on the gate dielectric layer, a collection well layer of a first conductivity type formed below a surface of the substrate adjacent a first side of the gate conductor, a pinning layer of a second conductivity type formed atop the collection well at the substrate surface, and a diffusion region of a first conductivity type formed adjacent a second side of the gate conductor, the gate conductor forming a channel region between the collection well layer and the diffusion region. A portion of the bottom of the gate conductor is recessed below the surface of the substrate. Preferably, a portion of the gate conductor is recessed at or below a bottom surface of the pinning layer to a depth such that the collection well intersects the channel region thereby eliminating any potential barrier interference caused by the pinning layer.

    摘要翻译： 一种新颖的CMOS图像传感器单元结构及其制造方法。 成像传感器包括具有上表面的基板，包括形成在基板上的电介质层的栅极和形成在栅极电介质层上的栅极导体，形成在基板表面附近的第一导电类型的集合阱层 栅极导体的第一侧，形成在基板表面上的集电阱顶部的第二导电类型的钉扎层，以及邻近栅极导体的第二侧形成的第一导电类型的扩散区域，栅极导体形成沟道 收集阱层和扩散区域之间的区域。 栅极导体的底部的一部分在衬底的表面下方凹进。 优选地，栅极导体的一部分在钉扎层的底表面处或下方凹陷到深度，使得收集阱与沟道区相交，从而消除由钉扎层引起的任何潜在的屏障干扰。

    RECESSED GATE FOR AN IMAGE SENSOR
    9.
    发明申请
    RECESSED GATE FOR AN IMAGE SENSOR 有权
    图像传感器的门

    公开(公告)号：US20060124976A1

    公开(公告)日：2006-06-15

    申请号：US10905097

    申请日：2004-12-15

    申请人： James Adkisson ,  John Ellis-Monaghan ,  Mark Jaffe ,  Jerome Lasky

    发明人： James Adkisson ,  John Ellis-Monaghan ,  Mark Jaffe ,  Jerome Lasky

    IPC分类号： H01L31/113 ,  H01L29/76 ,  H01L29/94

    CPC分类号： H01L27/14603 ,  H01L27/14601 ,  H01L27/14689 ,  H01L29/66621

    摘要： A novel image sensor cell structure and method of manufacture. The imaging sensor comprises a substrate, a gate comprising a dielectric layer and gate conductor formed on the dielectric layer, a collection well layer of a first conductivity type formed below a surface of the substrate adjacent a first side of the gate conductor, a pinning layer of a second conductivity type formed atop the collection well at the substrate surface, and a diffusion region of a first conductivity type formed adjacent a second side of the gate conductor, the gate conductor forming a channel region between the collection well layer and the diffusion region. Part of the gate conductor bottom is recessed below the surface of the substrate. Preferably, a portion of the gate conductor is recessed at or below a bottom surface of the pinning layer to a depth such that the collection well intersects the channel region.

    摘要翻译： 一种新颖的图像传感器单元结构及其制造方法。 成像传感器包括基板，包括电介质层和形成在电介质层上的栅极导体的栅极，形成在与栅极导体的第一侧相邻的基板的表面下面的第一导电类型的收集阱层，钉扎层 在基板表面上形成在集合阱顶部的第二导电类型的第一导电类型的扩散区和在栅极导体的第二侧附近形成的第一导电类型的扩散区，栅极导体在集电阱层和扩散区之间形成沟道区 。 栅极导体底部的一部分凹陷在基板的表面下方。 优选地，栅极导体的一部分在钉扎层的底表面处或下方凹陷到使得收集阱与沟道区相交的深度。

    IMAGE SENSOR CELLS
    10.
    发明申请
    IMAGE SENSOR CELLS 失效
    图像传感器细胞

    公开(公告)号：US20070108485A1

    公开(公告)日：2007-05-17

    申请号：US11619024

    申请日：2007-01-02

    申请人： James Adkisson ,  John Ellis-Monaghan ,  Jeffrey Gambino ,  Mark Jaffe ,  Richard Rassel

    发明人： James Adkisson ,  John Ellis-Monaghan ,  Jeffrey Gambino ,  Mark Jaffe ,  Richard Rassel

    IPC分类号： H01L31/113 ,  H01L21/00

    CPC分类号： H01L27/14609 ,  H01L27/1463 ,  H01L27/14641 ,  H01L27/14643 ,  H01L31/035281

    摘要： A structure (and method for forming the same) for an image sensor cell. The method includes providing a semiconductor substrate. Then, a charge collection well is formed in the semiconductor substrate, the charge collection well comprising dopants of a first doping polarity. Next, a surface pinning layer is formed in the charge collection well, the surface pinning layer comprising dopants of a second doping polarity opposite to the first doping polarity. Then, an electrically conductive push electrode is formed in direct physical contact with the surface pinning layer but not in direct physical contact with the charge collection well. Then, a transfer transistor is formed on the semiconductor substrate. The transfer transistor includes first and second source/drain regions and a channel region. The first and second source/drain regions comprise dopants of the first doping polarity. The first source/drain region is in direct physical contact with the charge collection well.

    摘要翻译： 用于图像传感器单元的结构（及其形成方法）。 该方法包括提供半导体衬底。 然后，在半导体衬底中形成电荷收集阱，电荷收集阱包含第一掺杂极性的掺杂剂。 接下来，在电荷收集阱中形成表面钉扎层，表面钉扎层包括与第一掺杂极性相反的第二掺杂极性的掺杂剂。 然后，导电的推动电极形成为与表面钉扎层直接物理接触，但不与电荷收集阱直接物理接触。 然后，在半导体衬底上形成传输晶体管。 传输晶体管包括第一和第二源极/漏极区域和沟道区域。 第一和第二源/漏区包括第一掺杂极性的掺杂剂。 第一源极/漏极区域与电荷收集阱直接物理接触。