利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

50 条记录 (耗时 0.029 秒)

    Magnetic memory layers thermal pulse transitions
    1.
    发明授权
    Magnetic memory layers thermal pulse transitions 有权
    磁存储层热脉冲过渡

    公开(公告)号：US07813165B2

    公开(公告)日：2010-10-12

    申请号：US11881097

    申请日：2007-07-25

    申请人： James M. Daughton ,  Arthur V. Pohm

    发明人： James M. Daughton ,  Arthur V. Pohm

    IPC分类号： G11C5/06 ,  G11C5/08 ,  G11C11/02 ,  G11C11/14 ,  G11C11/15

    CPC分类号： G11C11/16 ,  G11C11/15 ,  G11C11/1675 ,  H01L27/222 ,  H01L27/226 ,  H01L43/08

    摘要： A ferromagnetic thin-film based digital memory having bit structures therein with a magnetic material film in which a magnetic property thereof is maintained below a critical temperature above which such magnetic property is not maintained, and may also have a plurality of word line structures each with heating sections located across from the magnetic material film in a corresponding one of the bit structures. These bit structures are sufficiently thermally isolated to allow selected currents in the adjacent word lines or in the bit structure, or both, to selectively heat the bit structure to approach the critical temperature. Such bit structures may have three magnetic material layers each with its own critical temperature for maintaining versus not maintaining a magnetic property thereof.

    摘要翻译： 一种基于铁磁性薄膜的数字存储器，其具有位结构，具有磁性材料膜，其磁性能保持在低于不能保持这种磁性的临界温度以下，并且还可以具有多个字线结构， 在相应的一个位结构中位于磁性材料膜两侧的加热部分。 这些位结构被充分热隔离，以允许相邻字线或位结构中的选定电流或两者都选择性地加热位结构以接近临界温度。 这种钻头结构可以具有三个磁性材料层，每个磁性材料层具有其自身的临界温度以维持而不保持其磁性。

    Inverted magnetic isolator
    2.
    发明授权
    Inverted magnetic isolator 有权
    倒置磁隔离器

    公开(公告)号：US07557562B2

    公开(公告)日：2009-07-07

    申请号：US11229282

    申请日：2005-09-16

    申请人： John K. Myers ,  James M. Daughton

    发明人： John K. Myers ,  James M. Daughton

    IPC分类号： G01R15/18 ,  G01R19/20 ,  G01R15/20 ,  G11B5/33 ,  G11B5/127

    CPC分类号： G01R15/205 ,  G01R15/202 ,  G01R15/207 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A current determiner comprising a first input conductor and a first current sensor, formed of a plurality of magnetoresistive, anisotropic, ferromagnetic thin-film layers at least two of which are separated from one another by a nonmagnetic layer positioned therebetween, and both supported on a substrate adjacent to and spaced apart from one another so they are electrically isolated with the first current sensor positioned in those magnetic fields arising from any input currents. A first shield/concentrator of a material exhibiting a substantial magnetic permeability is positioned between the substrate and the first input conductor. A similar second current sensor can be individually formed, but can also be in the current determiner structure that is supported on the substrate along with a second input conductor supported on the substrate suited for conducting input currents therethrough.

    摘要翻译： 一种电流确定器，包括由多个磁阻各向异性铁磁薄膜层形成的第一输入导体和第一电流传感器，其中至少两个通过位于它们之间的非磁性层彼此分离，并且两者均支撑在 基板相邻并彼此间隔开，使得它们与位于由任何输入电流产生的那些磁场中的第一电流传感器电隔离。 表现出实质磁导率的材料的第一屏蔽/集中器位于基板和第一输入导体之间。 类似的第二电流传感器可以单独地形成，但是也可以是电流确定器结构，其被支撑在衬底上，以及支撑在衬底上的第二输入导体，其适于传导通过其中的输入电流。

    Magnetoresistive memory including thin film storage cells having tapered ends
    8.
    发明授权
    Magnetoresistive memory including thin film storage cells having tapered ends 失效
    磁阻存储器包括具有锥形末端的薄膜存储单元

    公开(公告)号：US4731757A

    公开(公告)日：1988-03-15

    申请号：US879679

    申请日：1986-06-27

    申请人： James M. Daughton ,  Jack S. T. Huang

    发明人： James M. Daughton ,  Jack S. T. Huang

    IPC分类号： G11C11/15

    CPC分类号： G11C11/15

    摘要： A digital memory based on a memory cell having two magnetoresistive ferromagnetic film portions separated by an intermediate layer all of which are gradually narrowed at the ends thereof.Adjacent memory cells are preferrably arranged in a line with conductive junctions therebetween. The magnetic state of each cell can be sensed or set by providing currents of different magnitudes in conductive word lines which overlie the cells. The narrowed ends of the cells reduce demagnetizing effects which occur if the cell ends are abruptly terminated.

    摘要翻译： 一种基于存储单元的数字存储器，具有由中间层分离的两个磁阻铁磁膜部分，所述中间层全部在其端部逐渐变窄。 相邻存储器单元优选地布置在其间具有导电接头的线中。 可以通过在覆盖在单元上的导电字线中提供不同幅度的电流来感测或设置每个单元的磁状态。 细胞的变窄端减少如果细胞末端突然终止而发生的消磁作用。

    Magnetic memory layers thermal pulse transitions
    10.
    发明授权
    Magnetic memory layers thermal pulse transitions 有权
    磁存储层热脉冲过渡

    公开(公告)号：US07266013B2

    公开(公告)日：2007-09-04

    申请号：US11651729

    申请日：2007-01-10

    申请人： James M. Daughton ,  Arthur V. Pohm

    发明人： James M. Daughton ,  Arthur V. Pohm

    IPC分类号： G11C11/14 ,  G11C11/15

    CPC分类号： G11C11/16 ,  G11C11/15 ,  G11C11/1675 ,  H01L27/222 ,  H01L27/226 ,  H01L43/08

    摘要： A ferromagnetic thin-film based digital memory having a bit structures therein a magnetic material film in which a magnetic property thereof is maintained below a critical temperature above which such magnetic property is not maintained, and may also have a plurality of word line structures each with heating sections located across from the magnetic material film in a corresponding one of the bit structures. These bit structures are sufficiently thermally isolated to allow selected currents in the adjacent word lines or in the bit structure, or both, to selectively heat the bit structure to approach the critical temperature. Such bit structures may have three magnetic material layers each with its own critical temperature for maintaining versus not maintaining a magnetic property thereof.

    摘要翻译： 一种基于铁磁性薄膜的数字存储器，其中具有磁性材料膜的位结构，其中磁性材料膜的磁性能保持在低于不能保持这种磁性的临界温度以下，并且还可以具有多个字线结构，每个具有 在相应的一个位结构中位于磁性材料膜两侧的加热部分。 这些位结构被充分热隔离，以允许相邻字线或位结构中的选定电流或两者都选择性地加热位结构以接近临界温度。 这种钻头结构可以具有三个磁性材料层，每个磁性材料层具有其自身的临界温度以维持而不保持其磁性。