Integrated Circuits with Components on Both Sides of a Selected Substrate and Methods of Fabrication
    2.
    发明申请
    Integrated Circuits with Components on Both Sides of a Selected Substrate and Methods of Fabrication 有权
    集成电路与选定基板的两面上的组件和制造方法

    公开(公告)号:US20130154088A1

    公开(公告)日:2013-06-20

    申请号:US13528832

    申请日:2012-06-20

    IPC分类号: H01L27/12 H01L21/78

    摘要: Novel integrated circuits (SOI ICs), and methods for making and mounting the ICs are disclosed. In one embodiment, an IC comprises a first circuit layer of the IC formed from an active layer of an SOI wafer. The first circuit layer is coupled to a first surface of buffer layer, and a second surface of the buffer layer is coupled to a selected substrate comprising an insulating material. The selected substrate may be selected, without limitation, from the following types: sapphire, quartz, silicon dioxide glass, piezoelectric materials, and ceramics. A second circuit layer of the IC are formed, coupled to a second surface of the selected substrate. In one embodiment of a mounted IC, the first circuit layer is coupled to contact pads on a package substrate via solder bumps or copper pillars. The second circuit layer is coupled to contact pads on the package substrate via wire bonds.

    摘要翻译: 公开了新型集成电路(SOI IC)以及制造和安装IC的方法。 在一个实施例中,IC包括由SOI晶片的有源层形成的IC的第一电路层。 第一电路层耦合到缓冲层的第一表面,并且缓冲层的第二表面耦合到包括绝缘材料的选定衬底。 所选择的基板可以选自但不限于以下类型:蓝宝石,石英,二氧化硅玻璃,压电材料和陶瓷。 形成IC的第二电路层,耦合到所选择的衬底的第二表面。 在安装的IC的一个实施例中,第一电路层通过焊料凸块或铜柱与封装衬底上的接触焊盘耦合。 第二电路层通过引线接合耦合到封装衬底上的接触焊盘。