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公开(公告)号：US07000473B2
公开(公告)日：2006-02-21
申请号：US10828042
申请日：2004-04-20
IPC分类号： G01P15/125
CPC分类号： B81B3/001 , B81B2201/0235 , G01P15/08 , G01P15/125
摘要： A micro-electromechanical (MEM) device has a folded tether spring in which each fold of the spring is surrounded by a rigidly fixed inner structure and outer structure. The fixed inner structure increases restoring force of the spring. The rigidly fixed inner and outer structures each have a major surface that include a plurality of notches of fixed width relative to a distance between the major surface and the spring. Additionally in one form extensions from the major surface of the rigidly fixed inner and outer structures are provided at distal ends thereof to make initial contact with the spring. The notches of the MEM device both reduce surface area contact with the spring and wick moisture away from the spring to minimize stiction.
摘要翻译： 微机电（MEM）装置具有折叠的系绳弹簧，弹簧的每个折叠由刚性固定的内部结构和外部结构包围。 固定的内部结构增加了弹簧的恢复力。 刚性固定的内外结构各自具有主表面，该主表面包括相对于主表面和弹簧之间的距离具有固定宽度的多个凹口。 此外，在一个形式中，刚性固定的内外结构的主表面的延伸部设置在其远端处以与弹簧初始接触。 MEM器件的凹口都减少了与弹簧的表面积接触，并使芯吸湿度远离弹簧以最小化粘性。
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公开(公告)号：US06228275B1
公开(公告)日：2001-05-08
申请号：US09208924
申请日：1998-12-10
IPC分类号： H01L21302
CPC分类号： G01P15/0802 , G01P15/125 , G01P2015/0814
摘要： A sensor has a support substrate (200), an electrode (110, 510, 710) movable relative to a surface (201) of the support substrate (200) and comprised of a first material, a structure (160, 460, 560, 760) over a portion of the electrode (110, 510, 710) to limit mobility of the electrode (110, 510, 710) and comprised of a second material different from the first material, and bonding pads (170, 470) outside a perimeter of the electrode (110, 510, 710) and comprised of the second material.
摘要翻译： 传感器具有支撑衬底（200），可相对于支撑衬底（200）的表面（201）移动并且由第一材料，结构（160,460,560， 760）覆盖所述电极（110,510,710）的一部分以限制所述电极（110,510,710）的移动性，并且包括不同于所述第一材料的第二材料，以及在所述电极 电极（110,510,710）的周边并且由第二材料构成。
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公开(公告)号：US6122963A
公开(公告)日：2000-09-26
申请号：US235731
申请日：1999-01-22
IPC分类号： G01P15/125
CPC分类号： G01P15/125
摘要： An electronic component includes a support substrate (101), a fixed electrode (113) overlying the support substrate (101), a movable electrode (123, 423) overlying the support substrate and the first electrode (113) wherein the first and second electrodes (113, 123, and 423) form a capacitor with a sensing area, an anchor (122, 422) coupled to the support substrate (101), and beams (125, 425) coupling different attachment points (129) of the second electrode (123, 423) to the anchor (122, 422) wherein the different attachment points (129) form a simply connected polygon and wherein a portion of the sensing area is located within the simply connected polygon.
摘要翻译： 电子部件包括支撑基板（101），覆盖支撑基板（101）的固定电极（113），覆盖支撑基板的可动电极（123,423）和第一电极（113），其中第一和第二电极 （113,123和423）形成具有感测区域的电容器，耦合到支撑衬底（101）的锚固件（122,422）和耦合第二电极的不同连接点（129）的梁（125,425） （123,423）到锚定器（122,422），其中不同的附接点（129）形成简单连接的多边形，并且其中感测区域的一部分位于简单连接的多边形内。
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公开(公告)号：US5892252A
公开(公告)日：1999-04-06
申请号：US18976
申请日：1998-02-05
IPC分类号： G01N27/414 , H01L23/58
CPC分类号： G01N27/414
摘要： A field effect transistor (10) for chemical sensing by measuring a change in a surface potential of a gate electrode (48) due to exposure to a fluid has a semiconductor substrate (12) with a trench (18,20). The trench has a first sidewall (30) and a second sidewall (32) disposed opposite the first sidewall to provide a fluid gap (50) for the fluid to be sensed. The gate electrode is disposed overlying the first sidewall of the trench, and a source region (54) and a drain region (56) are disposed in the second sidewall of the trench. A channel region (52) is disposed between the source and drain regions, and the gate electrode is disposed opposite the first channel region across the fluid gap. A heater (26) for regulating the temperature of the gate electrode is disposed in the first sidewall of the trench.
摘要翻译： 用于通过测量由于暴露于流体而导致的栅电极（48）的表面电位变化的用于化学感测的场效应晶体管（10）具有具有沟槽（18,20）的半导体衬底（12）。 沟槽具有与第一侧壁相对设置的第一侧壁（30）和第二侧壁（32），以提供待感测流体的流体间隙（50）。 栅电极设置在沟槽的第一侧壁上方，并且源区（54）和漏区（56）设置在沟槽的第二侧壁中。 沟道区域（52）设置在源极区域和漏极区域之间，并且栅极电极与穿过流体间隙的第一沟道区域相对设置。 用于调节栅电极的温度的加热器（26）设置在沟槽的第一侧壁中。
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公开(公告)号：US5747839A
公开(公告)日：1998-05-05
申请号：US720513
申请日：1996-09-30
IPC分类号： G01N27/414 , H01L23/58
CPC分类号： G01N27/414
摘要： A field effect transistor (10) for chemical sensing by measuring a change in a surface potential of a gate electrode (48) due to exposure to a fluid has a semiconductor substrate (12) with a trench (18, 20). The trench has a first sidewall (30) and a second sidewall (32) disposed opposite the first sidewall to provide a fluid gap (50) for the fluid to be sensed. The gate electrode is disposed overlying the first sidewall of the trench, and a source region (54) and a drain region (56) are disposed in the second sidewall of the trench. A channel region (52) is disposed between the source and drain regions, and the gate electrode is disposed opposite the first channel region across the fluid gap. A heater (26) for regulating the temperature of the gate electrode is disposed in the first sidewall of the trench.
摘要翻译： 用于通过测量由于暴露于流体而导致的栅电极（48）的表面电位变化的用于化学感测的场效应晶体管（10）具有具有沟槽（18,20）的半导体衬底（12）。 沟槽具有与第一侧壁相对设置的第一侧壁（30）和第二侧壁（32），以提供待感测流体的流体间隙（50）。 栅电极设置在沟槽的第一侧壁上方，并且源区（54）和漏区（56）设置在沟槽的第二侧壁中。 沟道区域（52）设置在源极区域和漏极区域之间，并且栅极电极与穿过流体间隙的第一沟道区域相对设置。 用于调节栅电极的温度的加热器（26）设置在沟槽的第一侧壁中。
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