公开(公告)号：US07425485B2

公开(公告)日：2008-09-16

申请号：US11239986

申请日：2005-09-30

申请人： Bishnu P. Gogoi

发明人： Bishnu P. Gogoi

IPC分类号： H01L21/8234

CPC分类号： H01L21/764 ,  H01L27/08 ,  H01L2924/0002 ,  H01L2924/00

摘要： A microelectronic assembly and a method for forming the same are provided. The method includes forming first and second lateral etch stop walls in a semiconductor substrate having first and second opposing surfaces. An inductor is formed on the first surface of the semiconductor substrate and a hole is formed through the second surface of the substrate to expose the substrate between the first and second lateral etch stop walls. The substrate is isotropically etched between the first and second lateral etch stop walls through the etch hole to create a cavity within the semiconductor substrate. A sealing layer is formed over the etch hole to seal the cavity.

摘要翻译： 提供微电子组件及其形成方法。 该方法包括在具有第一和第二相对表面的半导体衬底中形成第一和第二横向蚀刻停止壁。 电感器形成在半导体衬底的第一表面上，并且穿过衬底的第二表面形成孔，以暴露第一和第二侧面蚀刻停止壁之间的衬底。 通过蚀刻孔在第一和第二横向蚀刻停止壁之间各向同性地蚀刻衬底，以在半导体衬底内形成空腔。 在蚀刻孔上形成密封层以密封空腔。

公开(公告)号：US06744264B2

公开(公告)日：2004-06-01

申请号：US10133701

申请日：2002-04-25

申请人： Bishnu P. Gogoi ,  Sung Jin Jo

发明人： Bishnu P. Gogoi ,  Sung Jin Jo

IPC分类号： G01R2726

CPC分类号： G01R31/2829 ,  G01D5/2405 ,  G01D21/00

摘要： A MEMS sensor packaged with an integrated circuit includes switches and control circuitry. In a test mode, the control circuitry causes the switches to turn off and on such that the first and second capacitance of the MEMS sensor can be monitored individually. During a normal mode of operation, the switches are maintained such that the MEMS sensor packaged with the integrated circuit operates to produce a filtered and trimmed output reflecting the sensed phenomena.

摘要翻译： 与集成电路一起封装的MEMS传感器包括开关和控制电路。 在测试模式中，控制电路使开关断开和接通，使得MEMS传感器的第一和第二电容可以被单独监测。 在正常操作模式期间，保持开关，使得与集成电路封装的MEMS传感器工作，以产生反映感测到的现象的滤波和修整的输出。

公开(公告)号：US06352874B1

公开(公告)日：2002-03-05

申请号：US09317734

申请日：1999-05-24

申请人： Andrew C. McNeil ,  David J. Monk ,  Bishnu P. Gogoi

发明人： Andrew C. McNeil ,  David J. Monk ,  Bishnu P. Gogoi

IPC分类号： H01L2128

CPC分类号： G01L9/0042 ,  G01L9/0073

摘要： A method of manufacturing a sensor includes forming a first electrode (120, 1120), forming a sacrificial layer (520) over the first electrode, and forming a layer (130) over the sacrificial layer where a second electrode (131, 831) is located in the layer. The method further includes removing the sacrificial layer after forming the layer to form a cavity (140) between the first and second electrodes and then sealing the cavity between the first and second electrodes. The layer is supported over the first electrode by a post (133, 833) in the cavity, and the second electrode is movable relative to the first electrode and is movable in response to a pressure external to the cavity.

摘要翻译： 制造传感器的方法包括：形成第一电极（120,1120），在第一电极上形成牺牲层（520），以及在牺牲层上形成层（130），其中第二电极（131,831）为 位于层。 所述方法还包括在形成所述层之后去除所述牺牲层以在所述第一和第二电极之间形成空腔（140），然后在所述第一和第二电极之间密封空腔。 该层通过腔中的柱（133,833）支撑在第一电极上，并且第二电极可相对于第一电极移动，并且可响应于空腔外部的压力而移动。

公开(公告)号：US20090261446A1

公开(公告)日：2009-10-22

申请号：US12255429

申请日：2008-10-21

申请人： Bishnu P. Gogoi

发明人： Bishnu P. Gogoi

IPC分类号： H01L27/06 ,  H01L21/76 ,  H01L21/762 ,  H01L29/06

CPC分类号： H01L29/7803 ,  H01L21/2815 ,  H01L21/76208 ,  H01L21/823412 ,  H01L21/823456 ,  H01L21/823807 ,  H01L21/82385 ,  H01L21/8249 ,  H01L27/0623 ,  H01L27/0629 ,  H01L27/0922 ,  H01L29/0638 ,  H01L29/0657 ,  H01L29/0878 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/42376 ,  H01L29/456 ,  H01L29/4941 ,  H01L29/66689 ,  H01L29/66719 ,  H01L29/7802 ,  H01L29/7816

摘要： In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a method includes forming a portion of the unidirectional transistor and a portion of a bidirectional transistor in or over a semiconductor material simultaneously. Other embodiments are described and claimed.

公开(公告)号：US06426239B1

公开(公告)日：2002-07-30

申请号：US09629611

申请日：2000-07-31

申请人： Bishnu P. Gogoi ,  David J. Monk

发明人： Bishnu P. Gogoi ,  David J. Monk

IPC分类号： H01L2100

CPC分类号： G01L9/0042 ,  G01L9/0073

摘要： A semiconductor component comprises a substrate (101), a two flexible pressure sensor diaphragms (106, 303) supported by the substrate (101), and a fixed electrode (203) between the two diaphragms (106, 303). The two diaphragms (106, 303) and the fixed electrode (203) are electrodes of two differential capacitors. The substrate (101) has a hole (601) extending from one surface (107) of the substrate (101) to an opposite surface (108) of the substrate (101). The hole (601) is located underneath the two diaphragms (106, 303), and the hole (601) at the opposite surfaces (107, 108) of the substrate (101) is preferably larger than the hole (601) at an interior portion of the substrate (101).

摘要翻译： 半导体部件包括衬底（101），由衬底（101）支撑的两个柔性压力传感器膜片（106,303）和在两个膜片（106,303）之间的固定电极（203）。 两个隔膜（106,303）和固定电极（203）是两个差分电容器的电极。 基板（101）具有从基板（101）的一个表面（107）延伸到基板（101）的相对表面（108）的孔（601）。 孔（601）位于两个隔膜（106,303）的下方，并且衬底（101）的相对表面（107,108）处的孔（601）优选地大于在内部的孔（601） 基板（101）的一部分。

公开(公告)号：US08133783B2

公开(公告)日：2012-03-13

申请号：US12255424

申请日：2008-10-21

申请人： Bishnu P. Gogoi

发明人： Bishnu P. Gogoi

IPC分类号： H01L21/336 ,  H01L21/8238 ,  H01L21/8234 ,  H01L21/70

CPC分类号： H01L27/105 ,  H01L21/764 ,  H01L27/11526 ,  H01L27/11546

摘要： In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a method includes forming a portion of the unidirectional transistor and a portion of a bidirectional transistor in or over a semiconductor material simultaneously. Other embodiments are described and claimed.

摘要翻译： 在各种实施例中，公开了制造这些结构的半导体结构和方法。 在一个实施例中，一种方法包括同时在半导体材料中或其上形成单向晶体管的一部分和双向晶体管的一部分。 描述和要求保护其他实施例。

公开(公告)号：US06465320B1

公开(公告)日：2002-10-15

申请号：US09595090

申请日：2000-06-16

申请人： Andrew C. McNeil ,  Daniel Koury, Jr. ,  Bishnu P. Gogoi

发明人： Andrew C. McNeil ,  Daniel Koury, Jr. ,  Bishnu P. Gogoi

IPC分类号： H01L2120

CPC分类号： H01L22/34 ,  H01L21/31116 ,  H01L28/40

摘要： A method of manufacturing an electronic component includes forming first, second, and third capacitors (260, 270, 280) and electrically testing the first, second, and third capacitors to characterize an etch process for a sacrificial layer. Each of the first, second, and third capacitors has different amounts of first and second electrically insulative materials.

摘要翻译： 一种制造电子部件的方法包括：形成第一，第二和第三电容器（260,270,280）并电测试第一，第二和第三电容器以表征牺牲层的蚀刻工艺。 第一，第二和第三电容器中的每一个具有不同量的第一和第二电绝缘材料。

公开(公告)号：US08125044B2

公开(公告)日：2012-02-28

申请号：US12255429

申请日：2008-10-21

申请人： Bishnu P. Gogoi

发明人： Bishnu P. Gogoi

IPC分类号： H01L21/70

CPC分类号： H01L29/7803 ,  H01L21/2815 ,  H01L21/76208 ,  H01L21/823412 ,  H01L21/823456 ,  H01L21/823807 ,  H01L21/82385 ,  H01L21/8249 ,  H01L27/0623 ,  H01L27/0629 ,  H01L27/0922 ,  H01L29/0638 ,  H01L29/0657 ,  H01L29/0878 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/42376 ,  H01L29/456 ,  H01L29/4941 ,  H01L29/66689 ,  H01L29/66719 ,  H01L29/7802 ,  H01L29/7816

摘要： In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a method includes forming a portion of the unidirectional transistor and a portion of a bidirectional transistor in or over a semiconductor material simultaneously. Other embodiments are described and claimed.

摘要翻译： 在各种实施例中，公开了制造这些结构的半导体结构和方法。 在一个实施例中，一种方法包括同时在半导体材料中或其上形成单向晶体管的一部分和双向晶体管的一部分。 描述和要求保护其他实施例。

公开(公告)号：US20090261396A1

公开(公告)日：2009-10-22

申请号：US12255424

申请日：2008-10-21

申请人： Bishnu P. Gogoi

发明人： Bishnu P. Gogoi

IPC分类号： H01L27/108 ,  H01L21/8242

CPC分类号： H01L27/105 ,  H01L21/764 ,  H01L27/11526 ,  H01L27/11546

摘要： In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a method includes forming a portion of the unidirectional transistor and a portion of a bidirectional transistor in or over a semiconductor material simultaneously. Other embodiments are described and claimed.

摘要翻译： 在各种实施例中，公开了制造这些结构的半导体结构和方法。 在一个实施例中，一种方法包括同时在半导体材料中或其上形成单向晶体管的一部分和双向晶体管的一部分。 描述和要求保护其他实施例。

公开(公告)号：US07585744B2

公开(公告)日：2009-09-08

申请号：US10730230

申请日：2003-12-08

申请人： Bishnu P. Gogoi ,  Raymond M. Roop ,  Hemant D. Desai

发明人： Bishnu P. Gogoi ,  Raymond M. Roop ,  Hemant D. Desai

IPC分类号： H01L21/76

CPC分类号： B81C1/00293 ,  B81C2203/0136 ,  B81C2203/0145

摘要： In one embodiment, a reflowable layer 51 is deposited over a semiconductor device 10 and reflowed in an environment having a pressure approximately equal to that of atmosphere to form a seal layer 52. The seal layer 52 seals all openings 43 in the underlying layer of the semiconductor device 10. Since the reflow is performed at approximately atmospheric pressure a gap 50 which was coupled to the opening 43 is sealed at approximately atmospheric pressure, which is desirable for the semiconductor device 10 to avoid oscillation. The seal layer 52 is also desirable because it prevents particles from entering the gap 50. In another embodiment, the seal layer 52 is deposited in an environment having a pressure approximately equal to atmospheric pressure to seal the hole 43 without a reflow being performed.

摘要翻译： 在一个实施例中，可回流层51沉积在半导体器件10上并且在具有大致等于大气压力的压力的环境中回流以形成密封层52.密封层52将所有的开口43密封在 由于回流在近似大气压下进行，所以连接到开口43的间隙50在大气压下被密封，这对于半导体器件10来说避免振荡是期望的。 密封层52也是期望的，因为它防止颗粒进入间隙50.在另一个实施例中，密封层52沉积在具有大致等于大气压力的压力的环境中，以密封孔43而不进行回流。