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公开(公告)号：US07453084B2
公开(公告)日：2008-11-18
申请号：US11136282
申请日：2005-05-24
IPC分类号： H01L43/00
CPC分类号： H01L29/66984 , H01F10/3272 , H01F41/325 , H01L43/08 , Y10S977/935
摘要： A transistor has an emitter, a spin-selective base, a collector, a first barrier interposed between the spin-selective base and the emitter, a second barrier interposed between the spin-selective base and the collector, and a transfer ratio of more than 10−3.
摘要翻译： 晶体管具有发射极，自旋选择性基极，集电极，插入在自旋选择性基极和发射极之间的第一势垒，介于自旋选择性基极和集电极之间的第二势垒，并且转移比大于 10 -3。
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2.发明授权公开(公告)号：US08480825B1
公开(公告)日：2013-07-09
申请号：US13227807
申请日：2011-09-08
申请人： Paul E. Anderson
发明人： Paul E. Anderson
IPC分类号： D03D23/00
CPC分类号： C06B23/02
摘要： A method of in-situ remediation of chlorinated and fluorinated reaction by-products resulting from energetic detonations and/or burning of energetic mixtures comprising adding a quantity of Calcium disilicide (CaSi2), Calcium silicide (CaSi), Magnesium disilicide (MgSi2), Magnesium silicide, or Aluminum Calcium (Al2Ca) compounds to the energetic mixture prior to its detonation and/or burning. Advantageously, the in-situ production of more inert by-products results from this addition thereby preventing the formation of any less-desirable by-products.
摘要翻译： 一种由能量爆炸和/或能量混合物燃烧产生的氯化和氟化反应副产物的原位修复方法，包括加入一量二硅酸钙（CaSi 2），硅化钙（CaSi），二硅化镁（MgSi 2），镁 硅化物或铝钙（Al2Ca）化合物在其爆炸和/或燃烧之前的能量混合物。 有利的是，由此添加导致更惰性的副产物的原位生产，从而防止形成任何不理想的副产物。
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3.发明申请DAMASCENE PROCESS USING PVD SPUTTER CARBON FILM AS CMP STOP LAYER FOR FORMING A MAGNETIC RECORDING HEAD 有权使用PVD溅射碳膜作为CMP停止层形成磁记录头的吸塑工艺公开(公告)号：US20120111826A1
公开(公告)日：2012-05-10
申请号：US12943835
申请日：2010-11-10
申请人： YANFENG CHEN , Yunjun Tang , Yana Qian , Ming M. Yang , Yunfei Li , Paul E. Anderson
发明人： YANFENG CHEN , Yunjun Tang , Yana Qian , Ming M. Yang , Yunfei Li , Paul E. Anderson
IPC分类号： G11B5/127
CPC分类号： G11B5/3116 , G11B5/3163
摘要： Damascene processes using physical vapor deposition (PVD) sputter carbon film as a chemical mechanical planarization (CMP) stop layer for forming a magnetic recording head are provided. In one embodiment, one such process includes providing an insulator, removing a portion of the insulator to form a trench within the insulator, depositing a carbon material on first portions of the insulator using a physical vapor deposition process, disposing at least one ferromagnetic material on second portions of the insulator to form a pole including a portion of the ferromagnetic material within the trench, and performing a chemical mechanical planarization on the at least one ferromagnetic material using at least a portion of the carbon material as a stop for the chemical mechanical planarization.
摘要翻译： 提供使用物理气相沉积（PVD）溅射碳膜作为用于形成磁记录头的化学机械平面化（CMP）停止层的镶嵌工艺。 在一个实施例中，一种这样的方法包括提供绝缘体，去除绝缘体的一部分以在绝缘体内形成沟槽，使用物理气相沉积工艺在绝缘体的第一部分上沉积碳材料，将至少一种铁磁材料放置在 所述绝缘体的第二部分形成包括所述沟槽内的所述铁磁材料的一部分的极，以及使用所述碳材料的至少一部分作为所述化学机械平面化的停止层，对所述至少一种铁磁材料进行化学机械平坦化 。
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公开(公告)号：US08102691B2
公开(公告)日：2012-01-24
申请号：US12144705
申请日：2008-06-24
申请人： Haiwen Xi , Xiaobin Wang , Dimitar V. Dimitrov , Paul E. Anderson , Harry Liu , Song S. Xue , Andreas Roelofs , Markus Siegert
发明人： Haiwen Xi , Xiaobin Wang , Dimitar V. Dimitrov , Paul E. Anderson , Harry Liu , Song S. Xue , Andreas Roelofs , Markus Siegert
IPC分类号： G11C19/00
CPC分类号： G11C19/0808 , G11C11/14 , Y10S977/933
摘要： Magnetic shift registers in which data writing and reading is accomplished by moving the magnetic domain walls by electric current. Various embodiments of domain wall nodes or anchors that stabilize a domain wall are provided. In some embodiments, the wall anchors are elements separate from the magnetic track. In other embodiments, the wall anchors are disturbances in the physical configuration of the magnetic track. In still other embodiments, the wall anchors are disturbances in the material of the magnetic track.
摘要翻译： 磁性移位寄存器，其中通过电流移动磁畴壁来实现数据写入和读取。 提供了稳定域壁的畴壁节点或锚的各种实施例。 在一些实施例中，壁锚是与磁迹分离的元件。 在其他实施例中，壁锚是磁轨的物理构型的扰动。 在另外的其它实施例中，壁锚是磁迹材料中的干扰。
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公开(公告)号：US08043732B2
公开(公告)日：2011-10-25
申请号：US12268638
申请日：2008-11-11
申请人： Paul E. Anderson , Song S. Xue
发明人： Paul E. Anderson , Song S. Xue
CPC分类号： H01L43/08 , H01L43/12 , Y10T428/1114 , Y10T428/1143
摘要： Magnetic tunnel junction cells and methods of making magnetic tunnel junction cells that include a radially protective layer extending proximate at least the ferromagnetic free layer of the cell. The radially protective layer can be specifically chosen in thickness, deposition method, material composition, and/or extent along the cell layers to enhance the effective magnetic properties of the free layer, including the effective coercivity, effective magnetic anisotropy, effective dispersion in magnetic moment, or effective spin polarization.
摘要翻译： 磁性隧道结电池和制造磁性隧道结电池的方法，其包括在电池的至少铁磁性自由层附近延伸的径向保护层。 径向保护层可以沿着电池层的厚度，沉积方法，材料组成和/或程度具体选择，以增强自由层的有效磁性，包括有效的矫顽力，有效的磁各向异性，磁矩中的有效分散 ，或有效的自旋极化。
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公开(公告)号：US20100330800A1
公开(公告)日：2010-12-30
申请号：US12492206
申请日：2009-06-26
IPC分类号： H01L21/768 , B05D1/36 , C23C14/24 , C23C16/50 , C23C16/515 , C23C14/34 , C23C14/38
CPC分类号： H01L21/76846 , C23C14/024 , C23C14/16 , C23C14/34 , H01L21/76856 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a layer of alpha-tantalum on a substrate including the steps of depositing a layer of titanium nitride on a substrate; and depositing a layer of alpha-tantalum on the layer of titanium nitride, wherein the deposition of the alpha-tantalum is carried out at temperatures below about 300° C.
摘要翻译： 一种在衬底上形成α钽层的方法，包括以下步骤：在衬底上沉积氮化钛层; 以及在所述氮化钛层上沉积一层α-钽，其中所述α-钽的沉积在低于约300℃的温度下进行。
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公开(公告)号：US20100102406A1
公开(公告)日：2010-04-29
申请号：US12501632
申请日：2009-07-13
申请人： Haiwen Xi , Antoine Khoueir , Brian Lee , Pat Ryan , Michael Tang , Insik Jin , Paul E. Anderson
发明人： Haiwen Xi , Antoine Khoueir , Brian Lee , Pat Ryan , Michael Tang , Insik Jin , Paul E. Anderson
IPC分类号： H01L29/82
CPC分类号： G01R33/098 , B82Y25/00 , G01R33/093 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01L43/08 , Y10T428/1114 , Y10T428/1143
摘要： A magnetic stack having a free layer having a switchable magnetization orientation, a reference layer having a pinned magnetization orientation, and a barrier layer therebetween. The stack includes an annular antiferromagnetic pinning layer electrically isolated from the free layer and in physical contact with the reference layer. In some embodiments, the reference layer is larger than the free layer.
摘要翻译： 具有具有可切换磁化取向的自由层的磁性堆叠，具有钉扎磁化取向的参考层和它们之间的阻挡层。 堆叠包括与自由层电隔离并与参考层物理接触的环形反铁磁钉扎层。 在一些实施例中，参考层大于自由层。
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公开(公告)号：US09212102B1
公开(公告)日：2015-12-15
申请号：US14742011
申请日：2015-06-17
申请人： Paul E. Anderson , Hongwei Qiu , Victor Stepanov
发明人： Paul E. Anderson , Hongwei Qiu , Victor Stepanov
CPC分类号： C06B45/32 , C06B21/0091 , C06B33/08 , C06B45/18
摘要： An insensitive crystalline high explosive molding powder, usable as a booster HE. The subject insensitive crystalline high explosive molding powder being manufactured by adding the crystalline high explosive, metal or semi-metal particles and a polymer or wax based binder to a solvent to form a solution, spray drying the solution to drive off the solvent, thereby co-precipitating the HE and binder to form granules in which the crystals of HE and metal particles are uniformly distributed in the binder.
摘要翻译： 不敏感的结晶高爆炸成型粉末，可用作助剂HE。 通过将结晶高爆炸性金属或半金属颗粒和聚合物或蜡基粘合剂加入到溶剂中以形成溶液来制造主体不敏感的结晶高爆炸成型粉末，喷雾干燥溶液以驱除溶剂，由此共混 - 沉淀HE和粘合剂以形成其中HE和金属颗粒的晶体均匀分布在粘合剂中的颗粒。
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公开(公告)号：US08197953B2
公开(公告)日：2012-06-12
申请号：US13083693
申请日：2011-04-11
申请人： Haiwen Xi , Antoine Khoueir , Brian Lee , Pat Ryan , Michael Tang , Insik Jin , Paul E. Anderson
发明人： Haiwen Xi , Antoine Khoueir , Brian Lee , Pat Ryan , Michael Tang , Insik Jin , Paul E. Anderson
CPC分类号： G01R33/098 , B82Y25/00 , G01R33/093 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01L43/08 , Y10T428/1114 , Y10T428/1143
摘要： A magnetic stack having a free layer having a switchable magnetization orientation, a reference layer having a pinned magnetization orientation, and a barrier layer therebetween. The stack includes an annular antiferromagnetic pinning layer electrically isolated from the free layer and in physical contact with the reference layer. In some embodiments, the reference layer is larger than the free layer.
摘要翻译： 具有具有可切换磁化取向的自由层的磁性堆叠，具有钉扎磁化取向的参考层和它们之间的阻挡层。 堆叠包括与自由层电隔离并与参考层物理接触的环形反铁磁钉扎层。 在一些实施例中，参考层大于自由层。
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公开(公告)号：US20110180888A1
公开(公告)日：2011-07-28
申请号：US13083693
申请日：2011-04-11
申请人： Haiwen Xi , Antoine Khouier , Brian Lee , Pat Ryan , Michael Tang , Insik Jin , Paul E. Anderson
发明人： Haiwen Xi , Antoine Khouier , Brian Lee , Pat Ryan , Michael Tang , Insik Jin , Paul E. Anderson
IPC分类号： H01L29/82
CPC分类号： G01R33/098 , B82Y25/00 , G01R33/093 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01L43/08 , Y10T428/1114 , Y10T428/1143
摘要： A magnetic stack having a free layer having a switchable magnetization orientation, a reference layer having a pinned magnetization orientation, and a barrier layer therebetween. The stack includes an annular antiferromagnetic pinning layer electrically isolated from the free layer and in physical contact with the reference layer. In some embodiments, the reference layer is larger than the free layer.
摘要翻译： 具有具有可切换磁化取向的自由层的磁性堆叠，具有钉扎磁化取向的参考层和它们之间的阻挡层。 堆叠包括与自由层电绝缘并与参考层物理接触的环形反铁磁钉扎层。 在一些实施例中，参考层大于自由层。
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