摘要:
The present invention provides a positive active material including a lithium-containing compound represented by the following Chemical Formula 1 and a rechargeable lithium battery including the positive active material. LiFe1-x-zMxM′zPyO4 Chemical Formula 1
摘要:
The present invention provides a positive active material including a lithium-containing compound represented by the following Chemical Formula 1 and a rechargeable lithium battery including the positive active material. LiFe1-x-zMxM′zPyO4. Chemical Formula 1
摘要:
Provided is a positive electrode for a rechargeable lithium battery including a positive active material including a lithium phosphate compound particle and fiber-type carbon attached inside the lithium phosphate compound particle, a method of preparing the same, and a rechargeable lithium battery including the same.
摘要:
A positive active material for a rechargeable lithium battery including a compound represented by the following Chemical Formula 1: LixMyCozPO4 Chemical Formula 1 wherein 0≦x≦2, 0.98≦y≦1, 0
摘要:
A nonvolatile memory device includes a memory cell array, a row decoder circuit, a page buffer circuit, and a control logic circuit. The control logic circuit controls the row decoder circuit and the page buffer circuit to perform: (1) a pre-program of sequentially selecting a plurality of memory blocks and increasing threshold voltages of string selection transistors or ground selection transistors of the selected memory block and (2) after the pre-program is completed, a main program of sequentially selecting the plurality of memory blocks, programming string selection transistors or ground selection transistors of the selected memory block, and performing a verification by using a verification voltage.
摘要:
A method of testing a non-volatile memory device and a method of managing the non-volatile memory device are provided. The method of testing the non-volatile memory device includes calculating first and second values based on program loop frequencies corresponding to word lines of a memory area. A characteristic value of the memory area may be calculated based on the first and second values, and may be compared to a reference value to determine whether the memory area is defective.