VCSEL semiconductor devices with mode control
    8.
    发明申请
    VCSEL semiconductor devices with mode control 审中-公开
    VCSEL半导体器件具有模式控制

    公开(公告)号:US20070217472A1

    公开(公告)日:2007-09-20

    申请号:US11374676

    申请日:2006-03-14

    IPC分类号: H01S5/00

    摘要: A surface emitting laser having a substrate with top and bottom surfaces; a first stack of mirror layers of alternating indices of refraction located upon the top surface of the substrate; and active layer disposed over the first stack; a second stack of mirror layers of alternating indices of refraction disposed over the active layer and a recessed portion located centrally in the second stack extending through at least some of the second stack of mirror layers for improving the spectral width characteristic of the laser.

    摘要翻译: 一种表面发射激光器,具有具有顶表面和底表面的基底; 位于衬底顶表面上的交替折射率的第一层反射镜层; 以及设置在所述第一堆叠上的有源层; 设置在有源层上方的交替折射率的第二层反射镜层和位于第二层叠中心的凹陷部分延伸穿过第二层反射镜层中的至少一些,以改善激光器的光谱宽度特性。

    Apparatus and method for integral bypass diode in solar cells
    9.
    发明授权
    Apparatus and method for integral bypass diode in solar cells 有权
    太阳能电池中整体旁路二极管的装置和方法

    公开(公告)号:US06864414B2

    公开(公告)日:2005-03-08

    申请号:US10280593

    申请日:2002-10-24

    摘要: A solar cell having a multijunction solar cell structure with a bypass diode is disclosed. The bypass diode provides a reverse bias protection for the multijunction solar cell structure. In one embodiment, the multifunction solar cell structure includes a substrate, a bottom cell, a middle cell, a top cell, a bypass diode, a lateral conduction layer, and a shunt. The lateral conduction layer is deposited over the top cell. The bypass diode is deposited over the lateral conduction layer. One side of the shunt is connected to the substrate and another side of the shunt is connected to the lateral conduction layer. In another embodiment, the bypass diode contains an i-layer to enhance the diode performance.

    摘要翻译: 公开了具有带旁路二极管的多结太阳能电池结构的太阳能电池。 旁路二极管为多结太阳能电池结构提供反向偏置保护。 在一个实施例中,多功能太阳能电池结构包括衬底,底部电池,中间电池,顶部电池,旁路二极管,横向导电层和分流器。 横向导电层沉积在顶部电池上。 旁路二极管沉积在横向导电层上。 分流器的一侧连接到基板,并且分流器的另一侧连接到横向导电层。 在另一个实施例中,旁路二极管包含i层以增强二极管性能。